APT50M75JLLU2 F-33700 MIL-STD-750 -15A/ -240A/ E145592 - Datasheet Archive

 

APT50M75JLLU2 51A 0.075W 500V POWER MOS 7TM K S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

 

APT50M75JLLU2 APT50M75JLLU2 APT50M75JLLU2 APT50M75JLLU2 51A 0.075W 500V POWER MOS 7TM K S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. · Lower Input Capacitance · Lower Miller Capacitance SO "UL Recognized" ISOTOP® D · Increased Power Dissipation · Easier To Drive · Lower Gate Charge, Qg · PFC "Boost" Configuration MAXIMUM RATINGS Symbol VDSS ID 27 2 T- D G K G S All Ratings: TC = 25°C unless otherwise specified. APT50M75JLLU2 APT50M75JLLU2 Parameter AL IC HN EC ION T T CE MA AN OR DV NF A I 500 Drain-Source Voltage Volts 51 Continuous Drain Current @ TC = 25°C 1 UNIT Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 465 Watts Linear Derating Factor 3.72 W/°C VGSM PD TJ,TSTG 204 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 51 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 500 Volts 51 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.075 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) UNIT Ohms 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) µA ±100 Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7095 Rev - 10-2001 Symbol APT50M75JLLU2 APT50M75JLLU2 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V Output Capacitance VDS = 25V 1200 Crss Reverse Transfer Capacitance f = 1 MHz 90 Qg Total Gate Charge Qgs Gate-Source Charge UNIT 5800 Coss MAX AL IC HN EC ION T T CE MA AN OR DV NF A I 3 VGS = 10V 66 17 VDD = 0.5 VDSS 14 ID = ID[Cont.] @ 25°C 38 RG = 0.6W td(on) 38 ID = ID[Cont.] @ 25°C VGS = 15V Gate-Drain ("Miller") Charge 5 Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf 145 VDD = 0.5 VDSS Qgd pF Fall Time nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS MIN TYP Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 MAX 51 (Body Diode) 204 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 620 ns Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 14.7 µC dv/ dt Peak Diode Recovery dv/ dt 5 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RqJC Junction to Case RqJA TYP Junction to Ambient 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction °C/W 3 See MIL-STD-750 MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.92mH, R = 25W, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.01 0.02 0.005 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) q 050-7095 Rev - 10-2001 0.3 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT50M75JLLU2 APT50M75JLLU2 Diode Specifications Section MAXIMUM RATINGS (UltraFast Recovery Diode) Symbol VR All Ratings: TC = 25°C unless otherwise specified. APT50M75JLLU2 APT50M75JLLU2 UNIT 600 Characteristic / Test Conditions Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5) 30 RMS Forward Current 60 IF(RMS) IFSM TJ,TSTG TL AL IC HN EC ION T T CE MA AN OR DV NF A I Amps 320 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS) -55 to 150 Operating and StorageTemperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN TYP IF = 30A VF Maximum Forward Voltage IF = 60A MAX 1.8 1.5 Volts IF = 30A, TJ = 150°C IRM CT Junction Capacitance, VR = 200V 1.6 VR = VR Rated 250 VR = VR Rated, TJ = 125°C Maximum Reverse Leakage Current UNIT 500 µA 40 pF 050-7095 Rev - 10-2001 Symbol APT50M75JLLU2 APT50M75JLLU2 DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX 65 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/ -15A/µS, VR = 30V, TJ = 25°C 50 trr2 Reverse Recovery Time TJ = 25°C 50 trr3 IF = 30A, diF /dt = -240A/ -240A/µS, VR = 350V TJ = 100°C 80 tfr1 Forward Recovery Time TJ = 25°C 155 tfr2 IF = 30A, diF /dt = 240A/µS, VR = 350V TJ = 100°C 155 IRRM1 Reverse Recovery Current TJ = 25°C 4 10 IRRM2 IF = 30A, diF /dt = -240A/ -240A/µS, VR = 350V TJ = 100°C 7.5 15 Qrr1 Recovery Charge TJ = 25°C 100 Qrr2 IF = 30A, diF /dt = -240A/ -240A/µS, VR = 350V TJ = 100°C 300 Vfr1 Forward Recovery Voltage TJ = 25°C 5 Vfr2 IF = 30A, diF /dt = 240A/µS, VR = 350V TJ = 100°C 5 Rate of Fall of Recovery Current TJ = 25°C 400 IF = 30A, diF /dt = -240A/ -240A/µS, VR = 350V (See Figure 10) TJ = 100°C UNIT 200 diM/dt AL IC HN EC ION T T CE MA AN OR DV NF A I nS Amps nC Volts A/µS THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RqJC TYP Junction-to-Case Thermal Resistance RqJA MIN Junction-to-Ambient Thermal Resistance WT MAX UNIT 0.90 °C/W 20 1.06 oz. 30 gm. Package Weight 2.0 D=0.5 0.5 0.2 0.1 0.1 0.05 0.05 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) q 050-7095 Rev - 10-2001 1.0 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.01 0.005 -5 10 t1 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 APT50M75JLLU2 APT50M75JLLU2 1600 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 80 TJ = 150°C 60 TJ = 100°C 40 TJ = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 15, Forward Voltage Drop vs Forward Current 60A 800 30A 400 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate 2.0 TJ = 100°C VR = 350V 60A 30 20 30A 10 15A 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 17, Reverse Recovery Current vs Current Slew Rate 1.6 Qrr trr 1.2 trr IRRM 0.8 Qrr 0.4 0.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 18, Dynamic Parameters vs Junction Temperature 200 -50 2500 tfr, FORWARD RECOVERY TIME (nano-SECONDS) TJ = 100°C VR = 350V trr, REVERSE RECOVERY TIME (nano-SECONDS) 15A 0 Kf, DYNAMIC PARAMETERS (NORMALIZED) IRRM, REVERSE RECOVERY CURRENT (AMPERES) 40 1200 AL IC HN EC ION T T CE MA AN OR DV NF A I TJ = -55°C 20 TJ = 100°C VR = 350V 160 60A 120 30A 15A 80 40 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 19, Reverse Recovery Time vs Current Slew Rate 25 TJ = 100°C VR = 350V IF = 30A 2000 20 Vfr 1500 15 1000 10 500 5 tfr Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) IF, FORWARD CURRENT (AMPERES) 100 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate 800 100 50 30 0.01 0.05 0.1 Figure 21, Junction Capacitance vs Reverse Voltage 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) 10 50 100 200 050-7095 Rev - 10-2001 CJ, JUNCTION CAPACITANCE (pico-FARADS) 500 APT50M75JLLU2 APT50M75JLLU2 Vr D.U.T. trr/Qrr Waveform 30µH PEARSON 411 CURRENT TRANSFORMER +15v diF /dt Adjust 0v -15v AL IC HN EC ION E T AT NC RM VA FO AD IN Figure 22, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF 1 4 6 Zero 5 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 23, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Cathode Drain 050-7095 Rev - 10-2001 30.1 (1.185) 30.3 (1.193) Changed 2/10/99 38.0 (1.496) 38.2 (1.504) Gate Source Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 E145592 ISOTOP® is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058