AP9477GM 125/W - Datasheet Archive

 

Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS

 

AP9477GM AP9477GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS Lower Gate Charge D D D Fast Switching Characteristic 60V RDS(ON) D 90m ID 4A G SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Gate-Source Voltage ID@TA=25 ID@TA=70 Units 60 Drain-Source Voltage VGS Rating V ±25 V 3 4 A 3 3.1 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Value Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Unit 50 /W 200830041 AP9477GM AP9477GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.04 - V/ VGS=10V, ID=4A - - 90 m VGS=4.5V, ID=3A - - 120 m VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance VGS=0V, ID=250uA 2 Max. Units VDS=10V, ID=4A - 6 - S o VDS=60V, VGS=0V - - 10 uA o Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA Gate-Source Leakage IDSS VGS=±25V - - ±100 nA ID=4A - 6 10 nC Drain-Source Leakage Current (Tj=25 C) IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC VDS=30V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 16 - ns tf Fall Time RD=30 - 3 - ns Ciss Input Capacitance VGS=0V - 510 810 pF Coss Output Capacitance VDS=25V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Rg Gate Resistance f=1.0MHz - 1.4 - Min. Typ. IS=2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=4A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width