NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AMERICAN POWER DEVICES SSE J american power devices, inc. 4b SEMICONDUCTORS 073713S 073713S 00QDQ71 00QDQ71 Tfl3 â- APD 72 1N5400-1N5408 1N5400-1N5408 3A standard recovery epoxy silicon rectifiers FEATURES • Low cost plastic package • High current operation, 3A @ T = 105°C • High surge current capability • Low forward , 592-0677 AMERICAN POWER DEVICES SIE D 0737135 Q00Q07S Q00Q07S "JIT â- APD SEMICONDUCTORS american power devices« inc. 1N5400-1N5408 1N5400-1N5408 mo 70 50 30 120 z e § io u o S 70 5 te S 50 M a o tu ï 3.0 t- z ... | OCR Scan |
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1N5400 1N5400-1N5408 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N54001 AMERICAN POWER DEVICES 073713S 00QDQ71 073713S abstract |
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| Abstract: AMERICAN POIilER DEVICES STE D SEMICONDUCTORS american power devices, inc. â-¡ 73713S 73713S â-¡â-¡â-¡â-¡â-¡53 , I ! I I ! Tt, LUC tempcnture (*C) 3/f ' trorr Body Figure 2 POWER DERATING 69 bennet street. Ivnn. ma 01905-3067 • tel.: 617 592-6090 • fax: 617 592-0677 AMERICAN POWER DEVICES SIE D SEMICONDUCTORS american power devices! Inc. â-¡ 737135 OQOaaSH ITH â- APD 1N6082B-1N6091B 1N6082B-1N6091B Standard tolerances , • Junction Temperature -65°C to + 175°C • Storage Temperature -65°C to + 200°C â- DC Power ... | OCR Scan |
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C 6090 zener features 1N6082B 1N6083B 1N6084B 1N6085B 1N6086B 1N6087B 1N6088B AMERICAN POWER DEVICES 73713S D7V/-09 1N6082B-1N6091B 73713S abstract |
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| Abstract: american power devices A Fenwal Electronics, Inc. Company AMERICAN POWER DEVICES 23E D 0737135 GGÜ0030 & ZENER DIODES MELF PACKAGED THHi k * * ZENER DIODES: A summary These are devices with sharp reverse breakdown regions. They are designed to be operated at their breakdown voltage as constant , 0.063 0.098 0.016 Max. 0.146 0.067 0.102 0.022 4340 B-09, american power devices A Fenwal , circuits, most commonly in power supplies, and in clipping, shunting and coupling applications. 17 VOLT t' ... | OCR Scan |
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LL34 AMERICAN POWER DEVICES 5252 diode zener diode in 5229 b zener IN 5232 datasheet abstract |
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| Abstract: AMERICAN POWER DEVICES SIE D 0737135 OGOOObfcj bib m SEMICONDUCTORS american power devices, Inc. APD200 APD200, APD300 APD300, APD400 APD400 AP4156 AP4156 - AP4157 AP4157, AP5179 AP5179 Stabistor diodes - high speed, multi-pellet , 175°C • DC Power Dissipation: 400mW @ TL = 30° • Derate above 25°C: 2.67mW/°C FEATURES • Voltages , temperature response [mv/°c] over their ambient temperature range. These devices are ideal in such , , meter protectors, bias regulators, low power clipping, level shifting, voltage regulation, temperature ... | OCR Scan |
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APD300 APD200 AP5179 AP4157 AMERICAN POWER DEVICES AP4156 kd 617 APD400 APD200 abstract |
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| Abstract: AMERICAN POWER DEVICES S^E T> â-¡ 73713S 73713S DDDDDMb ÛEfl SEMICONDUCTORS american power devices, inc. 1N5518B-1N5546B 1N5518B-1N5546B Standard tolerances are 5% 20%, 10%, 2% and 1% are available 400 mW low noise , 592-6090 • fax: 617 592-0677 AMERICAN POWER DEVICES STE T> SEMICONDUCTORS american power devices , -656C -656C to + 200°C • DC Power Dissipation: 400mW @T,= 50°C • Derate above 50°C: 3.2mW/°C • Forward , 160 110 20D Tl, LEAD TEMPERATURE ("CI Figura 5 POWER DERATING 69 bennett street, lynn, ma 01905-3067 ... | OCR Scan |
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1N5518B 1N5518B-1N5546B 1N5520B 1N5521B 1N5527B DO35 1N5532B diode zener ZL 27 n553 1N5521B JANTXV zener diode si 18 73713S 73713S abstract |
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| Abstract: AMERICAN POLIER DEVICES S^E ]> â-¡ 737135 GG00D51 GG00D51 1ÃŒS â- APD-//-" SEMICONDUCTORS american power devices, inc. 1N5987A-1N6025A 1N5987A-1N6025A Standard tolerances are 10% 20%, 2% & 1 % are available 500 mW industrial , 69 bennet street, Ivnn, ma 01905 AMERICAN POWER DEVICES SEMICONDUCTORS american power devices , Power Dissipation: 500mW @ Tt , K IM HO 1; l(à DT|tWf»4Tu»l«*Ci Figur« 2 POWER DERATING is HU7 I SINKS T" s s s ... | OCR Scan |
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1N5988A 1N5989A 1N5990A 1N5992A 1N5993A 1N5995A 1N5996A in5991a IN60-1 IN6002 1N5987A MAX 8997 GG00D51 1N5987A-1N6025A GG00D51 abstract |
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| Abstract: AMERICAN POWER DEVICES S^E D Afc American - power devicesj inc. SEMICONDUCTORS 0737135 , ITS ZD0 "i tu£'lf.TTEWPrt.i7L»fi£ '«CJ Figure 2 POWER DERATING 69 bennett street, lynn, ma 01905-3067 • tel.: 617 592-6090 • fax: 617 592-0677 AMERICAN POWER DEVICES STE D Ãœ73713S 73713S 0000030 7S1 â- APD 4k SEMICONDUCTORS american power devices, inc. 1N746A-1N759A 1N746A-1N759A 1N4370A-1N4372A 1N4370A-1N4372A Standard tolerances , Temperature: -65°C to +200°C • DC Power Dissipation: 500mW @ TL= 50"C • Derate above 50°C: 3.33 mW/°C • ... | OCR Scan |
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U737 1N4371 1N4372 1N746A-1 1N746A-1N759A 1N747 1N748 1N759A-1 7S1 zener diode 1N4370 DGG37 1N4370A-1N4372A DGG37 abstract |
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| Abstract: AMERICAN POWER DEVICES 5TE D 0737135 GGQ0Ãœ3T blô â- APD T-tl- , tel.: 617 592-6090 • fax: 617 592-0677 AMERICAN POWER DEVICES S-ÃŒE » â- 073713S 073713S G0GD04D G0GD04D 3GT «APD SEMICONDUCTORS power devices, inc. 1N4614-1N4627 1N4614-1N4627 and 1N4099-1N4135 1N4099-1N4135 Figura 3 NOISE DENSITY MEASUREMENT CIRCUIT , Storage Temperature: -65°C to +200°C • DC Power Dissipation: 400 mW • Derate above 75°C: 32 mW/°C • ... | OCR Scan |
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D313 iran zener in 4560 1N4614 1N4615 1N4616 1N4617 1N4618 1N4619 zener diode si 18 D313 E Zener Diode White noise 1N4614-1N4627 1N4099-1N4135 1N4614-1N4627 abstract |
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| Abstract: street. Ivnn. ma 01905-3067 • tel.: 617 592-6090 • fax: 617 592-0677 AMERICAN POWER DEVICES 5ÃŒE T> americani power devices, inc. â-¡ 737135 000005e] Mflb I APD SEMICONDUCTORS 1N935-1N938 1N935-1N938 1N935A-1N938A 1N935A-1N938A , AMERICAN POWER SEVICES SIE D â- G73713S G73713S OOOOOSfl S4T â- APD 4k SEMICONDUCTORS american power devices, inc. 1N935-1N938 1N935-1N938 1N935A-1N938A 1N935A-1N938A 1N935B-1N938B 1N935B-1N938B 500 mW temperature compensated zener reference , • DC Power Dissipation: 500mW @ TL ... | OCR Scan |
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1N936 1N935B 1N935A AMERICAN POWER DEVICES 1N938 AMERICAN POWER DEVICES 1n936 1N935-1N938 1N9358 G73713S 1N935A-1N938A 1N935B-1N938B G73713S abstract |
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| Abstract: AMERICAN POWER DEVICES S1E ]> 0737135 QOGQOHfl bTG â- APP7^/i- SEMICONDUCTORS american power devices, Inc. 1N5728B-1N5757B 1N5728B-1N5757B Standard tolerances are 5% 20%, 10%, 2% 4 1 % are available 400 mW industrial/commercial silicon zener diodes FEATURES • Zener voltage 4.7 to 75 Volts • Hermetically sealed , +200°C • DC Power Dissipation: 400mW, T , » » n i» m im ut no T[_. LMd umperature {"C) 3/B" Iron) My Figure 2 POWER DERATING 69 ... | OCR Scan |
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1N5737B 1N5736B 1N5735B 1N5734B 1N5733B 1N5730B 1N5728B 1N5728B-1N5757B 1N5728B-1N5757B abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| /03; Silicon Bi-directional Trigger Device General info Silicon bidirectional trigger device in a glass envelope intended for use in triac and device Independent registers for A and B buses Multiplexed real-time and stored data Output capability: +64mA/-32mA Power-up 3-state Power-up reset Live insertion/extraction permitted Latch -directional Trigger Device 1-2-1996 Product Specification 3.0 16.4 Products and packages www.datasheetarchive.com/files/philips/pip/br100-03_1-v2.html |
Philips | 15/06/2005 | 5.05 Kb | HTML | br100-03_1-v2.html |
| New TI RF Device Minimizes Power Requirements and Costs in Mobile Phones with North American New TI RF Device Minimizes Power Requirements and Costs in Mobile Phones with North American Footprint take advantage of lower power consumption in their designs. First, the device features a high degree brings power-down current to less than 2 mA. The device's three-wire serial interface allows for ease of design flexibility they need to increase system power efficiency for longer talk and standby times, as www.datasheetarchive.com/files/texas-instruments/data/sc/docs/news/1998/98054a.htm |
Texas Instruments | 08/02/1999 | 8.12 Kb | HTM | 98054a.htm |
| TDA1560Q TDA1560Q TDA1560Q TDA1560Q 40 W car radio high power amplifier The TDA1560Q TDA1560Q TDA1560Q TDA1560Q is an integrated Bridge-Tied Load (BTL) class-H high power amplifier. In a load of 8 W , the output power is 40 W typical at a THD of 10%. The encapsulation is a 17-lead DIL-bent-SIL plastic power package. The device is primarily developed for car radio applications. Very high output power Low power dissipation when used for music signals Switches to low output www.datasheetarchive.com/files/philips/pip/tda1560q_4-v1.html |
Philips | 14/02/2002 | 6.65 Kb | HTML | tda1560q_4-v1.html |
| BUK9120-48TC BUK9120-48TC BUK9120-48TC BUK9120-48TC; PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes General info Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ?trench? technology the device features very low on . Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended Sensing using TrenchPLUS devices 2002-04-22 Datasheet Typenumber Title www.datasheetarchive.com/files/philips/pip/buk9120-48tc_3-v2.html |
Philips | 15/06/2005 | 4.42 Kb | HTML | buk9120-48tc_3-v2.html |
| ; bent to DIL) plastic power package. The device contains 2 amplifiers in a Bridge-Tied Load configuration (BTL). The output power is 2 x 25W in a 4 Ohm load or 2 x 40 W in a 2 Ohm load. It has a differential input stage and 2 diagnostic outputs. The device is primarily developed for car radio TDA8566Q TDA8566Q TDA8566Q TDA8566Q 2 x 40 W/2 Ohm stereo BTL car radio power amplifier with differential inputs power 4 and 2 Ohm load driving capability Low offset voltage at output Fixed gain Diagnostic www.datasheetarchive.com/files/philips/pip/tda8566q_5-v1.html |
Philips | 14/02/2002 | 7.94 Kb | HTML | tda8566q_5-v1.html |
| TDA1563Q TDA1563Q TDA1563Q TDA1563Q 2 x 25 W high efficiency car radio power amplifier The TDA1563Q TDA1563Q TDA1563Q TDA1563Q is a monolithic power amplifier in a 17-lead DIL-bent-SIL plastic power package. It a higher output voltage swing is needed. The device is primarily developed for car radio ground, to supply voltage and across load Loudspeaker protection circuit Device switches to SE differential inputs Amplifiers/power boosters Amplifiers/power boosters differential inputs www.datasheetarchive.com/files/philips/pip/tda1563q_2.html |
Philips | 14/02/2002 | 6.8 Kb | HTML | tda1563q_2.html |
| radio high power amplifier General info The TDA1560Q TDA1560Q TDA1560Q TDA1560Q is an integrated Bridge-Tied Load (BTL) class-H high power amplifier. In a load of 8 W , the output power is 40 W typical at a THD of 10%. The encapsulation is a 17-lead DIL-bent-SIL plastic power package. The device is primarily developed for car radio applications. Features Very high output power Low power dissipation when used for music signals Switches to low output power in the event of excessive heatsink temperatures Requires few external www.datasheetarchive.com/files/philips/pip/tda1560q_4.html |
Philips | 23/04/2003 | 2.95 Kb | HTML | tda1560q_4.html |
| 1560Q 1560Q 1560Q 1560Q; 40 W car radio high power amplifier General info The TDA1560Q TDA1560Q TDA1560Q TDA1560Q is an integrated Bridge-Tied Load (BTL) class-H high power amplifier. In a load of 8 W , the output power is 40 W typical at a THD of 10%. The encapsulation is a 17-lead DIL-bent-SIL plastic power package. The device is primarily developed for car radio applications. Features Very high output power Low power dissipation when used for music signals Switches to www.datasheetarchive.com/files/philips/pip/tda1560q_4-v2.html |
Philips | 15/06/2005 | 4.4 Kb | HTML | tda1560q_4-v2.html |
| _1 PCF5078 PCF5078 PCF5078 PCF5078 Power amplifier controller for GSM and PCN systems This CMOS device integrates an amplifier for the detected RF voltage from the sensor, an integrator components. Compatible with baseband interface family PCF5073x Two power sensor inputs Temperature compensation of sensor signal Active filter for DAC input Power Amplifier components Applicable for a wide range of silicon and GaAs power amplifiers www.datasheetarchive.com/files/philips/pip/pcf5078_1-v1.html |
Philips | 14/02/2002 | 7.61 Kb | HTML | pcf5078_1-v1.html |
| 13007; Silicon Diffused Power Transistor General info The PHE13007 PHE13007 PHE13007 PHE13007 is a silicon npn power switching transistor in the TO220AB envelope Diffused Power Transistor 1-3-1999 Product Specification 7.0 58.2 Products and packages Typenumber North American Typenumber Order Code (12nc) Leadfree Status Marking Packing Specific Package Device Status Chemical Content www.datasheetarchive.com/files/philips/pip/phe13007_1-v2.html |
Philips | 15/06/2005 | 3.76 Kb | HTML | phe13007_1-v2.html |