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1 - 15 of about 15 for ALD110800 |
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First line: Category CIRCUIT IDEAS DESIGNERS Schematic fet11119.0 Ultra Voltage Differential Amplifier Description This Abstract: .. U1: 1⁄4 ALD110800 U2: 1⁄4 ALD110800 U3: 1⁄4 ALD110800 U4: 1⁄4 ALD110800 U5: 1⁄4 ALD110800 U6: 1⁄4 ALD110800 RB: 17.6MOhm NOTE: ALD110900 is an equivalent dual device version of the ALD110800. .. datasheet abstract.. |
164.44 Kb |
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First line: Category Amplifiers CIRCUIT IDEAS DESIGNERS Schematic amp27007.0 Differential Amplifier Circuit using Abstract: .. U1: 1⁄4 ALD110800 U2: 3 x 1⁄4 ALD110800 3 ALD110800 connected in parallel U3: 1⁄4 ALD110800 U4: 1⁄4 ALD110800 U5: 1⁄4 ALD110800 U6: 2 x 1⁄4 ALD110800 RB: 184 KOhm. Other Related Circuit Ideas. .. datasheet abstract.. |
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First line: Category Special Circuits CIRCUIT IDEAS DESIGNERS Schematic SPCKT10002.0 0.2V Supply Voltage Nanopower Abstract: .. This is an ultra low-voltage basic inverter circuit using zero threshold ALD110800 or nanopower ALD110802 or ALD110804 EPAD MOSFETs. The basic inverter uses one of the MOSFETs in ALD110802 .. datasheet abstract.. |
119.35 Kb |
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First line: Category CIRCUIT IDEAS DESIGNERS Schematic fet11115.0 Ultra Voltage Nanopower Inverter Circuit Description Abstract: .. This is an ultra low-voltage nanopower inverter circuit using zero threshold ALD110800 or nanopower ALD110802 or ALD110804 EPAD MOSFETs. The basic inverter uses one of the MOSFETs in ALD110802 .. datasheet abstract.. |
126.71 Kb |
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First line: Category Voltage Follower CIRCUIT IDEAS DESIGNERS Schematic vf27004.0 High Input Impedance Source Abstract: .. Enhancement Mode EPAD MOSFET: 1⁄4 ALD110800; or 1⁄4 ALD110802; or 1⁄4 ALD110804. Depletion Mode EPAD MOSFET: 1⁄4 ALD114804; or 1⁄4 ALD1148013; or 1⁄4 ALD114835. Other Related Circuit Ideas. Schematic .. datasheet abstract.. |
89.92 Kb |
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First line: Category Oscillators CIRCUIT IDEAS DESIGNERS Schematic osc42009.0 Colpitts Oscillator operates 0.5V Single Abstract: .. EPAD MOSFETs: M1 ALD110800 dual MOSFET connected in parallel ; M2 1⁄2 ALD114904 CL1=10pF; CL2 = 39pF; L1 = 1mH; RF= 5.6MOhm; RL= 6 Ohm; RD= 20KOhm; ROUT = 2.4KOhm. Other Related Circuit Ideas. Schematic .. datasheet abstract.. |
127.58 Kb |
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First line: Category Current Source CIRCUIT IDEAS DESIGNERS Schematic cs11008.0 High Output Impedance Current Abstract: .. Use very low VGS TH devices such as ALD110802 and ALD110800 to reduce the lower voltage compliance limit. Recommended Components. 1⁄2 ALD1108E + 1⁄2 ALD1106, ALD110902 + ALD1116, 2 x ALD1102 .. datasheet abstract.. |
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First line: Category Current Source CIRCUIT IDEAS DESIGNERS Schematic cs11007.0 High Output Impedance Current Abstract: .. Use very low VGS TH devices such as ALD110802 and ALD110800 to reduce the lower voltage compliance limit. Recommended Components. ALD110902 + ALD1116, 2 x ALD1102, 1⁄2 ALD1103 + ALD1102. Other .. datasheet abstract.. |
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First line: Category Special Circuits CIRCUIT IDEAS DESIGNERS Schematic SPCKT10003.0 0.2V Supply Voltage Nanopower Abstract: .. EPAD MOSFETs: 2x 1⁄4 ALD110800 with R=22K; or 2x 1⁄4 ALD110802 with R= 1.2 MOhm; or 2x 1⁄4 ALD110804 with R= 44 Mohm. Other Related Circuit Ideas. Schematic no. SPCKT_10002.0 0.2V Supply Voltage .. datasheet abstract.. |
136.09 Kb |
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First line: Category Oscillators CIRCUIT IDEAS DESIGNERS Schematic osc42007.0 0.5V Crystal Oscillator Circuit with Abstract: .. EPAD MOSFETs: M1 ALD110800/ ALD110900 single or dual MOSFET connected in parallel ; M2, M3: 1⁄2 ALD114904; CL1=10pF; CL2 = 22pF; RF= 5.6MOhm; RL= 6 Ohm; ROUT = 2.4KOhm. Other Related Circuit Ideas .. datasheet abstract.. |
118.16 Kb |
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First line: Category Oscillators CIRCUIT IDEAS DESIGNERS Schematic osc42002.0 Oscillation Circuit Description This simple Abstract: .. ALD1105, ALD1106, ALD110800, ALD110802. Other Related Circuit Ideas. Schematic no. osc_42004.0 Wien Bridge Oscillator Rail-to-Rail Sine Wave Generator. .. datasheet abstract.. |
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First line: Category CIRCUIT IDEAS DESIGNERS Schematic fet11123.0 Voltage Micropower Colpitts Oscillator Circuit with Abstract: .. EPAD MOSFETs: M1, M3 ALD110800 either single or dual MOSFET connected in parallel ; Active Load: M2 1⁄2 ALD114904 CL1=10pF; CL2 = 39pF; L1 = 1mH; RF= 5.6MOhm; RL= 6 Ohm; ROUT = 2.4KOhm. Other Related .. datasheet abstract.. |
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First line: Category CIRCUIT IDEAS DESIGNERS Schematic fet11121.0 Ultra Voltage Crystal Oscillator Circuit using Abstract: .. EPAD MOSFETs: M1, M3 ALD110800 either single or dual MOSFET connected in parallel ; Active Load: M2 1⁄2 ALD114904 CL1=10pF; CL2 = 22pF; RF= 5.6MOhm; RL= 6 Ohm; ROUT = 2.4KOhm. Other Related Circuit .. datasheet abstract.. |
114.87 Kb |
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First line: Category CIRCUIT IDEAS DESIGNERS Schematic fet11116.0 Ultra voltage Nanopower Two-Input NAND gates Abstract: .. EPAD MOSFETs: 2x 1⁄4 ALD110800 with R=22K; or 2x 1⁄4 ALD110802 with R= 1.2 MOhm; or 2x 1⁄4 ALD110804 with R= 44 MOhm. Other Related Circuit Ideas. Schematic no. fet_11115.0 Ultra Low Voltage Nanopower .. datasheet abstract.. |
136.68 Kb |
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First line: ADVANCED LINEAR DEVICES INC. ALD110800 / ALD110900 / ALD1108XX / ALD1109XX / ALD1148XX / ALD1149XX PERFORMANCE CHARACTERISTICS EPAD MATCHED PAIR MOSFET Abstract: .. ALD110800/ALD110900/ ALD1108XX/ALD1109XX/ALD1148XX/ALD1149XX. PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET ARRAYS. GENERAL DESCRIPTION. ALD1108xx/ALD1109xx/ALD1148xx .. datasheet abstract.. |
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