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AN1955 Datasheet

Part Manufacturer Description PDF Type
AN1955 Freescale Semiconductor Thermal Measurement Methodology of RF Power Amplifiers Original

AN1955

Catalog Datasheet MFG & Type PDF Document Tags

AN1955

Abstract: Power di123 . AN-1955 © 2009 National Semiconductor Corporation 300938 www.national.com AN-1955 , is typically less than 10 mVp-p. See Figure 4 and Figure 8. 3 www.national.com AN-1955 , A above by AN-1955 30093808 FIGURE 4. Minimum Output Ripple Configuration where VFB is , AN-1955 30093809 FIGURE 5. Complete Evaluation Board Schematic (As Supplied) Bill of , www.national.com AN-1955 Circuit Performance 30093810 FIGURE 6. Efficiency vs Load Current 30093811
National Semiconductor
Original
LM5009AEVAL LM5009A Power di123 LM5009AMM GRM31CR72A105KA01 GRM31CR72A105KA01L
Abstract: User's Guide SNVA392A â'" June 2009 â'" Revised April 2013 AN-1955 LM5009A Evaluation Board , Documentation Feedback AN-1955 LM5009A Evaluation Board Copyright © 2009â'"2013, Texas Instruments , the most economical solution. The circuit is shown in Figure 2 and Figure 8. 2 AN-1955 LM5009A , '" June 2009 â'" Revised April 2013 Submit Documentation Feedback AN-1955 LM5009A Evaluation Board , VFB = 2.5V. A standard value 715 kâ"¦ resistor is used. 4 AN-1955 LM5009A Evaluation Board Texas Instruments
Original
ISO/TS16949

AN1955

Abstract: AN1955 rf integrated circuit Freescale Semiconductor Application Note AN1955 Rev. 0, 1/2004 Thermal Measurement , Thermocouple AN1955 1 #4-40 Stainless Cap Screws Die Temperature (TJ) Measured with IR Microscope , measured by the IR scan and AN1955 2 RF Application Information Freescale Semiconductor used in , . REFERENCES AN1955 RF Application Information Freescale Semiconductor 3 Appendix: Coating , RF Devices," Proceedings of IEEE MTT - S International Microwave Symposium, May 2001. AN1955 4
Freescale Semiconductor
Original
AN1955 rf integrated circuit

AN1955

Abstract: dupont delrin by AN1955/D AN1955 Thermal Measurement Methodology of RF Power Amplifiers Prepared by: Mali , : www.freescale.com 1 Freescale Semiconductor, Inc. AN1955 #4-40 Stainless Cap Screws Die Temperature , DATA AN1955 power amplifiers. Integral to this measurement methodology are: · Using infrared , Semiconductor, Inc. AN1955 Appendix: Coating Methodology for Infrared Thermal Measurement of RF Power , For More Information On This Product, APPLICATION INFORMATION AN1955/D Go to: www.freescale.com
Motorola
Original
dupont delrin infrared temperature measure Motorola Microwave power Transistor EMISSIVITY AN1955/D

RC0402JR-071K21L

Abstract: Freescale Kinetis Value (3) 92 Unit C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale , your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Freescale Semiconductor
Original
MMA25312BT1 RC0402JR-071K21L Freescale Kinetis 1210 QFN JESD A114 22A115 MMA25312B

RC0402JR-071K20L

Abstract: MMZ25332B . Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2012. All , following documents, software and tools to aid your design process. Application Notes · AN1955: Thermal
Freescale Semiconductor
Original
MMZ25332B RC0402JR-071K20L GRM155R61A105KE15 04023J1R8BBS YAGEO CAPACITOR MMZ25332BT1
Abstract: . FIGURE 13. FIGURE 14. FIGURE 15. June 17, 2015 AN1955.0 Point of Load Monitoring Design Idea . . . , 23 Submit Document Feedback 2 AN1955.0 June 17, 2015 Application Note 1955 , error: , . Equation 1 on page 4 shows the formula used to calculate Rshunt. AN1955.0 June 17, 2015 Application , CURRENT DRIVE CAPABILITY AN1955.0 June 17, 2015 Application Note 1955 The digital-to-analog Intersil
Original
ISL28022 ISL28023 ISL28025 ZL9025 ISL8272M ZL9006

AN1955

Abstract: MRF7P20040H . 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/ Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All , Documentation/ Application Notes - AN1955. 3. Each side of device measured separately. 4. Part internally , Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955 , process. Application Notes · AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering
Freescale Semiconductor
Original
MRF7P20040H J1311 j182 semiconductor J1240 A114 A115 MRF7P20040HR3 MRF7P20040HSR3
Abstract: MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ï , process. Application Notes ï'· AN1955: Thermal Measurement Methodology of RF Power Amplifiers Freescale Semiconductor
Original
MHT1000H MHT1000HR5 NI-880H-2L

Z25 transistor

Abstract: - AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings , /Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement , resources to aid your design process. Application Notes ï'· AN1955: Thermal Measurement Methodology of RF
Freescale Semiconductor
Original
Z25 transistor MHT1001H MHT1001HR5 NI-1230H-4S

AN1955

Abstract: j1303 . 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/ Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All , to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/ Application Notes - AN1955. 3. Side A and Side B are tied together for this , process. Application Notes · AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering
Freescale Semiconductor
Original
j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA J-052 MRF7P20040
Abstract: ) Unit R#24;JC 16 #23;C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. #25; , tools to aid your design process. Application Notes #22; AN1955: Thermal Measurement Methodology of RF Freescale Semiconductor
Original

M38151

Abstract: system. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.  Freescale Semiconductor, Inc., 2014 , design process. Application Notes ï'· AN1955: Thermal Measurement Methodology of RF Power Amplifiers ï
Freescale Semiconductor
Original
M38151 MMG38151B MMG38151BT1

MW6IC2420N

Abstract: AN1955 /Application Notes - AN1955. (continued) MW6IC2420NBR1 2 RF Device Data Freescale Semiconductor , 10 dB Adjacent Channel Power Ratio Input Return Loss 1. Refer to AN1955, Thermal , Power RF Devices in Plastic Packages · AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Freescale Semiconductor
Original
MW6IC2420N MW6IC2420NB A113 AN1977 C101 JESD22
Abstract: Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. , '¢ AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table Freescale Semiconductor
Original
MRF18085A MRF18085ALSR3
Abstract: - AN1955.  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data , /Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement , design process. Application Notes ï'· AN1955: Thermal Measurement Methodology of RF Power Amplifiers Freescale Semiconductor
Original
MMRF1011H MMRF1011HR5 MMRF1011HSR5 NI-780H-2L NI-780S-2L 7/2014S

J280

Abstract: MRF8S19140H /Application Notes - AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data , Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal , . Application Notes · AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins ·
Freescale Semiconductor
Original
MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 J280 MRF8S19140HS C1825C564J5RACTU J589 J296
Abstract: Documentation/Application Notes â' AN1955. This document contains information on a preproduction product , Vdc, 55 mA, no RF applied Symbol Value (4) Unit RθJC 77 °C/W 4. Refer to AN1955 , '¢ AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software â'¢ .s2p File Development Freescale Semiconductor
Original
MML09231H MML09231HT1

2508051107Y0

Abstract: NIPPON CAPACITORS access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. , process. Application Notes · AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering
Freescale Semiconductor
Original
MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS GRM55DR61H106KA88B NACZF331M63V MRF6P24190H
Abstract: calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The , '¢ AN1955: Thermal Measurement Methodology of RF Power Amplifiers â'¢ AN3263: Bolt Down Mounting Method for Freescale Semiconductor
Original
MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1

MML20242H

Abstract: Rogers RO4350B microstrip Temperature 95°C, 5 Vdc, 163 mA, no RF applied Symbol RJC Value (4) 40 Unit °C/W 4. Refer to AN1955 , Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2012. All rights reserved , . Application Notes · AN1955: Thermal Measurement Methodology of RF Power Amplifiers · AN3100: General Purpose
Freescale Semiconductor
Original
MML20242H Rogers RO4350B microstrip MML20242HT1
Abstract: Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement , - AN1955.  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data , to the following resources to aid your design process. Application Notes ï'· AN1955: Thermal Freescale Semiconductor
Original
MMRF1308H MMRF1308HR5 MMRF1308HSR5
Abstract: temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued , Attach Method for High Power RF Devices in Over-Molded Plastic Packages ï'· AN1955: Thermal Measurement Freescale Semiconductor
Original
MMRF1304N MMRF1304NR1 MMRF1304GNR1
Abstract: Symbol Value (4) Unit R#24;JC 40 #23;C/W 4. Refer to AN1955, Thermal Measurement Methodology , AN1955. #25; Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale , your design process. Application Notes #21; AN1955: Thermal Measurement Methodology of RF Power Freescale Semiconductor
Original

AN1955

Abstract: EB212 to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All , DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes · AN1955: Thermal Measurement Methodology
Freescale Semiconductor
Original
EB212
Abstract: frequency. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.  Freescale Semiconductor, Inc., 2014 , Notes ï'· AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software ï'· .s2p File Freescale Semiconductor
Original
MMG20241H MMG20241HT1 4/2014S

MMRF1019NR4

Abstract: . 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.  Freescale Semiconductor, Inc., 2014 , '· AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins ï'· EB212: Using
Freescale Semiconductor
Original
MMRF1019NR4 MMRF1019N

C5750JF1H226ZT

Abstract: C3225JB2A105KT - - 16 -9 dB 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The , AN1955: Thermal Measurement Methodology of RF Power Amplifiers · AN3263: Bolt Down Mounting Method for
Freescale Semiconductor
Original
C5750JF1H226ZT C3225JB2A105KT C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT w5756
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