APT40GP60B2D1 F-33700 MIL-STD-750 40GP60B2D1

600V 39A POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through

APT40GP60B2D1 APT40GP60B2D1 600V 39A POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. · Low Conduction Loss · 200 kHz operation @ 400V, 29A · Ultrafast Tail Current shutoff C · 100 kHz operation @ 400V, 44A · Low Gate Charge T-MaxTM · SSOA rated MAXIMUM RATINGS Symbol G C G E E All Ratings: TC = 25°C unless otherwise specified. Parameter APT40GP60B2D1 APT40GP60B2D1 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 I C1 Continuous Collector Current @ TC = 25°C 100 I C2 Continuous Collector Current @ TC = 110°C 62 I CM Pulsed Collector Current UNIT VGEM SSOA PD TJ,TSTG TL 1 Volts Amps 160 @ TC = 25°C 160A @ 600V Switching Safe Operating Area @ TJ = 150°C 540 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 400µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 2.6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 2.4 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2 400 2 Gate-Emitter Leakage Current (VGE = ±20V) UNIT Volts µA 3000 ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Rev - 6-2002 Characteristic / Test Conditions 050-7404 Symbol APT40GP60B2D1 APT40GP60B2D1 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions VGE = 0V, VCE = 25V Cres Gate Charge VGE = 15V 6.8 123 28 I C = 40A 33 Gate-to-Emitter Plateau Voltage Qge Qgc SSOA 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA UNIT 25 Reverse Transfer Capacitance VGEP f = 1 MHz Output Capacitance 406 VCE = 300V Coes MAX 4470 Input Capacitance Total Gate Charge TYP Capacitance Cies Qg MIN TJ = 150°C, R G = 5, VGE = pF V nC 160 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Inductive Switching (25°C) VCC(Peak) = 400V 56 I C = 40A Current Rise Time 18 VGE = 15V Turn-on Delay Time 42 Turn-off Delay Time Current Fall Time R G = 5 4 Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time tr td(off) tf Eon1 Eon2 Eoff 295 18 VGE = 15V 74 I C = 40A 71 Turn-off Delay Time Current Fall Time Turn-off Switching Energy mJ 613 Inductive Switching (125°C) VCC(Peak) = 400V 24 R G = 5 4 Turn-on Switching Energy (Diode) ns 385 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy 25 357 TJ = +125°C 5 ns 815 6 mJ 519 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .23 RJC Junction to Case (DIODE) 2.0 Package Weight 5.9 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy. (See Figures 21, 23.) 050-7404 Rev - 6-2002 APT Reserves the right to change, without notice, the specifications and information contained herein. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 TYPICAL PERFORMANCE CURVES APT40GP60B2D1 APT40GP60B2D1 100 100 90 80 70 60 50 40 TC=125°C 30 20 TC=25°C 70 60 50 40 30 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 160 120 100 80 60 40 TJ = 125°C 20 TJ = 25°C 0 3.5 TJ = 25°C. 250µs PULSE TEST