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AM81214-060 Datasheet

Part Manufacturer Description PDF Type
AM81214-060 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original
AM81214-060 STMicroelectronics RF & Microwave Transistor L-Band Radar Applications Original
AM81214-060 STMicroelectronics L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original
AM81214-060 STMicroelectronics RF & Microwave Components Data Book 1993 Scan

AM81214-060

Catalog Datasheet MFG & Type PDF Document Tags

AM81214-060

Abstract: S042 AM81214-060 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS , .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 DESCRIPTION BRANDING 81214-60 PIN CONNECTION The AM81214-060 device is a high power transistor specifically designed for , ensure high reliability and product consistency. The AM81214-060 is supplied in the AMPACTM Hermetic , Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-060
STMicroelectronics
Original
S042

AM81214-060

Abstract: S042 AM81214-060 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS , .400 x .400 2NLFL (S042) hermetically sealed s) t( ORDER CODE AM81214-060 DESCRIPTION BRANDING 81214-60 uc d ro P PIN CONNECTION The AM81214-060 device is a high power transistor , AM81214-060 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output , Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-060
STMicroelectronics
Original

AM81214-060

Abstract: S042 AM81214-060 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS , .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 DESCRIPTION BRANDING 81214-60 PIN CONNECTION The AM81214-060 device is a high power transistor specifically designed for , ensure high reliability and product consistency. The AM81214-060 is supplied in the AMPACTM Hermetic , Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-060
STMicroelectronics
Original

AM81214-060

Abstract: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI AM81214-060 is Designed for 1200 ­ 1400 MHz, L-Band Applications. FEATURES: · Internal Input/Output Matching Network · PG = 6.6 dB at 55 W/1400 MHz · OmnigoldTM Metalization System MAXIMUM RATINGS IC 5.0 A VCC 32 V PDISS 107 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C JC 1.4 °C/W CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS
Advanced Semiconductor
Original
Abstract:   7^5^237 1/6 OObSOfc.1 123 â  AM81214-060 E L E C T R IC A L S P E C IF IC A T IO N S , D uty C y c le 10% = 2/6 7T2T237 £ = 7 SCSâ'™THO M SO N DObSObB flbT AM81214-060 , O N ^ 7 /. M « [iy iO T M g § 7 ^ 2 3 7 00bSDb3 7Tb â  AM81214-060 IM P E D A N C -
OCR Scan
1400M M81214-060

AM81214-060

Abstract: transistor a 726 AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 ­ 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I · Internal Input/Output Matching Network · PG = 6.6 dB at 55 W/1400 MHz · OmnigoldTM Metalization System M J K L R N P MAXIMUM DIM PDISS 107 W @ TC = 25 °C .286 / 7.26 .110 / 2.79 .130 / 3.30 F 32 V .120
Advanced Semiconductor
Original
transistor a 726

PH0912-35

Abstract: PH3135-5M June 1999 ST CROSS REFERENCE WITH MACOM INDUSTRY PART NUMBER DU2805S DU2810S DU2820S DU2840S DU28200M FH2164 PH0810-4 PH0810-15 PH0810-35 PH0810-60A PH0810-60B PH0810-75 PH0810-150 PH0912-35 PH0912-120 PH0912-150 PH1090-350L PH1090-400S PH1090-550S PH1214-55EL ST REPLACEMENT PREFERENCE SD2900 SD2902 SD2904 SD2904 SD2908 SD2903 SD1398 SD1423 SD4017 SD4701 SD4701 SD4575 SD4590 AM80912-030 AM0912-150 AM0912-150 AM1011-300 SD1541-09 SD1542-04 AM81214-060 INDUSTRY
STMicroelectronics
Original
PH1214-6M PH2729-110M PH3135-5M MACOM CROSS CROSS MACOM SD1542 DU28200 PH1214-4M PH1214-12M PH1214-25M PH1214-220M PH1600-7

AM1214-100

Abstract: AM1214-175 -030 1215-1400 26 5.0 7.2 40 28 2.4 1000 10 S064 AM81214-060 1215-1400 55
STMicroelectronics
Original
AM80814-005 AM80814-025 AM1214-300 AM81214-006 AM81214-015 AM81214-030 AM1214-100 AM1214-175 AM1214-200 M239 AM1214-325

MRF648

Abstract: TPV3100 -030 AM0912-150 AM0912-150 AM1011-300 SD1541-09 SD1542-04 AM81214-060 AM81214-006 AM81214-006 AM81214 , -175 AM1214-200 AM1214-250 AM1214-250 AM81214-030 AM81214-060 SD1398 SD1398 SD1398 SD1423 SD1423
STMicroelectronics
Original
2SC2894 2SC2897 2SC635 2SC831 SD1470 TP3006 MRF648 TPV3100 macom TP3034 SD1393 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439

"Phase Discriminator"

Abstract: Hewlett-Packard transistor microwave mentioned above) was performed on more than 1,000 L-band power transistors (AM81214-060), in an effort to , figure 3. Figure 3: Photomicrograph of 60W Pulsed L-band Transistor (AM81214-060) EMITTER LEAD , Phase Length vs. Collector Shunt Wire Separation for a Typical Production L-band Transistor (AM81214-060
STMicroelectronics
Original
AN569 Hewlett-Packard transistor microwave AM82731-050 rf power transistor transistor study N6226982-L-0384

"Phase Discriminator"

Abstract: AM81214-060 mentioned above) was performed on more than 1,000 L-band power transistors (AM81214-060), in an effort to , figure 3. Figure 3: Photomicrograph of 60W Pulsed L-band Transistor (AM81214-060) EMITTER LEAD , Phase Length vs. Collector Shunt Wire Separation for a Typical Production L-band Transistor (AM81214-060
STMicroelectronics
Original
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT

SD1446

Abstract: SD2910 -030 AM81214-060 In development STMicroelectronics
STMicroelectronics
Original
BLF248 BLF278 BLV36 BLV100 BLV103 BLV946 SD1446 SD2910 philips blx15 BLW80 blw97 BGY916 BLF145 BLF175 BLF177 BLF242 BLF244

5S038

Abstract: s038 7.2 45 28 2.4 1000 10 S064 AM81214-060 1215-1400 55 12 6.6 50 28 1.4 1000 10 S042 AM1214
-
OCR Scan
5S038 s038 AM1214- AM1416-100 AM1416-200 AM1416-220

AN569

Abstract: coupler s-band high power L-band power transistors (AM81214-060), in an effort to link their phase characteristics to four , 60W Pulsed L-band Transistor (AM81214-060) EMITTER LEAD uc d INPUT CAPACITOR SECTION te , Separation for a Typical Production L-band Transistor (AM81214-060) 16 14 12 10 8 6 4 2 0 -2 -4
STMicroelectronics
Original
coupler s-band high power all transistor datasheet all transistor

tp2304

Abstract: TPV3100 ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12 BLU60/12 BLU99 BLU99/SL BLV10 BLV11 BLV12 BLV13 BLV20 BLV21 BLV25 BLV30 BLV31 BLV33 BLV33F BLV36 BLV57 BLV58 BLV62 BLV75-12 BLV80-28 BLV97CE BLV98CE BLV99 BLV100 BLV103 BLV193 BLV194 BLV945A
-
Original
BLW95 BLY93A TP2330 TP3024A TP9383 TP9386 tp2304 MRF2001 PT9783 PT9780 ALR100 ALR200 ALR325 AJT006 AJT015 AJT030

SO42

Abstract: STM 160-30 , Radar Freq. MHz P/N AM81214-006 AM81214-015 AM81214-030 AM81214-060 AM1214-100 AM1214
STMicroelectronics
Original
SD57045 SO42 STM 160-30 PD55003 equivalent linear amplifier 470-860 SO-10RF PD54003 PD54008 PD55003 PD55008 PD55015

SO42

Abstract: sd1393 FREQ. (MHZ) AM80814-005 AM80814-025 AM81214-006 AM81214-015 AM81214-030 AM81214-060 AM1214
STMicroelectronics
Original
Transistor amplifier SD1393 sd1393 01 sd2931 fm SD4100 m130 msop8 SD1888 PD57002 PD57006 PD57018 PD57030S PD57045S TV/900

TPV3100

Abstract: TP3024A . AM81214-030 . AM81214-006 . AM81214-060 . AM81416-006 . , S064 AM81214-030 1215-1400 26 5.0 7.2 45 28 2.4 1000 10 SO64 AM81214-060
Advanced Semiconductor
Original
HF power amplifier TPV3100 mrf4070 MRF466 mrf433 MRF492A TP2307 SD1487 SD1488 SD1489 SD1490 SD1492 SD1528-06
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