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APT43GA90BD30 Microsemi Corporation Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
APT43GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : APT43GA90BD30 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 500 Best Price : $4.76 Price Each : $4.88
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APT43GA90B Datasheet

Part Manufacturer Description PDF Type
APT43GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original
APT43GA90BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original

APT43GA90B

Catalog Datasheet MFG & Type PDF Document Tags

APT43GA90B

Abstract: MIC4452 contained herein. Typical Performance Curves APT43GA90B_S 300 40 GE = 15V 25 20 TJ= 125 , Typical Performance Curves APT43GA90B_S 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON , 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT43GA90B_S , TC 1 052-6333 Rev B 6 - 2009 ZJC, THERMAL IMPEDANCE (°C/W) 0.40 APT43GA90B_S 10 , APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT
Microsemi
Original
MIC4452 APT30DQ120

diode schottky 600v

Abstract: phase shift resistance welding contained herein. Typical Performance Curves APT43GA90B_S 300 40 GE = 15V 25 20 TJ= 125 , Typical Performance Curves APT43GA90B_S 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON , 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT43GA90B_S , , TRANSIENT THERMAL IMPEDANCE MODEL APT43GA90B_S 10% Gate Voltage 90% td(on) TJ = 125 , APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT
Microsemi
Original
diode schottky 600v phase shift resistance welding

APT43GA90B

Abstract: APT43GA90S (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT43GA90B_S , APT43GA90B_S 300 40 GE = 15V 25 20 TJ= 125°C TJ= 150°C 15 TJ= 25°C 10 5 150 100 , °C IC, COLLECTOR CURRENT (A) V 35 Typical Performance Curves APT43GA90B_S 200 td(OFF , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT43GA90B_S 10000 , 052-6333 Rev C 7 - 2009 ZJC, THERMAL IMPEDANCE (°C/W) 0.40 APT43GA90B_S 10% Gate Voltage
Microsemi
Original
APT43GA90S 117 IC 100-C43
Abstract: = 25A RG = 4.73 TJ = +125°C 129 12 16 82 57 875 425 12 16 117 129 1660 1000 APT43GA90B_S Min Typ , . 052-6333 Rev D 5 - 2011 Typical Performance Curves 250 300 V GE APT43GA90B_S TJ= 150°C TJ= 25 , DELAY TIME (ns) 200 APT43GA90B_S 14 VGE = 15V 12 150 10 100 VGE =15V,TJ=125°C 8 , ) 200 100 APT43GA90B_S 1000 10 Coes 100 1 Cres 10 0 200 400 600 800 VCE , , Junction-To-Case vs Pulse Duration 1 052-6333 Rev D 5 - 2011 APT43GA90B_S 10% Gate Voltage td(on) 90 Microsemi
Original
Abstract: Switching Safe Operating Area Turn-On Delay Time APT43GA90B_S TJ = 25° unless otherwise specifi ed , , the specifications and information contained herein. Typical Performance Curves APT43GA90B_S , CURRENT (A) GE = 15V IC, COLLECTOR CURRENT (A) V Typical Performance Curves APT43GA90B_S , Temperature Typical Performance Curves APT43GA90B_S 200 10000 1000 Coes 100 Cres 10 0 , , THERMAL IMPEDANCE (°C/W) 0.40 APT43GA90B_S 10% Gate Voltage TJ = 125°C 90% td(on Microsemi
Original

APT43GA90B

Abstract: APT43GA90BD30 APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through , high frequency. ® FEATURES APT43GA90B G C E Combi (IGBT and Diode) TYPICAL , ) tf Switching Safe Operating Area Turn-On Delay Time APT43GA90BD30 TJ = 25°C unless , specifications and information contained herein. Typical Performance Curves APT43GA90BD30 300 40 V , ) IC, COLLECTOR CURRENT (A) 35 Typical Performance Curves APT43GA90BD30 200 td(OFF
Microsemi
Original
RECTIFIER DIODE 1000A schottky

RECTIFIER DIODE 1000A schottky

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through , high frequency. ® FEATURES APT43GA90B G C E Combi (IGBT and Diode) TYPICAL , ) tf Switching Safe Operating Area Turn-On Delay Time APT43GA90BD30 TJ = 25°C unless , specifications and information contained herein. Typical Performance Curves APT43GA90BD30 300 40 V , ) IC, COLLECTOR CURRENT (A) 35 Typical Performance Curves APT43GA90BD30 200 td(OFF
Microsemi
Original
Fast Recovery Bridge Rectifier, 60A, 600V

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40
Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 -247 or D3 TO-247 or D3 T-MAX® or TO-264 8 10 13 19 23 APT27GA90K APT35GA90B APT43GA90B , ISOTOP® TO-264 TO-264 8 10 13 21 19 23 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30
Microsemi
Original
SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A 10F-A

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO , -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3
Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter smps 500w half bridge DRF1300 1000w inverter MOSFET 3000w inverter mosfet circuit

VRF2933FL

Abstract: VRF164FL (off) tf Switching Safe Operating Area APT43GA90BD_SD30 TJ = 25° unless otherwise speciï , APT43GA90BD_SD30 300 250 GE = 15V 15V TJ= 125°C TJ= 55°C 200 IC, COLLECTOR CURRENT (A , Rev D 7 - 2011 IC, COLLECTOR CURRENT (A) V Typical Performance Curves APT43GA90BD_SD30 , Temperature Typical Performance Curves APT43GA90BD_SD30 10000 200 1000 Coes 100 Cres 10 , , THERMAL IMPEDANCE (°C/W) 0.40 APT43GA90BD_SD30 10% Gate Voltage td(on) TJ = 125Â
Microsemi
Original
VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 DRF1301 MS5-001-14

LE79Q2281

Abstract: SG137 ) tr td(off) tf Switching Safe Operating Area Turn-On Delay Time APT43GA90BD_SD30 TJ = 25 , specifications and information contained herein. Typical Performance Curves APT43GA90BD_SD30 300 250 , Typical Performance Curves APT43GA90BD_SD30 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON , APT43GA90BD_SD30 10000 200 1000 Coes 100 Cres 10 0 200 400 600 800 VCE , APT43GA90BD_SD30 10% Gate Voltage 90% td(on) TJ = 125°C APT30DQ120 tr IC V CC V CE 5
Microsemi
Original
LE79Q2281 SG137 1N6761-1 IC ZL70572 2N2907AUB STK 084 power amplifier

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A APT43GA90BD_SD30 Min Typ 2465 227 34 116 18 44 nC pF Parameter Input Capacitance Output Capacitance Reverse , Typical Performance Curves 250 V GE APT43GA90BD_SD30 300 TJ= 125°C TJ= 25°C TJ= 150°C IC, COLLECTOR , APT43GA90BD_SD30 14 VGE = 15V 12 150 10 100 VGE =15V,TJ=125°C 8 VCE = 600V TJ = 25°C, or 125 , ) 200 100 APT43GA90BD_SD30 1000 10 Coes 100 1 Cres 10 0 200 400 600 800 VCE , , Junction-To-Case vs Pulse Duration 1 052-6345 Rev D 7 - 2011 APT43GA90BD_SD30 10% Gate Voltage td(on
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38