APT15GP90B APT15GP90BG MIL-STD-750 JESD24-1 APT15DQ100 - Datasheet Archive

 

900V TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90BG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7

 

APT15GP90B APT15GP90B(G) 900V TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B APT15GP90BG APT15GP90BG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. · Low Conduction Loss G C · SSOA Rated E · Low Gate Charge C · Ultrafast Tail Current shutoff G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GP90B APT15GP90B(G) VCES Collector-Emitter Voltage 900 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 43 I C2 Continuous Collector Current @ TC = 110°C 21 UNIT I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 Volts Amps 60 Switching Safe Operating Area @ TJ = 150°C 60A @ 900V Total Power Dissipation 250 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) 900 VGE(TH) Gate Threshold Voltage 6 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 3.2 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 2.7 Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts µA nA 2-2006 I GES 4.5 (VCE = VGE, I C = 1mA, Tj = 25°C) Units Rev D I CES MAX 050-7470 VCE(ON) TYP APT15GP90B APT15GP90B(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage VGE = 15V Qge Gate-Emitter Charge Qgc Switching Safe Operating Area 60 Gate-Collector ("Miller ") Charge SSOA 7.5 tr tf Eon1 VCE = 450V Turn-off Delay Time 55 RG = 4.3 4 TBD TJ = +25°C 5 200 Inductive Switching (125°C) 9 VCC = 600V Current Rise Time 14 VGE = 15V 100 TBD I C = 15A Current Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 ns 70 RG = 4.3 Turn-off Delay Time µJ 430 6 Turn-on Delay Time ns 33 I C = 15A Current Fall Time Turn-off Switching Energy tf 14 VGE = 15V Eoff td(off) A 9 Current Rise Time Turn-on Switching Energy nC 60 VCC = 600V Turn-on Switching Energy (Diode) tr 15V, L = 100µH,VCE = 900V V 27 Inductive Switching (25°C) Eon2 td(on) TJ = 150°C, R G = 4.3, VGE = pF 10 I C = 15A Turn-on Delay Time UNIT 32 Gate Charge 3 120 f = 1 MHz MAX 1100 VGE = 0V, VCE = 25V Total Gate Charge td(off) TYP Capacitance Qg td(on) MIN TJ = +125°C µJ 790 6 500 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .50 RJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 MIL-STD-750 Method 3471. 050-7470 Rev D 2-2006 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1 JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V GE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 TJ = 25°C 40 30 TJ = 125°C 20 10 0 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 0 0 30 TJ = 25°C 20 TJ = 125°C 10 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST