N-Channel Enhancement Mode Field Effect Transistor
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First line: AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor AO3418 uses advanced trench technology provide excellent RDS(ON), very gate charge operation with gate voltages 2.5V. This device suitable load switch applications. AO3418L Green Product offered lead-free package.Abstract: .. AO3418 AO3418 , AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor. Rev 3: Nov 2004. Features. VDS V = 30V ID = 3.8 A RDS ON < 60mΩ VGS = 10V RDS ON < 70mΩ VGS = 4.5V RDS ON < 155m 155m Ω .. Tags: AO3418L*AO3418 AO3418L
111.36 Kb
4 Pages
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First line: AO3418 N-Channel Enhancement Mode Field Effect Transistor AO3418/L uses advanced trench technology provide excellent RDS(ON), very gate charge operation with gate voltages 2.5V. This device suitable load switch applications. AO3418 AO3418L electrically identical. -RoHS Compliant -AO3418L Halogen FreAbstract: .. AO3418 AO3418 and AO3418L are electrically identical. -RoHS Compliant -AO3418L is Halogen Free. G. D. S. S. G. D. TO-236 TO-236 SOT-23 SOT-23 Top View. Alpha & Omega Semiconductor, Ltd.. AO3418 AO3418 . Symbol Min Typ Max Units. BVDSS .. Tags: AO3418AO3418 AO3418 L AO3418L