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| Part | Manufacturer | Description | Type | Ordering |
| AO4813L | Alpha & Omega Semiconductors | Dual P-Channel Enhancement Mode Field Effect Transistor |
4 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AOS Semiconductor Product Reliability Report AO4813/AO4813L, Plastic Encapsulated Device rev , Pb-free (meets ROHS & Sony 259 specifications). AO4813L is a Green Product ordering option. AO4813 AO4813 and AO4813L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter , with silica filler 90/10 UL-94 UL-94 V-0 Ti / Ni / Ag Up to Level 1 * AO4813L (Green Compound) Standard , assembler and mold compound supplier III. Result of Reliability Stress for AO4813 AO4813 (Standard) & AO4813L ... | Original |
5 pages, |
JEDEC htrb HTGB AO4813/AO4813L AO4813/AO4813L abstract |
| Abstract: AO4813 AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813 AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 AO4813 is Pb-free (meets ROHS & Sony 259 specifications). AO4813L is a Green Product ordering option. AO4813 AO4813 and AO4813L are electrically identical. VDS (V) = -30V ID = -7.1 A (V GS = -10V) RDS(ON) < 25m (VGS = -10V ... | Original |
4 pages, |
diode 71A AO4813L AO4813 AO4813 abstract |
| Abstract: AO4813 AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813/L AO4813/L uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4813 AO4813 and AO4813L are electrically identical. -RoHS Compliant -AO4813L is Halogen Free VDS (V) = -30V ID = -7.1 A (VGS = -10V) RDS(ON) < 25m (VGS = -10V) RDS(ON) < 40m (VGS = -4.5V) 100% UIS Tested! SOIC-8 Top View SOIC-8 S2 G2 ... | Original |
5 pages, |
AO4813L AO4813 AO4813/L -AO4813L AO4813 abstract |