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AN6721 SIP007-P-0000 - Datasheet Archive
IGBT Drive IC s Overview Unit : mm 6.0±0.3 2.4±0.25 3.5±0.25 2.54 7 6 s Features 0.5±0.1 4 3 2 1 0.3
AN6721 AN6721 IGBT Drive IC s Overview Unit : mm 6.0±0.3 2.4±0.25 3.5±0.25 2.54 7 6 s Features 0.5±0.1 4 3 2 1 0.3 + 0.1 0.05 1.5±0.25 able to be set separately · Shunt regulator circuit built-in · Low VCC protection function built-in · Power-on protective function built-in. At power-on, the output is fixed to "Low" until the VCC rises to protect the power element from mis-conduction. · Protective operation signal output It transmits the signal to the control side when any of the above protective functions are activated. 1.5±0.25 5 18.2±0.3 · Turning-on and -off driving capabilities of power element 30° The AN6721is an IC with driver which drives the IGBT of large power element and various protective functions. It is suitable for drive of IH jar rice cooker or electromagnetic cooker. 3.0±0.3 7-pin SIP Package (SIP007-P-0000 SIP007-P-0000) s Block Diagram VDD 7 VCC Regurator OUT (H) Q1 6 5V ON OFF 1 Driver 0V IN Low VCC Protector 5 OUT (L) Protection Signal Switch on Protector 3 PRT 2 Po Protector Operating Normal 4 OPEN LOW GND Q1 IGBT s Pin Name Pin No. Pin name 1 Input terminal (IN) 2 Protection operation signal output terminal (PO) 3 Power-on protection terminal (PRT) 4 GND 5 Output (L) terminal (OUT (L) 6 Output (H) terminal (OUT (H) 7 VCC s Absolute Maximum Rating (Ta=25°C) Parameter Symbol Supply voltage Note 1) Supply current Rating Unit VCC Note 2) V ICC 21 mA Power dissipation Note 2) PD 525 mW Operating ambient temperature Topr 20 to 85 °C Storage temperature Tstg 55 to 150 °C Note 1) The supply voltage value is limited by shunt regulator. Note 2) Under Ta=85°C s Electrical Characteristics (Ta=25±2°C) Parameter Symbol Condition min typ max Unit Supply current (1) ICC1 VCC=20V 2.1 3.3 4.5 mA Supply current (2) ICC2 VCC=20V 7 8.5 10 mA Regulator voltage (1) VCC (R) 1 ICC=6mA 21.3 22.7 24.1 V Regulator voltage (2) VCC (R) 2 ICC=21mA 21.4 22.8 24.2 V Low VCC protection threshold Low VCC protection threshold difference VVL V1=5V 9.5 9.9 10.3 V 0.55 0.61 0.67 V 2.5 V 0.1 0.3 V 7.1 7.7 V 0.8 0.93 V 0.8 0.93 V 22 23.5 V DVV V1=5V Low VCC protection lower limit VCC (L) V1=5V Low VCC protection upper limit VOL IO=30mA Power-On protection threshold VP V3=4V Power-On protection voltage VPRT 6.5 IPRT=30mA VCC=1V Protection operation signal output VPO IPO=0.5mA VCC=1V Output voltage (H) VOH IO=5mA Output voltage (L) VOL1 IO=100mA 0.4 0.7 V Output voltage (L) VOL2 IO=30mA 0.1 0.3 V Input voltage threshold VIL VCC=38V 1.75 2.05 2.35 V Input voltage threshold difference DVI 0.55 V 20.5 VCC=38V 0.35 0.45 Sink current peak value If RO=10 CO=18000pF 1.05 1.3 Source current peak value Ir RO=10 CO=6800pF 0.45 0.6 Fall time lag tdf RH=4.3k RL=200 0.05 0.25 0.45 µS Rise time lag tdr RH=4.3k RL=200 0.3 0.5 0.7 µS A A Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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