N-Channel Enhancement Mode Field Effect Transistor
271.1 Kb, 7 Pages.
AO4408
Alpha & Omega Semiconductors
MOSFET, N-Channel Enhancement Mode Field Effect Transistor
119.16 Kb, 5 Pages.
AO4408L
Alpha Semiconductor
N/A
119.15 Kb, 5 Pages.
Fulltext Datasheet Results
1 - 6 of about 6 for AO4408
First line: AO4408, AO4408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor AO4408 uses advanced trench technology provide excellent RDS(ON), gate charge fast switching. This device makes excellent high side switch notebook core DC-DC conversion. AO4408L(Green Product) offered lead-free packaAbstract: .. AO4408, AO4408L Green Product N-Channel Enhancement Mode Field Effect Transistor. Rev 3: June 2004. Features. VDS V = 30V ID = 12A RDS ON < 13mΩ VGS = 10V RDS ON < 16mΩ VGS = 4.5V General Description .. Tags: AO4408 AO4408L
119.15 Kb
5 Pages
Original
First line: AO4408 N-Channel Enhancement Mode Field Effect Transistor AO4408/L uses advanced trench technology provide excellent RDS(ON), gate charge fast switching. This device makes excellent high side switch notebook core DC-DC conversion. AO4408 AO4408L electrically identical. -RoHS Compliant -AO4408L HalogAbstract: .. AO4408 N-Channel Enhancement Mode Field Effect Transistor. Features. VDS V = 30V ID = 12A VGS = 10V RDS ON < 13mΩ VGS = 10V RDS ON < 16mΩ VGS = 4.5V UIS Tested. Rg,Ciss,Coss,Crss Tested. General .. Tags: AO4408 AO4408 L AO4408L
162.3 Kb
6 Pages
Original
First line: AO4408 N-Channel Enhancement Mode Field Effect Transistor AO4408 uses advanced trench technology provide excellent RDS(ON), gate charge fast switching. This device makes excellent high side switch notebook core DC-DC conversion.Abstract: .. AO4408 N-Channel Enhancement Mode Field Effect Transistor. Nov 2002. Features. VDS V = 30V ID = 12A RDS ON < 13mΩ VGS = 10V RDS ON < 16mΩ VGS = 4.5V General Description. The AO4408 uses advanced .. Tags: AO4408