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APT35GA90BD15 Microsemi Corporation Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN visit Digikey Buy
APT35GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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APT35GA90B Datasheet

Part Manufacturer Description PDF Type
APT35GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original
APT35GA90BD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original

APT35GA90B

Catalog Datasheet MFG & Type PDF Document Tags

IGBT microsemi

Abstract: power PFC APT35GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT35GA90B G C E Single die IGBT TYPICAL APPLICATIONS , SSOA td(on) tr td(off) tf APT35GA90B TJ = 25°C unless otherwise specified Min Typ
Microsemi
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MIC4452 IGBT microsemi power PFC max1934 JESD24-1

APT35GA90B

Abstract: APT35GA90S - Collector Charge Switching Safe Operating Area Turn-On Delay Time APT35GA90B_S TJ = 25°C unless , (A) GE APT35GA90B_S 250 0 20 5 40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge , (ns) 15 APT35GA90B_S 200 13 12 11 160 VGE =15V,TJ=125°C 120 80 40 0 5 , Typical Performance Curves APT35GA90B_S 10,000 200 100 1,000 100 Coes Cres 10 1 , , THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90B_S 10% Gate Voltage TJ = 125°C td(on) 90
Microsemi
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APT35GA90S
Abstract: Eon2 td(off) APT35GA90B_S TJ = 25° unless otherwise specifi ed C 144 IC = 18A RG = , APT35GA90B_S 250 60 V 15V = 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC , ) 15 APT35GA90B_S 200 13 12 11 160 VGE =15V,TJ=125°C 120 80 40 0 5 10 , Losses vs Junction Temperature Typical Performance Curves APT35GA90B_S 200 10,000 100 1 , Duration 1 052-6332 Rev D 5 - 2011 Z JC, THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90B_S 10 Microsemi
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Abstract: 14 154 144 1044 907 APT35GA90B_S Min Typ 1934 173 28 84 14 34 A nC pF Parameter Input , Rev D 5 - 2011 Typical Performance Curves 60 V GE APT35GA90B_S 250 15V 13V IC, COLLECTOR , TIME (ns) VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H APT35GA90B_S 200 14 160 VGE =15V , IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT35GA90B_S 10 100 Coes Cres 1 , - 2011 APT35GA90B_S 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125°C APT30DQ120 Microsemi
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smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter -247 or D3 TO-247 or D3 T-MAX® or TO-264 8 10 13 19 23 APT27GA90K APT35GA90B APT43GA90B , ISOTOP® TO-264 TO-264 8 10 13 21 19 23 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40
Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO , -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3
Microsemi
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N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG

VRF2933FL

Abstract: VRF164FL APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 173 f = , APT35GA90BD15 250 Typical Performance Curves 200 VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H 14 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD15
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 MS5-001-14

LE79Q2281

Abstract: PLAD15KP Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT35GA90BD_SD15 TJ = 25°C unless otherwise , , COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) GE APT35GA90BD_SD15 250 Typical Performance , (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD_SD15 13 12 11 160 VGE =15V , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT35GA90BD_SD15 200 , TC 1 052-6344 Rev D 7 - 2009 ZJC, THERMAL IMPEDANCE (°C/W) 0.50 APT35GA90BD_SD15
Microsemi
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LE79Q2281 IC ZL70572 STK 084 power amplifier transistor SI 6822 LED Driver aplications GC4600

full wave BRIDGE RECTIFIER 1044

Abstract: APT35GA90BD15 APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 173 f = , APT35GA90BD15 250 Typical Performance Curves 200 VCE = 600V TJ = 25°C, or 125°C RG = 10 L = 100H 14 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 APT35GA90BD15
Microsemi
Original
full wave BRIDGE RECTIFIER 1044

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +125°C 105 APT35GA90BD_SD15 Min , Rev E 5 - 2011 Typical Performance Curves 60 V GE APT35GA90BD_SD15 250 15V 13V IC , °C RG = 10 L = 100H APT35GA90BD_SD15 200 td(OFF), TURN-OFF DELAY TIME (ns) 14 160 VGE =15V,TJ , IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT35GA90BD_SD15 10 100 Coes 10 Cres 1 , 052-6344 Rev E 5 - 2011 APT35GA90BD_SD15 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38

full wave BRIDGE RECTIFIER 1044

Abstract: APT35GA90BD15 ) APT35GA90BD_SD15 TJ = 25° unless otherwise specifi ed C 144 IC = 18A RG = 10 ns 1044 4 μJ , APT35GA90BD_SD15 250 60 V 15V = 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC , (ns) td(ON), TURN-ON DELAY TIME (ns) APT35GA90BD_SD15 13 12 11 160 VGE =15V,TJ , APT35GA90BD_SD15 200 10,000 100 1,000 100 Coes 10 Cres 1 IC, COLLECTOR CURRENT (A) C , (°C/W) 0.50 APT35GA90BD_SD15 10% Gate Voltage TJ = 125°C td(on) 90% APT30DQ120
Microsemi
Original
APT35GA90SD15 SD15 DIODE RECTIFIER BRIDGE SINGLE 200A

full wave BRIDGE RECTIFIER 1044

Abstract: APT35GA90BD15 APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT35GA90BD15 TJ = 25°C unless otherwise specified Typ 145 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT35GA90BD15 IF(RMS , T = 125°C J V = 667V 30A 40 0 APT35GA90BD15 70 60 50 40 30 20 10 0 1 10
Microsemi
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