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AND8010/D MC100LVELT22 LVELT22 00E15 L01WB L02WB L03WB L04WB L05WB L06WB L07WB - Datasheet Archive
ECLinPS LiteTM MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE ON Semiconductor Logic
AND8010/D AND8010/D ECLinPS LiteTM MC100LVELT22 MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE ON Semiconductor Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level interconnect modeling with the Low Voltage ECLinPS Lite Translator TTL to PECL "LVELT22 LVELT22" device. The LVELT22 LVELT22 device is a dual 1 Bit translator from LVTTL/LVCMOS levels to PECL levels. This kit contains model netlists and transistor parameter descriptions for the Input and Output buffers, package models, and ESD protection networks for Input and Output circuits used by the LVELT22 LVELT22 device. These may be interconnected as subcircuits to simulate buffer signals. Subcircuit Interconnects for Input Pins Board Pin Connection Package Model ESD Model Input Buffer Model Subcircuit Interconnects for Output Pins Output Buffer Model ESD Model Package Model Board Pin Connection Figure 1. Input and Output Models Package The MC100LVELT22 MC100LVELT22 is only packaged in the 8 pin SOIC case outline. The coupled transmission line package model, LINES, may to be added to all external pins. In this subcircuit model, all external board side connections of input, output, and supply pins are called N*O and all internal chip side connections of input, output, and supply pins are referred to as N*I as shown in Table 1. © Semiconductor Components Industries, LLC, 2002 April, 2002 Rev. 1 Table 1. ÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input and Output Buffers The LVTTLLVPECL Translator subcircuits use SPICE level 3 netlists in circuit buffer models LVTTLIN and LVTTLOUT. All inputs and outputs are protected by ESD "Electro Static Discharge" protection circuitry. If the user would like to just simulate the output behavior, LVTTLOUT circuit can be stimulated with internal signals levels: Voltage Internal Input Low VIIL VCC1.1 Voltage Internal Input High VIIH VCC0.8 8 Pin SOIC Package Model Pin Connection Outside to Board Internal to Chip 1 N01O N01I 2 N02O N02I 3 N03O N03I 4 N04O N04I 5 N05O N05I 6 N06O N06I 7 N07O N07I 8 N08O N08I The LINES model considers the capacitance to be lumped. Minimum (fastest) useable edge rate is 0.076 NS. 1 Publication Order Number: AND8010/D AND8010/D AND8010/D AND8010/D Modeling The bias driver schematics for VCS and V1 generation are not included in this kit, as they are unnecessary for interconnection simulation. In addition their detailed netlist modeling would result in a relatively large increase in simulation time. Alternatively the internal reference voltages should be driven with ideal constant voltage sources. This model kit is intended for simulations within the specified power supply range. If supply voltages drop below minimum specification, VCS and V1 can no longer be assumed to be constant. Thus, this model kit should not be used for power up or power down simulations. LVPECL outputs should be terminated properly, such as through ohms to VTT=VCC2V. The common global nodes are as follows: *100 VCC *200 VEE *300 VCS internal TTL reference = VEE+1.3V *400 V1 internal TTL reference = 1.5 *10 IN *5 QI VCC1.1 TO VCC0.8 *6 QIB VCC0.8 TO VCC1.1 *20 D *21 DB *60 Q *62 QB *1 to external PIN *2 to internal chip CKT *3 external PIN and internal chip CKT node *LVTTLIN .SUBCKT LVTTLIN 100 200 300 400 10 5 6 Q1 1 10 3 200 TN6 Q2 2 400 3 200 TN6 Q3 100 1 6 200 TN6 Q4 100 2 5 200 TN6 Q5 3 300 7 200 TN6 Q6 6 300 8 200 TN6 Q7 5 300 9 200 TN6 R1 100 1 266 * TC=0.26M, 0.9U R2 100 1 266 * TC=0.26M, 0.9U R3 7 200 42 * TC=0.26M, 0.9U R4 8 200 42 * TC=0.26M, 0.9U R5 9 200 42 * TC=0.26M, 0.9U .ENDS LVTTLIN .SUBCKT LVTTLOUT 100 Q1 62 20 1 200 Q2 60 21 1 200 Q3 1 300 2 200 R1 100 60 269 * TC=0.26M, 0.9U R2 100 62 269 * TC=0.26M, 0.9U R3 2 200 112 * TC=0.26M, 0.9U .ENDS LVTTLOUT 200 300 20 21 60 62 TRANA TRANA TRANA ESD The ESD protection for the inputs pins D0 and D1 uses the subcircuit model ESDIN. In the ESDIN model, a diode (CBVCC) goes to VCC with a parallel resistor of high value (75 kW) and a diode pair (CBSUB devices) go to VEE. The input has a series resistor. .SUBCKT ESDIN 100 200 1 2 D1 1 100 CBVCC D2 1 200 CBSUB http://onsemi.com 2 AND8010/D AND8010/D D3 1 200 CBSUB R1 1 VCC 75K * TC=0.26M, 0.9U R2 1 2 93 .END ESDIN The ESD model for the PECL output pins (Q0, Q0bar, Q1, Q1bar) use subcircuit model ESDOUT. The ESDOUT is modeled as diode (CBVCC) to VCC and a diode pair (CBSUB devices) to VEE. .SUBCKT ESDOUT 100 200 1 D1 1 100 CBVCC D2 1 200 CBSUB D3 1 200 CBSUB .END ESDOUT .MODEL CBVCC D + ( IS = 1.00E15 00E15 CJO = 527fF Vj = 0.545 M = 0.32 BV = 14.5 + IBV = 0.1E6 XTI = 5 TT = 1nS ) .MODEL CBSUB D + ( IS = 1.00E15 00E15 CJO = 453fF TT = 1nS ) .MODEL TN6 NPN +(IS = 8.56E18 + ISE = 4.48E16 + IRB = 13.2uA + CJE = 29.9fF + CJC = 31.2fF + CJS = 60.9fF + TF = 8pS + ISC=0 EG=1.11 * BF = 120 NF = BR = 10 NE = RB = 291.4 RBM = VJE = .9 MJE = VJC = .67 MJC = VJS = .6 MJS = TR = 1nS XTF = XTI=5.2 PTF=0 1 VAF = 30 IKF 2 VAR = 5 IKR 95.0 RE = 13.3 RC .4 XTB = 0.73 .32 XCJC= .3 .4 FC = .9 10 VTF = 1.4V ITF KF=0 AF=1 NR=1 .MODEL TRANA NPN +(IS = 2.09E17 BF = 120 NF = 1 VAF = 30 IKF + ISE = 1.09E15 BR = 10 NE = 2 VAR = 5 IKR + IRB = 32.2uA RB = 122.6 RBM = 42.2 RE = 5.44 RC + CJE = 67.4fF VJE = .9 MJE = .4 XTB = 0.73 + CJC = 53.8fF VJC = .67 MJC = .32 XCJC= .3 + CJS = 103fF VJS = .6 MJS = .4 FC = .9 + TF = 8pS TR = 1nS XTF = 10 VTF = 1.4V ITF + ISC=0 EG=1.11 XTI=5.2 PTF=0 KF=0 AF=1 NR=1 * 1.75 x 13.50 emitter (2 emitters) PACKAGE MODEL TRANSMISSION LINES * CONNECT CHIP SIDE TO N*I AND BOARD SIDE TO N*O * .SUBCKT LINES N01I N01O N02I N02O N03I N03O N04I N04O + N05I N05O N06I N06O N07I N07O N08I N08O L01WB L01WB N01I N01M 1.367E09 L01 N01M N01O 7.794E10 C01 N01M 0 2.445E13 L02WB L02WB N02I N02M 1.287E09 L02 N02M N02O 5.473E10 C02 N02M 0 1.888E13 L03WB L03WB N03I N03M 1.287E09 L03 N03M N03O 5.473E10 C03 N03M 0 1.901E13 L04WB L04WB N04I N04M 1.367E09 L04 N04M N04O 7.723E10 C04 N04M 0 2.443E13 L05WB L05WB N05I N05M 1.367E09 L05 N05M N05O 7.710E10 C05 N05M 0 2.478E13 L06WB L06WB N06I N06M 1.287E09 L06 N06M N06O 5.489E10 C06 N06M 0 1.916E13 http://onsemi.com 3 = 10.5mA = 922uA = 62.7 = 27.6mA NC=2) = 25.7mA = 2.25mA = 32.8 = 67.5mA NC=2) AND8010/D AND8010/D L07WB L07WB N07I L07 N07M C07 N07M L08WB L08WB N08I L08 N08M C08 N08M K0102 K0102 L01 K0102WB K0102WB L01WB L01WB C0102 C0102 N01O K0103 K0103 L01 K0103WB K0103WB L01WB L01WB K0203 K0203 L02 K0203WB K0203WB L02WB L02WB C0203 C0203 N02O K0204 K0204 L02 K0204WB K0204WB L02WB L02WB K0304 K0304 L03 K0304WB K0304WB L03WB L03WB C0304 C0304 N03O K0305WB K0305WB L03WB L03WB K0405WB K0405WB L04WB L04WB K0406WB K0406WB L04WB L04WB K0506 K0506 L05 K0506WB K0506WB L05WB L05WB C0506 C0506 N05O K0507 K0507 L05 K0507WB K0507WB L05WB L05WB K0607 K0607 L06 K0607WB K0607WB L06WB L06WB C0607 C0607 N06O K0608 K0608 L06 K0608WB K0608WB L06WB L06WB K0708 K0708 L07 K0708WB K0708WB L07WB L07WB C0708 C0708 N07O .ENDS LINES N07M N07O 0 N08M N08O 0 L02 L02WB L02WB N02O L03 L03WB L03WB L03 L03WB L03WB N03O L04 L04WB L04WB L04 L04WB L04WB N04O L05WB L05WB L05WB L05WB L06WB L06WB L06 L06WB L06WB N06O L07 L07WB L07WB L07 L07WB L07WB N07O L08 L08WB L08WB L08 L08WB L08WB N08O 1.287E09 5.495E10 1.930E13 1.367E09 7.786E10 2.451E13 0.1687 0.3400 3.674E14 0.0702 0.1847 0.1822 0.3505 3.521E14 0.0682 0.1847 0.1694 0.3400 3.675E14 0.1847 0.3455 0.1847 0.1697 0.3400 3.720E14 0.0682 0.1847 0.1824 0.3505 3.570E14 0.0702 0.1847 0.1691 0.3400 3.632E14 ECLinPS Lite and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC. 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