APT15GP60BDQ1 MIL-STD-750 JESD24-1 APT15DF60 -100A/ -200A/ -1000A/ APT6017LLL

APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT ® TO-247 ® The POWER MOS 7 IGBT is a new generation of

APT15GP60BDQ1 APT15GP60BDQ1 APT15GP60BDQ1 APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT ® TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. · Low Conduction Loss · 100 kHz operation @ 400V, 19A · Low Gate Charge C E · 200 kHz operation @ 400V, 12A · Ultrafast Tail Current shutoff G · SSOA rated C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GP60BDQ1 APT15GP60BDQ1 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 56 IC2 Continuous Collector Current @ TC = 110°C 27 ICM Pulsed Collector Current UNIT SSOA PD TJ,TSTG TL 1 @ TC = 150°C Volts Amps 65 Switching Safe Operating Area @ TJ = 150°C 65A @ 600V Watts 250 Total Power Dissipation Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) 600 VGE(TH) Gate Threshold Voltage 6 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 2.1 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 500 2 Gate-Emitter Leakage Current (VGE = ±20V) µA 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts nA 3-2005 I GES 4.5 3 (VCE = VGE, I C = 1mA, Tj = 25°C) UNIT Rev A ICES MAX 050-7449 VCE(ON) TYP 1 APT15GP60BDQ1 APT15GP60BDQ1 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions VGE = 0V, VCE = 25V 210 Reverse Transfer Capacitance f = 1 MHz Gate Charge VGE = 15V 7.5 VCE = 300V 12 UNIT 15 Gate-to-Emitter Plateau Voltage MAX 1685 15 Input Capacitance Coes Output Capacitance Cres VGEP Qge TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge Switching Safe Operating Area TJ = 150°C, R G = 5, VGE = V 55 I C = 15A SSOA pF nC 65 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time I C = 15A Current Fall Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon1 Eon2 Eoff 8 12 VGE = 15V 70 I C = 15A Current Fall Time 55 ns 90 R G = 5 44 Turn-on Switching Energy (Diode) µJ 120 Inductive Switching (125°C) VCC = 400V Turn-off Delay Time Turn-off Switching Energy 150 6 Current Rise Time Turn-on Switching Energy 130 TJ = +25°C 5 ns 60 R G = 5 4 Eon2 tf 29 Turn-off Delay Time Turn-on Switching Energy td(off) 12 VGE = 15V Current Rise Time Eon1 tr 8 Inductive Switching (25°C) VCC = 400V 130 TJ = +125°C 265 66 µJ 270 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .50 RJC Junction to Case (DIODE) 1.35 Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 050-7449 Rev A 3-2005 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1 JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 30 15 TC=25°C 10 0 TC=-55°C TC=125°C 5 FIGURE 1, Output Characteristics(VGE = 15V) 100 60 40 TJ = 25°C 20 TJ = 125°C 3.5 TJ = 25°C. 250µs PULSE TEST