AON7428 0E-01 0E-02 0E-03 0E-04 0E-05

30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS(ON)

AON7428 AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. VDS RDS(ON) (at VGS=10V) 30V 50A < 2.8m RDS(ON) (at VGS = 4.5V) < 3.6m ID (at VGS=10V) 100% UIS Tested 100% Rg Tested D Top View DFN 3.3x3.3 Top View Bottom Pin 1 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Maximum 30 ±20 250 34 IDSM TA=70°C A 39 IDM TA=25°C V 50 ID TC=100°C C Units V A 27 Avalanche Current C IAR, IAS 50 A Repetitive avalanche energy L=0.1mH C EAR, EAS 125 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: June 2009 6.2 Steady-State Steady-State RJA RJC www.aosmd.com W 4 TJ, TSTG Symbol t 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7428 AON7428 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min 30 ID=250µA, VGS=0V VDS=30V, VGS=0V Typ Max 36 V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.1 VGS=10V, VDS=5V Units 250 µA 100 nA 1.7 2.3 V 2.3 2.8 3.8 4.6 VGS=4.5V, ID=20A 2.9 3.6 VDS=5V, ID=20A 100 VGS=10V, ID=20A RDS(ON) TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Gate resistance Qgs Gate Source Charge Qgd Turn-On Rise Time tD(off) Turn-Off DelayTime tf S 1 V 40 A pF 560 pF 280 390 pF 1.7 3.5 5 49 60 nC 20 24 30 nC 8 10 12 nC 5 VGS=10V, VDS=15V, ID=20A 3120 430 40 VGS=0V, VDS=0V, f=1MHz 2600 300 8 11 nC Turn-On DelayTime tr m 170 Gate Drain Charge tD(on) 0.7 m 2080 VGS=0V, VDS=15V, f=1MHz Reverse Transfer Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge A 7 ns 58 ns 20 Turn-Off Fall Time ns 10 VGS=10V, VDS=15V, RL=0.75, RGEN=3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 30 37 45 ns nC A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R JA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using