AON4421 0E-01 0E-02 0E-03 0E-04 0E-05

P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AON4421 uses advanced trench

AON4421 AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AON4421 AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch. ID (at VGS=-10V) -8A RDS(ON) (at VGS=-10V) < 26m RDS(ON) (at VGS=-4.5V) < 34m -30V VDS ESD Protected -RoHS Compliant -Halogen Free D DFN 3x2 Top View Bottom View Pin 1 D D D D D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: February 2009 2.5 Steady-State Steady-State W 1.6 TJ, TSTG Symbol t 10s A -6 -60 PD TA=70°C V -8 IDM TA=25°C Units V ±20 ID TA=70°C B Maximum -30 RJA RJL www.aosmd.com °C -55 to 150 Typ 42 74 25 Max 50 90 30 Units °C/W °C/W °C/W Page 1 of 5 AON4421 AON4421 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 Typ Max V -1 TJ=55°C -5 VDS=VGS ID=-250µA -0.8 VGS=-10V, VDS=-5V µA -1.8 V 26 28 34 27 34 m -1 V -3 A 1120 pF VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current -1.3 21 Gate-Body leakage current VGS(th) ID(ON) -60 VGS=-10V, ID=-8A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, ID=-7A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=-5V, ID=-8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Gate resistance Qgs Gate Source Charge Qgd Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz tD(off) Turn-Off DelayTime tf S 170 pF pF 8 17.6 VGS=-10V, VDS=-15V, ID=-8A Turn-On DelayTime tr 22 -0.74 m 120 Gate Drain Charge tD(on) A 930 VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge µA ±10 IGSS RDS(ON) Units 21 nC 8.6 10 nC nC 6 Turn-Off Fall Time nC 3.4 VGS=-10V, VDS=-15V, RL=1.9, RGEN=3 2 ns 7 ns 40 ns 30 trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs ns 32 22 ns nC A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using