APT35GN120L2DQ2 APT35GN120L2DQ2G MIL-STD-750 JESD24-1 MIC4452 00661F APT40DQ120

1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish.

APT35GN120L2DQ2 APT35GN120L2DQ2(G) 1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2 APT35GN120L2DQ2G APT35GN120L2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. TO-264 Max G C · 1200V NPT Field Stop · · · · Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT35GN120L2DQ2 APT35GN120L2DQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 94 I C2 Continuous Collector Current @ TC = 110°C 46 UNIT I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 Volts Amps 105 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 105A @ 1200V Total Power Dissipation 379 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage VCE(ON) I CES 5 1.7 2.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) 200 2 Intergrated Gate Resistor 600 6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) RGINT 6.5 1.4 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) I GES 5.8 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) MAX nA 10-2005 VGE(TH) TYP Rev B V(BR)CES MIN 050-7604 Symbol APT35GN120L2DQ2 APT35GN120L2DQ2(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage MIN Capacitance VGE = 0V, VCE = 25V 9.5 VGE = 15V 220 Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 35A SSOA Switching Safe Operating Area TJ = 150°C, R G = 2.2 7, VGE = VCE = 600V 15V, L = 100µH,VCE = 1200V VCC = 960V, VGE = 15V, Short Circuit Safe Operating Area TJ = 125°C, R G = 2.2 7 td(on) tr td(off) tf Eon1 Eon2 Turn-off Switching Energy td(off) tf 55 TBD 2315 Inductive Switching (125°C) 24 VCC = 800V 22 VGE = 15V 100 TBD I C = 35A Current Fall Time 44 Turn-on Switching Energy (Diode) 55 ns 365 RG = 2.2 7 Turn-off Delay Time Turn-on Switching Energy µJ 2395 6 Eon2 ns 300 TJ = +25°C 5 Current Rise Time Turn-off Switching Energy µs RG = 2.2 7 4 Eon1 Eoff 10 I C = 35A Turn-on Delay Time tr A 22 Current Fall Time td(on) 105 VGE = 15V Turn-on Switching Energy (Diode) nC 130 VCC = 800V Turn-off Delay Time Eoff V 24 Current Rise Time Turn-on Switching Energy pF 15 Inductive Switching (25°C) Turn-on Delay Time UNIT 120 Gate Charge 3 150 f = 1 MHz MAX 2500 Qg SCSOA TYP TJ = +125°C 3745 66 µJ 3435 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .33 RJC Junction to Case (DIODE) .61 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 050-7604 Rev B 10-2005 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1 JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452 MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2(G) 120 120 15V 60 10V 40 9V 20 8V 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 80 TJ = 125°C 60 TJ = 25°C TJ = -55°C 40 20 0 0 10V 40 9V 20 8V 7V 0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250µs PULSE TEST