AO4443 AO4443/L AO4443L -AO4443L 0E-01 0E-02 0E-03 0E-04 0E-05 0E-06

P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4443/L uses advanced trench technology to

AO4443 AO4443 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4443/L AO4443/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4443 AO4443 and AO4443L AO4443L are electrically identical. -RoHS Compliant -AO4443L -AO4443L is Halogen Free(Green Product) VDS (V) = -40V ID = -6.5 A (VGS = -10V) RDS(ON) < 42m (VGS = -10V) RDS(ON) < 63m (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t 10s Steady-State Steady-State A -5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -6.5 TA=25°C Power Dissipation A Maximum -40 RJA RJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W AO4443 AO4443 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 Typ Max Units V -1 VDS=-32V, VGS=0V TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 µA ±100 nA -1.9 -3 V 33.3 42 54 68 VGS=-4.5V, I D=-5A 48 63 VDS=-5V, ID=-6A 14 VGS=-10V, I D=-6A RDS(ON) TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -0.75 m m S -1 V -6 A 657 VGS=-10V, VDS=-20V, I D=-6A 143 pF pF 6.5 14.2 VGS=0V, VDS=0V, f=1MHz pF 63 VGS=0V, VDS=-20V, f=1MHz Reverse Transfer Capacitance Rg A nC 7.1 nC 2.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.1 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-20V, RL=3.7, RGEN=3 8 ns 26.5 ns 11.5 ns Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 21.9 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 14.9 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. given application depends on the user's specific board design. The current rating is based on the t t B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. 80µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained using