APT50M80 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 12 of about 12 for APT50M80 | ||||
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APT50M80 | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 33.39 Kb, 2 Pages. |  |
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APT50M80B2LC | Advanced Power Technology | N-Channel enhancement mode power MOSFET | 35 Kb, 2 Pages. | |
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APT50M80B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | 33.39 Kb, 2 Pages. | |
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APT50M80B2VFR | Microsemi Corporation | Power MOS V FREDFET | 93.33 Kb, 4 Pages. | |
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APT50M80B2VR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | 36.84 Kb, 2 Pages. | |
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APT50M80B2VR | Microsemi Corporation | Power MOS V MOSFET | 91.86 Kb, 4 Pages. | |
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APT50M80JLC | Advanced Power Technology | POWER MOS IV 500V 52A 0.080 Ohm | 34.79 Kb, 2 Pages. | |
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APT50M80JLC | Advanced Power Technology | N-Channel enhancement mode power MOSFET | 35.06 Kb, 2 Pages. | |
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APT50M80LLC | Advanced Power Technology | N-Channel enhancement mode power MOSFET | 35 Kb, 2 Pages. | |
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APT50M80LVFR | Microsemi Corporation | Power MOS V FREDFET | 93.33 Kb, 4 Pages. | |
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APT50M80LVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | 36.84 Kb, 2 Pages. | |
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APT50M80LVR | Microsemi Corporation | Power MOS V MOSFET | 91.86 Kb, 4 Pages. | |
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| Fulltext Datasheet Results | 1 - 2 of about 2 for APT50M80 | ||||
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First line: APT50M80B2VR APT50M80LVR 500V 0.080W B2VR Abstract: .. DYNAMIC CHARACTERISTICS APT50M80 B2VR - LVR. Symbol. Ciss Coss Crss Qg. Qgs Qgd td on tr td off tf. Test Conditions. VGS = 0V VDS = 25V f = 1 MHz. VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25 °C VGS = 15V. VDD .. Tags: 033 58a APT50M80B2VR APT50M80LVR | 36.84 Kb | 2 Pages | Original | |
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First line: APT50M80B2LC APT50M80LLC 500V 0.080W POWER VITM Power VITM generation gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge achieved optimizing manufacturing process minimize Ciss Crss. Lower gate charge coupled with Power VITM optimized gate layout, delivers exceptio Abstract: .. DYNAMIC CHARACTERISTICS APT50M80 B2LC - LLC. Symbol. Ciss Coss Crss Qg. Qgs Qgd td on tr td off tf. Test Conditions. VGS = 0V VDS = 25V f = 1 MHz. VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25 °C VGS = 15V. VDD .. Tags: 033 58a APT50M80B2LC APT50M80LLC | 35 Kb | 2 Pages | Original | |
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