NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| APT28GA60K | Microsemi Corporation | Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-220 [K]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 28; |
6 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. , frequency. ® FEATURES TO-220 APT28GA60K Single die IGBT TYPICAL APPLICATIONS · Fast , (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT28GA60K , Typical Performance Curves APT28GA60K 250 IC, COLLECTOR CURRENT (A) GE 200 = 15V 15V , 0 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 Typical Performance Curves APT28GA60K ... | Original |
6 pages, |
MIC4452 APT28GA60K APT28GA60K abstract |
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| Abstract: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. , frequency. ® FEATURES TO-220 APT28GA60K Single die IGBT TYPICAL APPLICATIONS · Fast , (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT28GA60K , Typical Performance Curves APT28GA60K 250 IC, COLLECTOR CURRENT (A) GE 200 = 15V 15V , 0 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 Typical Performance Curves APT28GA60K ... | Original |
6 pages, |
MIC4452 APT28GA60K APT28GA60K abstract |
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| Abstract: 48 35 40 25 kHz 14 17 21 33 29 34 80 kHz APT28GA60K APT36GA60B APT36GA60B APT44GA60B APT44GA60B ... | Original |
36 pages, |
sot-227 footprint Full bridge SMPS 3000w smps ARF476FL smps 2000W ARF1500 SP6-P ARF463AG 1000w inverter MOSFET APT30GT60BRG VRF2933 1000W solar inverter DRF1400 1000W solar power inverter datasheet abstract |
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| Abstract: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi's High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic contamination. These and other defects lead to early life failures, and screening for them is particularly important in large die devices. The stress tests that constitute Microsemi's high-reliabil ... | Original |
45 pages, |
power 3000w PFC 3000w smps 450 watt smps Design 5kw smps full bridge S.M.P.S DIODE TVS 170v Fast Recovery Rectifiers mx gp 043 igbt 600v, dual INFINEON TVS diode process Microsemi Catalog 110v smps circuits 1500w tvs diode SMD DO215AA datasheet abstract |
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| Abstract: HS1838 APT35DL120HJ Recommended Maximum IC 50 kHz 80 kHz 14 17 20 23 27 31 39 19 21 26 30 35 40 51 Part Number APT28GA60K ... | Original |
40 pages, |
APT140N65JC6 APT100S20B 500w half bridge smps 2000w pfc igbt DRF1400 FAST RECOVERY DIODE dual 20a 600 to247 SP6-P SMPS 1000w IGBT REFERENCE DESIGN silicon carbide JFET SiC JFET 1000w Induction motor inverter MOSFET resonant converter for welding push pull converter 1000W output datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| HGTP20N60A4 | HGTP20N60A4 Buy | APT28GA60K Buy | Microsemi Corporation | Close | IGBT Discrete | 600V, SMPS Series N-Channel IGBTs |