APT50M85B2VFR Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 2 of about 2 for APT50M85B2VFR | ||||
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APT50M85B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | 39.14 Kb, 2 Pages. |  |
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APT50M85B2VFR | Microsemi Corporation | Power MOS V FREDFET | 135.8 Kb, 4 Pages. | |
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| Fulltext Datasheet Results | 1 - 6 of about 6 for APT50M85B2VFR | ||||
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First line: APT50M85B2VFR APT50M85LVFR FREDFET B2VFR Abstract: .. APT50M85B2VFR APT50M85LVFR APT50M85LVFR 500V 500V 56A 0.085. Characteristic / Test Conditions. Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V .. Tags: 5914 APT50M85B2VFR APT50M85LVFR | 39.14 Kb | 2 Pages | Original | |
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First line: APT50M85B2VFR APT50M85LVFR 500V 0.085 POWER FREDFET Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout. Abstract: .. 050-5914 Rev A 5-2004. APT50M85B2VFR APT50M85LVFR APT50M85LVFR 500V 500V 56A 0.085Ω Ω Ω Ω Ω. MAXIMUM RATINGS All Ratings: TC = 25 °C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic .. Tags: 5914 APT50M85B2VFR APT50M85LVFR | 135.82 Kb | 4 Pages | Original | |
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First line: APT10026JN APT100GF60LR* APT8075BVR APT5014LVR* APT10M09LVR* ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 500 0.085 56 625 6700 250 3000 APT50M85B2VFR Aug 99. 500 0.080 58 625 6700 250 3000 APT50M80B2VFR APT50M80B2VFR Aug 99 T-MAXTM. 200 0.018 100 625 7600 220 3000 APT20M18B2VFR APT20M18B2VFR Sept 99. 100 0.009 100 625 7600 220 3000 APT10M09B2VFR APT10M09B2VFR .. Tags: APT10M09LVR* APT5014LVR* APT8075BVR APT100GF60LR* APT10026JN ARF446 ARF445 arf444* arf442* APT8030LVFR* APT8030JN APT802R4KN APT6040BN APT6011B2VFR APT6* APT50M85JVR datasheet abstract.. | 210.35 Kb | 21 Pages | Original | |
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First line: 1200 volt mosfet APT8075BVR APT100GF60LR* FREDFETs* sot-227 footprint Discrete Power Products Advanced Power Technology Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments t Abstract: .. 0.085 56 APT50M85B2VR APT50M85B2VR APT50M85B2VFR. 0.080 58 APT50M80B2VR APT50M80B2VR APT50M80B2VFR APT50M80B2VFR . 400 0.070 57 APT40M70B2VR APT40M70B2VR APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR .. Tags: FREDFETs* APT100GF60LR* APT8075BVR 1200 volt mosfet sot-227 footprint smps new smps high power isotop bipolar igbt high power IGBT D-Series APT8024jll* APT75GP120JDF3 APT6* APT50M75JLL APT5024BVFR datasheet abstract.. | 1747.86 Kb | 20 Pages | Original | |
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First line: APT10M09LVR* apt8015jvr APT8075BVR APT100GF60LR* arf450 ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 0.085 56 625 8700 3000 250 APT50M85B2VFR NEW. 0.080 58 625 8700 3000 250 APT50M80B2VFR APT50M80B2VFR NEW. 200 0.022 100* 520 8500 2500 220 APT20M22B2VFR APT20M22B2VFR . 0.018 100* 625 10,000 3000 220 APT20M18B2VFR APT20M18B2VFR NEW. 100 0.009 .. Tags: APT100GF60LR* APT8075BVR apt8015jvr APT10M09LVR* Microsemi replace arf450 ARF446 ARF445 APT8030LVFR* APT6013JVR APT6* apt50m50pvr APT5024BVFR APT5020BVR APT5020BVFR datasheet abstract.. | 249.55 Kb | 24 Pages | Original | |
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First line: APTLM50H10FRT APTGU180DA120 APT100GF60LR* induction furnace using igbt APTGU180DA120* Advanced Power Technology Technology. Beginning with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. c Abstract: .. 0.085 56 APT50M85B2VR APT50M85B2VR APT50M85B2VFR. 0.080 58 APT50M80B2VR APT50M80B2VR APT50M80B2VFR APT50M80B2VFR . 400 0.070 57 - - - APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR .. Tags: APTGU180DA120* induction furnace using igbt APT100GF60LR* APTLM50H10FRT sot-227 footprint SiC IGBT High Power Modules IGBT D-Series IGBT Designers Manual cree MOS APTM50HM75SCT APTM50AM24SC APTLGF210U120T APTGU180DA120 APTGT600U120D4 APT75GP120JDF3 datasheet abstract.. | 2210.96 Kb | 36 Pages | Original | |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
|---|---|---|---|---|---|---|
| FCH22N60N | FCH22N60N Buy | APT50M85B2VFR Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| FCH47N60N | FCH47N60N Buy | APT50M85B2VFR Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
|---|---|---|---|---|---|
| IXFX64N50P Buy | VDSS (V)=500, ID@TC=25°C(A)=64, RDS(on) max @TJ=25°C(Ohm)=0.0850 | APT50M85B2VFR Buy | Advanced Power Technology | VDSS (V)=500, ID@TC=25°C(A)=56, RDS(on) max @TJ=25°C(Ohm)=0.0850 | Close |
| IXFX66N50Q2 Buy | VDSS (V)=500, ID@TC=25°C(A)=66, RDS(on) max @TJ=25°C(Ohm)=0.0740 | APT50M85B2VFR Buy | Advanced Power Technology | VDSS (V)=500, ID@TC=25°C(A)=56, RDS(on) max @TJ=25°C(Ohm)=0.0850 | Close |
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