AO6804A AO6804A/L AO6804AL -AO6804AL 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6804A/L uses advanced

AO6804A AO6804A Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6804A/L AO6804A/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. VDS = 20V ID = 5.0A RDS(ON) < 28m RDS(ON) < 30m RDS(ON) < 34m RDS(ON) < 39m AO6804A AO6804A and AO6804AL AO6804AL are electrically identical. -RoHS Compliant -AO6804AL -AO6804AL is Halogen Free (VGS = 4.5V) (VGS = 4.5V) (VGS = 4.0V) (VGS = 3.1V) (VGS = 2.5V) ESD Protected! D2 D1 TSOP6 TSOP6 Top View Rg Rg G1 S1 D1/D2 S2 1 6 2 5 3 4 G2 G1 D1/D2 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A ±12 VGS TA=25°C V 5 TA=70°C ID TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C 25 Alpha & Omega Semiconductor, Ltd. W 0.8 TJ, TSTG Symbol t 10s Steady State Steady State A 1.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 4 IDM Pulsed Drain Current B Power Dissipation A 20 Units V Maximum RJA RJL -55 to 150 Typ 76 118 54 Max 95 150 68 °C Units °C/W °C/W °C/W www.aosmd.com AO6804A AO6804A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V Typ Max Units 20 V VDS = 20V, VGS = 0V 1 TJ = 55°C 5 µA ±10 A 0.7 1 V 18 23 28 26 33 40 VGS = 4.0V, ID = 4.5A 19 24 30 m VGS = 3.1V, ID = 4.5A 20 27 34 m VGS = 2.5V, ID = 4.0A 21 30 39 m 1 V 1.3 A 225 pF IGSS Gate-Body leakage current VDS = 0V, VGS = ±10V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 0.5 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 25 VGS = 4.5V, ID = 5.0A TJ=125°C RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS = 5V, ID = 5.0A VSD Diode Forward Voltage IS = 1A,VGS = 0V IS A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Rg Gate resistance VGS=0V, VDS=10V, f=1MHz Gate Source Charge S 95 pF 18 pF VGS=0V, VDS=0V, f=1MHz 2.7 4 5.6 7.5 VGS= 4.5V, VDS= 10V, ID= 5A 0.85 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs 18 0.65 180 Reverse Transfer Capacitance m k nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 172 ns tr Turn-On Rise Time 368 ns tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=2.0, RGEN=3 IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge 2.94 s 2.5 32 3.2 s ns nC 43 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA Rev1 Nov 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804A AO6804A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 4.5V 3V VDS= 5V 2V 2.5V 15 ID(A) ID (A) 15 20 1.8V 20 10 10 5 25°C 5 VGS=1.5V 125°C -40°C 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 32 Normalized On-Resistance 1.6 30 VGS= 2.5V RDS(ON) (m ) 1 28 VGS= 3.1V 26 24 VGS= 4.0V VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 VGS= 4.5V 22 0.6 0 2 4 I6=-6.5A, 8 dI/dt=100A/µs 10 F -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 80 ID= 5.0A 1E+00 70 1E-01 1E-01 IS (A) 60 RDS(ON) (m ) -25 50 125°C 1E-02 1E-02 1E-03 1E-03 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 40 125°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 1E-04 -40°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 30 25°C 1E-05 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 1E-06 -40°C 10 1 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6804A AO6804A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 100 Coss Crss 1 0 10 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 100ms 100 Power (W) ID (Amps) 10 0.1 1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 10s 0.1 0.00001 IF=-6.5A, dI/dt=100A/µs 10 100 1 VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=150°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804A AO6804A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com