Datasheet Search Results			1 - 2 of about 2 for APT50M80B2VR
	APT50M80B2VR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	36.84 Kb,  2 Pages.
	APT50M80B2VR	Microsemi Corporation	Power MOS V MOSFET	91.86 Kb,  4 Pages.

Fulltext Datasheet Results		1 - 7 of about 7 for APT50M80B2VR
	First line: APT50M80B2VR APT50M80LVR Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout. T-MaxTM Abstract: .. APT50M80B2VR APT50M80LVR APT50M80LVR 500V 500V 58A 0.080Ω Ω Ω Ω Ω. Power MOS V ® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases ..  Tags: 0729  033 58a   APT50M80B2VR APT50M80LVR	91.87 Kb	4 Pages	Original
	First line: APT50M80B2VR APT50M80LVR 500V 0.080W B2VR Abstract: .. APT50M80B2VR APT50M80LVR APT50M80LVR 500V 500V 58A 0.080. Characteristic / Test Conditions. Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V Drain ..  Tags: 033 58a   APT50M80B2VR APT50M80LVR	36.84 Kb	2 Pages	Original
	First line: APT10026JN APT100GF60LR* APT8075BVR APT5014LVR* APT10M09LVR* ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 500 0.080 58 625 6700 3000 APT50M80B2VR Aug 99 T-MAXTM. 200 0.018 100 625 7600 3000 APT20M18B2VR APT20M18B2VR Sept 99. 100 0.009 100 625 7600 3000 APT10M09B2VR APT10M09B2VR Sept 99. 600 0.100 49 625 4100 3000 APT6011LVR APT6011LVR Sept 99 ..  Tags: APT10M09LVR* APT5014LVR* APT8075BVR APT100GF60LR* APT10026JN ARF446  ARF445  arf444*  arf442*  APT8030LVFR*  APT8030JN  APT802R4KN  APT6040BN  APT6011B2VFR  APT6*  APT50M85JVR   datasheet abstract..	210.35 Kb	21 Pages	Original
	First line: 1200 volt mosfet APT8075BVR APT100GF60LR* FREDFETs* sot-227 footprint Discrete Power Products Advanced Power Technology Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments t Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VFR APT50M80B2VFR . 400 0.070 57 APT40M70B2VR APT40M70B2VR APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 0.018 100 APT20M18B2VR APT20M18B2VR APT20M18B2VFR APT20M18B2VFR ..  Tags: FREDFETs* APT100GF60LR* APT8075BVR 1200 volt mosfet sot-227 footprint  smps new  smps high power  isotop bipolar  igbt high power  IGBT D-Series  APT8024jll*  APT75GP120JDF3  APT6*  APT50M75JLL  APT5024BVFR   datasheet abstract..	1747.86 Kb	20 Pages	Original
	First line: APT10M09LVR* apt8015jvr APT8075BVR APT100GF60LR* arf450 ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 0.080 58 625 8700 3000 APT50M80B2VR NEW. 200 0.022 100* 520 8500 2500 APT20M22B2VR APT20M22B2VR . 0.018 100* 625 10,000 3000 APT20M18B2VR APT20M18B2VR NEW. 100 0.011 100* 520 8600 2500 APT10M11B2VR APT10M11B2VR . 0.009 100* 625 10,000 ..  Tags: APT100GF60LR* APT8075BVR apt8015jvr APT10M09LVR* Microsemi replace  arf450  ARF446  ARF445  APT8030LVFR*  APT6013JVR  APT6*  apt50m50pvr  APT5024BVFR  APT5020BVR  APT5020BVFR   datasheet abstract..	249.55 Kb	24 Pages	Original
	First line: igbt APT75GP120JDQ3 ARF463A vrf2933* ARF521 sot-227 footprint Power Semiconductors Power Modules Power MOSFETs Power Products Group Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VFR APT50M80B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 100 0.011 100 --- APT10M11B2VFR APT10M11B2VFR . 0.009 100 --- APT10M09B2VFR APT10M09B2VFR . 600 0.080 65 APT60M80L2VR APT60M80L2VR APT60M80L2VFR APT60M80L2VFR . 500 0.060 ..  Tags: sot-227 footprint ARF521 vrf2933* ARF463A igbt APT75GP120JDQ3   datasheet abstract..	2834.19 Kb	32 Pages	Original
	First line: APTLM50H10FRT APTGU180DA120 APT100GF60LR* induction furnace using igbt APTGU180DA120* Advanced Power Technology Technology. Beginning with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. c Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VFR APT50M80B2VFR . 400 0.070 57 - - - APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 0.018 100 APT20M18B2VR APT20M18B2VR APT20M18B2VFR APT20M18B2VFR ..  Tags: APTGU180DA120* induction furnace using igbt APT100GF60LR* APTLM50H10FRT sot-227 footprint  SiC IGBT High Power Modules  IGBT D-Series  IGBT Designers Manual  cree MOS  APTM50HM75SCT  APTM50AM24SC  APTLGF210U120T  APTGU180DA120  APTGT600U120D4  APT75GP120JDF3   datasheet abstract..	2210.96 Kb	36 Pages	Original

Access Notice

Unusual activity from your IP address or subnet. Our Cross reference data is temporarily hidden from view. One of our administrators will manually check this activity.

Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive