APM2306A APM2306 STD-020C RSI86-91 ANSI/J-STD-002 MIL-STD-883D-2003 883D-1005

N-Channel Enhancement Mode MOSFET Pin Description Features · 30V/3.5A , D RDS(ON)=42m(typ.) @ VGS=10V RDS(ON)=70m(typ.) @

APM2306A APM2306A N-Channel Enhancement Mode MOSFET Pin Description Features · 30V/3.5A , D RDS(ON)=42m(typ.) @ VGS=10V RDS(ON)=70m(typ.) @ VGS=5V · · · G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant) D Applications · Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems. S N-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2306 APM2306 Lead Free Code Handling Code Tem p. Range Package Code APM2306 APM2306 A : M06X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 1 www.anpec.com.tw APM2306A APM2306A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage Unit ±20 V 3.5 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current 1.3 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range PD* VGS=10V Maximum Power Dissipation RJA* A 14 A °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W 150 °C/W Note: *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) VSD a Test Condition VGS=0V, IDS=250µA Min. Typ. VDS=VGS, IDS=250µA 1 30 1 Diode Forward Voltage Gate Charge Characteristics Qg Total Gate Charge Unit V 1.5 µA 2 V ±100 VGS=±20V, VDS=0V Drain-Source On-state Resistance Max. 30 TJ=85°C Gate Leakage Current a APM2306A APM2306A VDS=24V, VGS=0V Gate Threshold Voltage IGSS RDS(ON) (TA = 25°C unless otherwise noted) nA VGS=10V, IDS=3.5A 42 65 VGS=5V, IDS=2.8A 70 90 ISD=1.25A, VGS=0V 0.8 1.3 12.5 16 m V b Qgs Gate-Source Charge Qgd VDS=15V, VGS=10V, IDS=3.5A Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 2.4 nC 1.3 2 www.anpec.com.tw APM2306A APM2306A Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics RG Gate Resistance (TA = 25°C unless otherwise noted) Test Condition Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) VGS=0V,VDS=0V,F=1MHz Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Min. Typ. Max. Unit b Ciss Notes: APM2306A APM2306A VGS=0V, VDS=25V, Frequency=1.0MHz 1.5 400 pF 80 45 10 Turn-off Fall Time 19 8 15 19 35 6.2 VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 12 ns a : Pulse test ; pulse width300µs, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 3 www.anpec.com.tw APM2306A APM2306A Typical Characteristics Drain Current Power Dissipation 4.0 1.0 0.9 3.5 0.8 ID - Drain Current (A) 3.0 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance it im )L on s( 300µs Rd ID - Drain Current (A) 10 Normalized Transient Thermal Resistance 50 1ms 1 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 2 Mounted on 1in pad o RJA : 150 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2306A APM2306A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 14 120 ID - Drain Current (A) RDS(ON) - On - Resistance (m) VGS= 5, 6, 7, 8, 9, 10V 12 10 8 6 4V 4 2 100 80 VGS=5V 60 VGS=10V 40 20 3V 0 0 0 1 2 3 4 5 0 2 4 6 8 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 12 1.4 Normalized Threshold Voltage 14 ID - Drain Current (A) 10 10 8 6 4 o TJ=125 C o T J=25 C 2 IDS=250µ 1.2 1.0 0.8 0.6 0.4 o TJ=-55 C 0 0 1 2 3 4 5 6 0.2 -50 -25 7 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2306A APM2306A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 20 VGS = 10V IDS = 3.5A 1.6 10 o IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 TJ=150 C o TJ=25 C 0.4 o 0.2 -50 -25 RON@Tj=25 C: 42m 0 25 50 75 1 0.0 100 125 150 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 600 VDS = 15V Frequency=1MHz ID = 3.5A VGS - Gate - source Voltage (V) C - Capacitance (pF) 500 Ciss 400 300 200 100 0 Coss Crss 8 6 4 2 0 0 5 10 15 20 25 30 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 0 6 www.anpec.com.tw APM2306A APM2306A Packaging Information SOT-23 D B 3 E H 2 1 e A L A1 Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 Inches Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 1.90/2.1 BSC. 2.40 0.37 Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 C 3.00 7 www.anpec.com.tw APM2306A APM2306A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91 RSI86-91, ANSI/J-STD-002 ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Jan., 2005 8 www.anpec.com.tw APM2306A APM2306A Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m