APM2150PU -20V/-8A APM2150P STD-020C RSI86-91 ANSI/J-STD-002 MIL-STD-883D-2003 - Datasheet Archive

 

P-Channel Enhancement Mode MOSFET Features · Pin Description -20V/-8A, RDS(ON)=125m (typ.) @ VGS=-4.5V RDS(ON)=160m (typ.)

 

APM2150PU APM2150PU P-Channel Enhancement Mode MOSFET Features · Pin Description -20V/-8A -20V/-8A, RDS(ON)=125m (typ.) @ VGS=-4.5V RDS(ON)=160m (typ.) @ VGS=-2.5V · · · G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) D Applications · Power Management in Desktop Computer or G DC/DC Converters S P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2150P APM2150P Lead Free Code Handling Code Temp. Range Package Code APM2150P APM2150P U : APM2150P APM2150P XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 1 www.anpec.com.tw APM2150PU APM2150PU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1 A TC=25°C -20 TC=100°C -12 TC=25°C -8* TC=100°C -5 TC=25°C 50 TC=100°C 20 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RJC 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in Pad Area PD Maximum Power Dissipation RJA -12 -3 -2 1.6 TA=100°C Continuous Drain Current TA=100°C TA=25°C ID -20 TA=100°C 300µs Pulse Drain Current Tested TA=25°C TA=25°C IDP 0.6 Thermal Resistance-Junction to Ambient 75 A A W °C/W Mounted on PCB of Minimum Footprint PD Maximum Power Dissipation RJA Thermal Resistance-Junction to Ambient -12 -2 -1 1 TA=100°C Continuous Drain Current TA=100°C TA=25°C ID -20 TA=100°C 300µs Pulse Drain Current Tested TA=25°C TA=25°C IDP 0.4 115 A A W °C/W Note: * Current limited by bond wire. Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 2 www.anpec.com.tw APM2150PU APM2150PU Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Test Condition VGS=0V, IDS=-250µA Min. Typ. VDS=VGS, IDS=-250µA -1 -30 Diode Characteristics a VSD Diode Forward Voltage -0.45 Unit V VGS=±10V, VDS=0V Drain-Source On-state Resistance Max. -20 TJ=85°C Gate Leakage Current a APM2150PU APM2150PU VDS=-16V, VGS=0V Gate Threshold Voltage IGSS RDS(ON) (TA = 25°C unless otherwise noted) -0.6 µA -1 V ±10 µA VGS=-4.5V, IDS=-2.9A 125 150 VGS=-2.5V, IDS=-2.6A 160 200 ISD=-1A, VGS=0V -0.8 -1.3 m V b Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=-15V, Frequency=1.0MHz 330 pF 50 25 6 12 8 15 10 19 5 10 7 VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6 Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge 11 10 ns b Qgs Gate-Source Charge Qgd VDS=-10V, VGS=-4.5V, IDS=-2.9A Gate-Drain Charge 1 nC 1 Notes: a : Pulse test ; pulse width300µs, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 3 www.anpec.com.tw APM2150PU APM2150PU Typical Characteristics Drain Current Power Dissipation 60 10 8 -ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 6 4 2 10 o 0 o TC=25 C 0 0 20 40 60 80 100 120 140 160 180 TC=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 Normalized Transient Thermal Resistance 100ms Rd s(o n) Lim it -ID - Drain Current (A) 50 1s DC 1 o TC=25 C 0.1 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 2 0.01 1E-4 1E-3 0.01 60 Mounted on 1in pad o RJA :75 C/W 0.1 1 10 100 600 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 2 4 www.anpec.com.tw APM2150PU APM2150PU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 300 20 VGS=-4,-5,-6,-7,-8V 18 RDS(ON) - On - Resistance (m) 270 16 -ID - Drain Current (A) -3V 14 12 -2.5V 10 8 -2V 6 4 -1.5V 240 VGS=-2.5V 210 180 VGS=-4.5V 150 120 90 60 2 -1V 0 0 1 2 3 4 30 5 0 4 8 12 16 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 20 Gate Threshold Voltage 20 1.8 IDS = -250µA Normalized Threshold Vlotage 1.6 -ID - Drain Current (A) 16 o Tj=25 C 12 o Tj=-55 C o Tj=125 C 8 4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 -50 -25 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 0 5 www.anpec.com.tw APM2150PU APM2150PU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 1.8 VGS = -4.5V IDS = -2.9A 10 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 125m 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.5 1.0 1.5 2.0 2.5 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 500 10 Frequency=1MHz C - Capacitance (pF) 400 350 Ciss 300 250 200 150 100 Coss 50 0 VDS= -10V 9 -VGS - Gate-source Voltage (V) 450 7 6 5 4 3 2 1 Crss 0 ID= -2.9A 8 5 10 15 20 0 25 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 0 6 www.anpec.com.tw APM2150PU APM2150PU Package Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 D1 A1 E1 Dim Millimeters Inches Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 D1 E 5.2 REF 6.35 E1 0.205 REF 6.73 0.250 5.3 REF 0.265 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 0.020 7 www.anpec.com.tw APM2150PU APM2150PU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91 RSI86-91, ANSI/J-STD-002 ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.3 - Jun., 2006 8 www.anpec.com.tw APM2150PU APM2150PU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process ­ Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm