APT50M80B2VFR Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 2 of about 2 for APT50M80B2VFR | ||||
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APT50M80B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | 33.39 Kb, 2 Pages. |  |
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APT50M80B2VFR | Microsemi Corporation | Power MOS V FREDFET | 93.33 Kb, 4 Pages. | |
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| Fulltext Datasheet Results | 1 - 7 of about 7 for APT50M80B2VFR | ||||
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First line: APT50M80B2VFR 500V 0.080W FREDFET Abstract: .. DYNAMIC CHARACTERISTICS APT50M80B2VFR. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS. Characteristic / Test Conditions. Continuous Source Current Body Diode Pulsed Source Current 1 Body .. Tags: APT50M80B2VFR | 33.39 Kb | 2 Pages | Original | |
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First line: APT50M80B2VFR(G) APT50M80B2VFR APT50M80LVFR FREDFET T-MaxTM Abstract: .. APT50M80B2VFR APT50M80LVFR APT50M80LVFR 500V 500V 58A 0.080Ω Ω Ω Ω Ω. Power MOS V ® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases .. Tags: APT50M80B2VFR(G) 0729 033 58a APT50M80B2VFR APT50M80LVFR | 93.33 Kb | 4 Pages | Original | |
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First line: ULTRAFAST SOFT RECOVERY DUAL DIODES module APT5014LVR* APT5010LVFR arf444* APT4020BN ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 500 0.080 58 625 6700 250 3000 APT50M80B2VFR Aug 99 T-MAXTM. 200 0.018 100 625 7600 220 3000 APT20M18B2VFR APT20M18B2VFR Sept 99. 100 0.009 100 625 7600 220 3000 APT10M09B2VFR APT10M09B2VFR Sept 99. 600 0.110 49 625 4100 250 3000 .. Tags: APT4020BN APT5010LVFR APT5014LVR* ULTRAFAST SOFT RECOVERY DUAL DIODES module ARF446 ARF445 arf444* arf442* APT8030LVFR* APT8030JN APT802R4KN APT6040BN APT6011B2VFR APT6* APT50M85JVR datasheet abstract.. | 210.35 Kb | 21 Pages | Original | |
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First line: APT40GP90J APT8024JLL APT20M19JVR 48 VOLT mosfet based smps APT100GF60LR* Discrete Power Products Advanced Power Technology Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segmen Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VR APT50M80B2VFR. 400 0.070 57 APT40M70B2VR APT40M70B2VR APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 0.018 100 APT20M18B2VR APT20M18B2VR APT20M18B2VFR APT20M18B2VFR .. Tags: APT100GF60LR* 48 VOLT mosfet based smps APT20M19JVR APT40GP90J sot-227 footprint smps new smps high power isotop bipolar igbt high power IGBT D-Series APT8024jll* APT75GP120JDF3 APT6* APT50M75JLL APT5024BVFR datasheet abstract.. | 1747.86 Kb | 20 Pages | Original | |
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First line: 5020bn APT6015LVR ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 0.080 58 625 8700 3000 250 APT50M80B2VFR NEW. 200 0.022 100* 520 8500 2500 220 APT20M22B2VFR APT20M22B2VFR . 0.018 100* 625 10,000 3000 220 APT20M18B2VFR APT20M18B2VFR NEW. 100 0.009 100* 625 10,000 3000 220 APT10M09B2VFR APT10M09B2VFR .. Tags: APT6015LVR 5020bn APT5014LVR* apt8015jvr APT8030LVR Microsemi replace arf450 ARF446 ARF445 APT8030LVFR* APT6013JVR APT6* apt50m50pvr APT5024BVFR APT5020BVR APT5020BVFR datasheet abstract.. | 249.55 Kb | 24 Pages | Original | |
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First line: AK 061 smps welder inverter APT35GP120JDQ2 ARF1511 sot-227 footprint Power Semiconductors Power Modules Power MOSFETs Power Products Group Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VR APT50M80B2VFR. 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 100 0.011 100 --- APT10M11B2VFR APT10M11B2VFR . 0.009 100 --- APT10M09B2VFR APT10M09B2VFR . 600 0.080 65 APT60M80L2VR APT60M80L2VR APT60M80L2VFR APT60M80L2VFR . 500 0.060 .. Tags: sot-227 footprint ARF1511 APT35GP120JDQ2 smps welder inverter AK 061 datasheet abstract.. | 2834.19 Kb | 32 Pages | Original | |
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First line: aptm50* APT20M19JVR APT65GP60L2DF2 APT10SC120K* induction furnace Advanced Power Technology Technology. Beginning with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain e Abstract: .. 0.080 58 APT50M80B2VR APT50M80B2VR APT50M80B2VFR. 400 0.070 57 - - - APT40M70B2VFR APT40M70B2VFR . 300 0.040 76 APT30M40B2VR APT30M40B2VR APT30M40B2VFR APT30M40B2VFR . 200 0.022 100 APT20M22B2VR APT20M22B2VR APT20M22B2VFR APT20M22B2VFR . 0.018 100 APT20M18B2VR APT20M18B2VR APT20M18B2VFR APT20M18B2VFR .. Tags: induction furnace APT10SC120K* APT65GP60L2DF2 APT20M19JVR aptm50* sot-227 footprint SiC IGBT High Power Modules IGBT D-Series IGBT Designers Manual cree MOS APTM50HM75SCT APTM50AM24SC APTLGF210U120T APTGU180DA120 APTGT600U120D4 APT75GP120JDF3 datasheet abstract.. | 2210.96 Kb | 36 Pages | Original | |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
|---|---|---|---|---|---|---|
| FCH22N60N | FCH22N60N Buy | APT50M80B2VFR Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| FCH47N60N | FCH47N60N Buy | APT50M80B2VFR Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
|---|---|---|---|---|---|
| IXFX64N50P Buy | VDSS (V)=500, ID@TC=25°C(A)=64, RDS(on) max @TJ=25°C(Ohm)=0.0850 | APT50M80B2VFR Buy | Advanced Power Technology | VDSS (V)=500, ID@TC=25°C(A)=58, RDS(on) max @TJ=25°C(Ohm)=0.0800 | Close |
| IXFX66N50Q2 Buy | VDSS (V)=500, ID@TC=25°C(A)=66, RDS(on) max @TJ=25°C(Ohm)=0.0740 | APT50M80B2VFR Buy | Advanced Power Technology | VDSS (V)=500, ID@TC=25°C(A)=58, RDS(on) max @TJ=25°C(Ohm)=0.0800 | Close |
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