APT34F60B APT34F60S 03E-8/VDS 80E-8/VDS 89E-11 MIC4452

APT34F60S 600V, 34A, 0.21 Max, trr 250ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode

APT34F60B APT34F60B APT34F60S APT34F60S 600V, 34A, 0.21 Max, trr 250ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT34F60B APT34F60B APT34F60S APT34F60S Single die FREDFET D G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI · ZVS phase shifted and other full bridge · Low trr for high reliability · Half bridge · Ultra low Crss for improved noise immunity · PFC and other boost converter · Low gate charge · Buck converter · Avalanche energy rated · Single and two switch forward · RoHS compliant · Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 34 Continuous Drain Current @ TC = 100°C 21 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 930 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 17 A 1 124 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 624 RJC Junction to Case Thermal Resistance 0.20 RCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Package Weight -55 150 Soldering Temperature for 10 Seconds (1.6mm from case) WT 0.15 Torque 300 °C/W °C 0.22 6.2 Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com oz g 10 in·lbf 1.1 N·m 6-2007 Typ Rev A Min Characteristic 050-8074 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA APT34F60B APT34F60B_S 600 VBR(DSS)/TJ Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) VGS = 10V, ID = 17A Gate-Source Threshold Voltage VGS(th)/TJ 3 VGS = VDS, ID = 1mA Threshold Voltage Temperature Coefficient IDSS VDS = 600V Symbol Ciss Min Test Conditions VDS = 50V, ID = 17A Input Capacitance Reverse Transfer Capacitance Coss 100 500 ±100 Output Capacitance f = 1MHz 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Qg Total Gate Charge Gate-Source Charge Qgd Max nA Unit S pF 325 td(on) Turn-On Delay Time 170 Gate-Drain Charge tf µA VGS = 0V, VDS = 0V to 400V Qgs td(off) Typ 32 6640 70 610 VGS = 0V, VDS = 25V Co(cr) tr Unit V V/°C V mV/°C TJ = 25°C unless otherwise specified Forward Transconductance Crss 0.21 5 VGS = ±30V Parameter gfs 0.57 0.17 4 -10 TJ = 125°C Gate-Source Leakage Current Dynamic Characteristics Max TJ = 25°C VGS = 0V Zero Gate Voltage Drain Current IGSS 3 Typ Current Rise Time Turn-Off Delay Time 165 36 70 37 43 115 34 VGS = 0 to 10V, ID = 17A, VDS = 300V Resistive Switching VDD = 400V, ID = 17A RG = 4.7 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max A 124 S 1.0 250 525 TJ = 25°C TJ = 125°C ISD = 17A 3 TJ = 25°C diSD/dt = 100A/µs Unit 34 G ISD = 17A, TJ = 25°C, VGS = 0V Reverse Recovery Time Qrr Test Conditions TJ = 125°C TJ = 25°C TJ = 125°C ISD 17A, di/dt 1000A/µs, VDD = 400V, TJ = 125°C 10 25 9 12 V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 6.44mH, RG = 4.7, IAS = 17A. 050-8074 Rev A 6-2007 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS 03E-8/VDS^2 + 2.80E-8/VDS 80E-8/VDS + 9.89E-11 89E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452 MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 120 V GS = 10V J TJ = 25°C 60 40 40 6V 30 20 5.5V 10 TJ = 150°C 5V TJ = 125°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 120 NORMALIZED TO VGS = 10V @ 17A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @