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Part Manufacturer Description Datasheet BUY
LT1015MJ8/883B Linear Technology IC DUAL LINE RECEIVER, CDIP8, CERDIP-8, Line Driver or Receiver visit Linear Technology - Now Part of Analog Devices
LT1015CJ8 Linear Technology IC LINE RECEIVER, CDIP8, 0.300 INCH, CERAMIC, DIP-8, Line Driver or Receiver visit Linear Technology - Now Part of Analog Devices
LT1015CN8#PBF Linear Technology IC LINE RECEIVER, PDIP8, PLASTIC, DIP-8, Line Driver or Receiver visit Linear Technology - Now Part of Analog Devices
LT1015MJ8 Linear Technology IC LINE RECEIVER, CDIP8, 0.300 INCH, CERAMIC, DIP-8, Line Driver or Receiver visit Linear Technology - Now Part of Analog Devices
LT1015CN8 Linear Technology IC LINE RECEIVER, PDIP8, 0.300 INCH, PLASTIC, DIP-8, Line Driver or Receiver visit Linear Technology - Now Part of Analog Devices
101514S15E Integrated Device Technology Inc -0, Tube visit Integrated Device Technology

ANI 1015

Catalog Datasheet MFG & Type PDF Document Tags

ANI 1015

Abstract: IT T E R ,360 4LSTUE) ( M l 35} O R DER CODE B R A N C iN G S D iO iS S D 101-5 PSN , « l« c t o r - E n w w r Vysiayts >8-0 V V f ; p;q C itsleetor â  Â£-ni;te>' V o iia y y , JundSdvcsiw.'nwwmaJ Resistance Marph 1S«9 4.4 1/5 127 SD 1015 ELECTRICAL CHARACTERISTICS (Toass -2 6
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ANI 1015

Abstract: 12020213 . CED CD 1 (13.75) © ? (10.15) i _ J B - = = = = L _ CD à liu -P iA A , DIMENSIONS ANI LIMITS ARE ESTABLISHED TAXI CONN THIRD ANGLE PROJECTION DRAWING NUMBER M M/P 280
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sj 2038

Abstract: 2SD444 Outline 2059 (unit : mm) H c IC B e - M tì 1.0-15 .o-oi r Bs Base C: Collector E: Emitter , V le - Vbe 2SC4443 Vnp = 1 V 11 1 P/O p «H ¡ni M/ 1 f1 0.2 , â'"i.s â'" o.t 1 JUS â  111 I Iii I I : I I Eì ani «er w "1c Tfl) Ci Collector B: Base
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2SA1685 sj 2038 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 0OG707 2SA1685/2SC4443

ANI 1015

Abstract: CALCULATIONS: DISTANCE FROM MATING END OF CONNECTOR TO FRONT OF CABLE CORE IS 10.15/7.05 B I\ > D A , INDICATE REFERENCE DIMENSIONS ANI NC TOLERANCE ID to L IM IT S ARE ESTABLISHED 15317574 PART lb
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29N096 08AU06 CDA-210 5M-1994 ADDENXJU-2001 03DE96

ANI 1015

Abstract: 2 1016 8 1015 8 1014 1014 7 1014 2 102 1 T Y P S ±0.4 T E R M I N A L IS C O , SENSITIVE DIMENSION is lì DIMENSIONS ENCLOSED IN REFERENCE DIMENSIONS ANI LIMITS ARE ESTABLISHED
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14MR00 07MR06 Z4JL06 PM003624

7900801CX

Abstract: 7820A DRAWING 86 Powered by ICminer.com Electronic-Library Service CopyRight 2003 indN I ANI Z indNi ANI I IH I O , conformance inspection. The following additional criteria shall apply: a. Burn-in test (method 1015 of MIL-STD
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7900801CX SNJ55182W 7820A DRAWING 79008 Ani 1015 diagram 7900801 MIL-STD-883 MIL-M-38510 DS7820AJ/883 SMJ55182J 7900801DX

7900801cx

Abstract: ANI 1015 193A FEB 86 This Material Copyrighted By Its Respective Manufacturer indN I ANI Z indNi ANI I IH I , following additional criteria shall apply: a. Burn-in test (method 1015 of MIL-STD-883). (1) Test
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1041V 7820A DS7820AW/883 79008012X SNJ55182FK M38510/10408 MIL-M-38510/104

ANI 1015

Abstract: DC-4067-13 10-15 seconds. 4. Icc2 at STOP Mode and DSP Pause will show a current of 1 -2 mA, then will jump to 5-7 mA, and will settle at 3-4 mA. Settling time is about 10-15 seconds. The following operating errata , 10-15 seconds. 2. ICC2 at STOP Mode and DSP Pause will show a current of 1-2 mA, then will jump to 5-7 mA, and will settle at 3-4 mA. Settling time is about 10-15 seconds. The following operating errata , is about 10-15 seconds. DC-4067-13 (5-17-94) 1 ^ZiLCE Z86C95 DSP CPS DC-4067-13 GENERAL
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fsca QFP-80 XTAL1 29 A15-A8

ANI 1015

Abstract: 2 SAME AS TYPE 101 EXCEPT AS SHOWN ( 2X dD (32.5) 39 ) t 37 ) I ( 4X 2X 10.15 , M/P 800 DIMENSIONS ENCL05ED IN f 1 INDICATE REFERENCE DIMENSIONS ANI to TOLERANCE ID NC LIMITS
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02N004 05JN06

ANI 1015

Abstract: equivalent diode for K 1457 silicon resistivity: 1Qcm Concentration: 5 x 1015 at/cm3 The process used leads to a barrier height of , in Fig. 4. Ani ¡channel N + diffusion layer L e _ Silicon 'dioxide N Epitaxial silicon
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equivalent diode for K 1457

ANI 1015

Abstract: t3hs Outline 2059 (unit : mm) c B E tì â . 1 2-0 -A -Iâ'"\- 1Ï â  i lo-3 1-0.15 ' SANYO: MCP B : Base C , JUS â  111 I Iii I I : I I Eì ani «er w "1c Tfl) Ci Collector B: Base SANYO: PCP Case Outlineâ
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2SA1688 2SA1256 t3hs TRANSISTOR SE 135 100MH 2SA1688-

rrmj

Abstract: RMJ2 ,31,32 RRMJ 4, 40 0-4-0.6 0-8-1.0 1.0-1,5 1,5-2,0 RMJ 1,10,11,12 RMJS 1.0-1.5 1.5-2.0 RMJ 2, 5,20,50 1.0-1.5 2,0-3,0 TJii i'.Vj^ct JiWCES ^irtft jbpve Qpply foe ronrtnrt element if any contact has been , 0.7 for RMJ 11 and RP.MJ 12 ani abax 0 9 Cor wlwjw rclayi. g) Th* value is given the ititf ritlftg
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rrmj RMJ2 ASEA rrmj RMJ 2 ASEA rrm ASEA rrmj4 J33-I
Abstract: â'"nI râ'"1 2 0 I .00+ -.0 5 5 TYP .375 "R E F l * â'" .100 TYP. 16 LEAD CERDIP 20 , -883 G rade P roduct B urn-in M ethod 1015, C o n d itio n D 100% Standard G rade Product , equivalent) per Method 1015, Cond. D, followed by 100% temperature testing of all DC, AC and functional -
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IDT54/74HCT139 54/74LS139 72T339 IDT72T339 54/74S139 IDT54/7
Abstract: inputs with built-in pull-up resistors: (10) Analog input voltage V ani (11) High-level , ) .IORDY ( 1 5 ) .DMARQ [INOUT] (4 ) . DO to D7, IOO to 1015 (5 ) . INTO , RD, WR, SUAO to SUA7, CS DO to D7 IOO to 1015 RAO to RA9, RASO, R A S1, RAS2, CASO, CAS 1, OE, UWE , pull-up resistors. 29 1015 B 30 A TIPSYN C 0 31 BIDATA B 32 BICLK B -
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LC898093

5962-XXXXXZZ

Abstract: ANI 1015 confonnance inspection. The following additional a. Burn-in test, method 1015 of MIL-STD-883. (1) ^oV^r^n/' , sample testi o ani c n h al the level specified in the acquisition document. RHA tests for device , burn-in 1015 10(Ã" J 1 Burn-in 1015, total of 240 hrs. at +125°C lOOi 1 1 Radiographic 2012 1004 1 5
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5962-XXXXXZZ SHA-11 qml-38535 527H I29/609I 5962-E1789 L-M-38510 MIL-H-38534 MIL-1-38535

VFD075E43A

Abstract: vfd037e43a / 0.0 ~ 6550 sec 0.0 10.15 0.00 ~ 600.0 Hz 0.00 10.16 0.00 ~ 600.0 Hz
Delta Electronics
Original
VFD007E21A VFD015E21A VFD022E21A VFD022E23A VFD037E23A VFD007E43A VFD075E43A vfd037e43a VFD055E43A vfd015e43a delta plc cable pin diagram RS-485 03/CTL 89/336/EEC 93/68/EEC VFD002E21A VFD002E21P VFD004E21A
Abstract: voltage v ani (5) High-level output voltage v oh lOH = -1 2 mA: (8) Low-level output , , BSY, MSG, SEL, RST, REQ, I/O, C/D, Ã"CK, Ã"TN RD, WR, SUAO to SUA7, CS DO to D7 IOO to 1015 RAO to , 29 1015 B 30 ATIPSYNC I 31 BIDATA B 32 BICLK B 33 WOBBLE I -
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LC898023K
Abstract: resistors: (4) Voh V 3/4 V dd V,L v ani V V 0.8 V dd CMOS level Schmitt trigger , , C/D, ACK, ATN RD, WR, SUAO to SUA7, CS DO to D7 IOO to 1015 RAO to RA9, RASO, R A Sl, RAS2, CASO , 26 1012 B 27 1013 B 28 1014 B 29 1015 B 30 ATIPSYNC I 31 -
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LC898023
Showing first 20 results.