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APT102GA60B2 Datasheet

Part Manufacturer Description PDF Type
APT102GA60B2 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: T-MAX [B2]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 102; Original

APT102GA60B2

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Abstract: APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. APT102GA60B2 Single die IGBT FEATURES TYPICAL APPLICATIONS · Fast , APT102GA60B2/L TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V, VCE = 25V 630 Microsemi
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MIC4452
Abstract: Charge Switching Safe Operating Area Turn-On Delay Time APT102GA60B2_L TJ = 25°C unless otherwise , APT102GA60B2_L 350 Typical Performance Curves APT102GA60B2_L 300 VCE = 400V TJ = 25°C, or 125°C RG , Temperature Typical Performance Curves APT102GA60B2_L 1000 IC, COLLECTOR CURRENT (A) C , APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime Microsemi
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max8170
Abstract: APT102GA60B2_L TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , , the specifications and information contained herein. Typical Performance Curves APT102GA60B2_L , IC, COLLECTOR CURRENT (A) GE Typical Performance Curves APT102GA60B2_L 300 VCE = 400V , Performance Curves APT102GA60B2_L 1000 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 , APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8® is a high speed Microsemi
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Abstract: APT102GA60B2_L Min Typ 8170 630 78 294 56 106 307 28 37 212 101 1354 1614 27 37 247 142 2106 1852 J ns J ns nC , Rev C 6 - 2011 Typical Performance Curves 150 V GE APT102GA60B2_L 350 15V 13V 11V 300 , TIME (ns) VCE = 400V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT102GA60B2_L 300 td(ON), TURN-ON , Performance Curves 10000 1000 APT102GA60B2_L C, CAPACITANCE (pF) Cies 1000 IC, COLLECTOR CURRENT , APT102GA60B2 APT102GA60L 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through Microsemi
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APT102GA60B APT30DQ60
Abstract: APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 PLAD15KP SMBx6.0A MIL-PRF-19500 DO-41 RT100KP
Abstract: APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO Microsemi
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SP6-P N-channel MOSFET 800v 50a to-247 DRF1400 SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference APT10026L2FLLG 10F-A
Abstract: APT68GA60B APT80GA60B APT102GA60B2 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter smps 500w half bridge DRF1300 1000w inverter MOSFET APT30GT60BRG