NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| APT30GP60BD1 | Advanced Power Technology | IGBT, Power IGBT, VCE 600 V, IC 100 A |
7 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: APT30GP60BD1 600V POWER MOS 7 IGBT ® A new generation of high voltage power IGBTs. Using , E G E All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GP60BD1 VCES , Characteristic / Test Conditions APT30GP60BD1 DYNAMIC CHARACTERISTICS Symbol Characteristic Test , PREFORMANCE CURVES APT30GP60BD1 50 50 VGE = 15V. 250us PULSE TEST , APT30GP60BD1 80 20 VGE= 10V 15 VGE= 15V 10 VCE = 400V TJ = 25°C, TJ =125°C RG = 5 L = 100 ... | Original |
7 pages, |
T0-247 APT30GP60BD1 30A 600V Ultrafast Diode APT TO-247 APT30GP60BD1 abstract |
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| Abstract: APT15GP60BD1 APT15GP60BD1 APT30GP60BD1 TO-247 TO-247 TO-247 1200 3.9 3.9 3.9 2.7 2.7 36 46 54 62 72 ... | Original |
2 pages, |
MIL-PRF19500 APT40GP60B2D1 APT35GP120B2D2 APT15GP60K APT13GP120K APT13GP120B 125OC 600 volt mosfet datasheet abstract |
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| Abstract: APT30GP60B APT30GP60B 600V POWER MOS 7 IGBT ® A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. · Low Conduction Loss C C E G · 200 kHz operation @ 400V, 26A · Ult ... | Original |
6 pages, |
tl 7400 T0-247 APT30GP60B 7400 IC APT30GP60B abstract |
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