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APT102GA60B2 Datasheet

Part Manufacturer Description PDF Type Ordering
APT102GA60B2 Microsemi Corporation Insulated Gate Bipolar Transistor - Power MOS 8; Package: T-MAX [B2]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 102;
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6 pages,
222.65 Kb

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APT102GA60B2

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Abstract: APT102GA60B2 APT102GA60L APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. APT102GA60B2 Single die IGBT FEATURES TYPICAL APPLICATIONS · Fast , APT102GA60B2/L TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V, VCE = 25V 630 ... Original
datasheet

2 pages,
123.9 Kb

MIC4452 APT102GA60L APT102GA60B2 APT102GA60B2 abstract
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Abstract: APT102GA60B2_L Min Typ 8170 630 78 294 56 106 307 28 37 212 101 1354 1614 27 37 247 142 2106 1852 J ns J ns nC , Rev C 6 - 2011 Typical Performance Curves 150 V GE APT102GA60B2_L 350 15V 13V 11V 300 , TIME (ns) VCE = 400V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT102GA60B2_L 300 td(ON), TURN-ON , Performance Curves 10000 1000 APT102GA60B2_L C, CAPACITANCE (pF) Cies 1000 IC, COLLECTOR CURRENT , APT102GA60B2 APT102GA60L APT102GA60L 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through ... Original
datasheet

6 pages,
236.21 Kb

APT102GA60B2 APT102GA60L APT102GA60B2 abstract
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Abstract: Charge Switching Safe Operating Area Turn-On Delay Time APT102GA60B2_L TJ = 25°C unless otherwise , APT102GA60B2_L 350 Typical Performance Curves APT102GA60B2_L 300 VCE = 400V TJ = 25°C, or 125°C RG , Junction Temperature Typical Performance Curves APT102GA60B2_L 1000 IC, COLLECTOR CURRENT (A , APT102GA60B2 APT102GA60L APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime ... Original
datasheet

6 pages,
222.66 Kb

MIC4452 APT102GA60L APT102GA60B2 APT102GA60B2 abstract
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Abstract: APTGT50DH120TG APT54GA60B APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 ... Original
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36 pages,
3034.92 Kb

Full bridge SMPS smps 2000W 3000w smps ARF1500 ARF476FL ARF463AG push pull converter 1000W output APT150GN60B2G 1000W solar inverter 1000W solar power inverter VRF2933 APT30GT60BRG 1000w inverter MOSFET datasheet abstract
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Abstract: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi's High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic contamination. These and other defects lead to early life failures, and screening for them is particularly important in large die devices. The stress tests that constitute Microsemi's high-reliabil ... Original
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45 pages,
2472.73 Kb

Microsemi Catalog INFINEON TVS diode process infineon catalog igbt 600v, dual MIL-PRF-19500 smd parts nomenclature tutorial 1500w tvs diode SMD PFC 1.5kw DO215AA smps 3kw SMBx6.0A PLAD15KP datasheet abstract
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Abstract: simens APTES80DA120C3G APT35DL120HJ APT36GA60B APT36GA60B APT44GA60B APT44GA60B APT54GA60B APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 APT27GA90K APT27GA90K APT35GA90B APT35GA90B APT43GA90B APT43GA90B ... Original
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40 pages,
2007.54 Kb

dc-dc converter 380V APT97N65 APT80F60J push pull converter 1000W output 9 PIN TO249 APT47N60BC3G smps 2500w APT8014L2LLLG APT30GF60JU2 45A, 1200v n-channel npt series igbt SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference IGBT triple modules 100A datasheet abstract
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