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Part Manufacturer Description Datasheet BUY
HS7B-1115RH-Q Intersil Corporation HS7B-1115RH-Q visit Intersil
AFE1115E Texas Instruments DATACOM, DIGITAL SLIC, PDSO56 visit Texas Instruments
74AC11157DW Texas Instruments Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 20-SOIC -40 to 85 visit Texas Instruments
74ACT11151D Texas Instruments 8-Line To 1-Line Data Selectors/Multiplexers 16-SOIC -40 to 85 visit Texas Instruments
74ACT11158DWR Texas Instruments Quad 2-Line to 1-Line Data Selectors/Multiplexers 20-SOIC -40 to 85 visit Texas Instruments
74AC11158DW Texas Instruments Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 20-SOIC -40 to 85 visit Texas Instruments

AL 1115 CV

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1115 2N5875/6/7/8 j p THERMAL DATA â'" 6 7qgqg37 D O aq B b S T â  S-THOMSON " jI ^ - U 3DE Rth i-case | Therm al Resistance Junction-case Max | " D 1.17 | °C/W , (s* t) (V) s ii 41 4 ! ' | ^ F E : 10 i 1 CV) . â'" 1 I 1 ! 6 8 t0 -
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2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876

al 1115 cv

Abstract: ot 409 » * IV Cg o» (N 00 >o *> 4 IV N N IV N N IV IV IV iy to to to Cv 4 rv («1 Ol Ov >a «» o o *« * 0 | CK >3 CO "0 © E D -52044-*10 ± 0.3 Al r , 23.4 22.16 20.9 n .65 te.4 11.15 15.9 14-66 13.4 12.15 10 .9 9.66 8.4 1.15 *r » MATERIAL 5 3 .4
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al 1115 cv ot 409 EN--01

AL 1115 CV

Abstract: entire common mode range al lows the unused devices on the bus to be powered down Combined impedance of , * 0.6 0 10 20 30 40 50 60 70 l^-OUTPUT L O WCU RREN T-m A 14 Vcr-POW EB SU PPLY V 0LTA G C-V , Voe-P0WEB SUPPLY VOLTAGt-V T L /H /1 0 4 0 6 -1 7 1-115 DS3695/DS3695T/DS3696/DS3696T/DS3697/DS3698
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RS485/RS422 DS3695 DS3696 DS3697 DS3698 RS485

B712 transistor

Abstract: M8712 ottky T T L process perm its m inim al ch ip size and fast access tim e. The extra test cells and unique , a t n orm al precau tio n s be taken t o avoid ap p lic a tio n o f any voltage higher than m a x i , 60 c III Fig.15 - tots DISABLE TIME vs A M B IE N T TEMPERATURE 50 40 V C(:= 4 .5 M) Al V c c , ) 1-115 M B 7 1 2 7 E /H _M B 7 1 2 8 E /H /Y F U J IT S U M B 7127L M B 7128L , Trailing Edge to Read Strobe Time Programming Pulse Number Programming Tim e /B it A d d itio n al
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B712 transistor M8712 transistor b712 mb7128e mb 3712 MB7128 8192-BIT MB7127E/H MB7128E/H/Y MB7127L MB7128L H1I1I1M111IIIIHI1

hst 1025 dr

Abstract: t41b mos 1-115 CONTENTS 10.5 page CONTENTS page Layout Guidelines .1-115 , . 1- 1 15 10.5.2 Crystal . 1-115 10.5.3 82595TX Analog Differential Signals .1-115 10.5.4 Decoupling C o n sid e ra tio n s.1-115 , plicated setup utilities by al lowing peripheral fu n ction s to be added to a PC au tom atically (such as , registers). The system ?ite- face block also interfaces with the 82595TX's l< .al memory in terface
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hst 1025 dr t41b mos 1NTC 82595T S1115 IC 74ALS245 application 144-L LAN595TX

BS5267

Abstract: Electrolytic Capacitors td004 characteristics being achieved; lower cost increased CV in the same can size, or reduced can size for the same CV lower ESR resulting in higher ripple current rating special print requirements All standard and , requirements of the North American market. This range offers high CV per unit volume coupled with high ripple , 74.5 87.5 100.5 112.5 125.5 137.5 151.5 85.5 98.5 111.5 124.5 136.5 149.5 98.5 111.5 124.5 136.5 149.5
BHC Components
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BS5267 Electrolytic Capacitors td004 electrolytic capacitor 33000 uf 75v BS526 BHC TD002 BHC Components ISO9001

B415

Abstract: B41560 reliability, extremely good electrical characteristics High CV product, i.e. extremely compact High ripple , 111.5 149.0 17 17 M12 M12 17.7 17.7 31.7 31.7 620 840 d2 max. a +0.2/ 0.4 , when handling Al electrolytic capacitors: Any escaping electrolyte should not come into contact with
EPCOS
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B41560 B41580 B415

A5568M00

Abstract: A5338M00 Frequency converters Professional power supplies Uninterruptible power supplies Features High CV product , 91.0 +0/2 144.5 221.0 87.2 112.2 112.2 111.5 149.0 226.5 149.8 226.3 17 17 17 17 17 17 17 17 M12 M12 , , the following rules should be observed when handling Al electrolytic capacitors: Any escaping
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B43456 A5568M00 A5338M00 epcos b43458 din 6797 B43458
Abstract: Frequency converters Professional power supplies Uninterruptible power supplies Features High CV product , 105.7 76.9 +0/0.7 143.2 76.9 +0/0.7 220.7 91.0 +0/2 91.0 +0/2 144.5 221.0 87.2 112.2 112.2 111.5 149.0 , , the following rules should be observed when handling Al electrolytic capacitors: Any escaping EPCOS
Original

B43458

Abstract: B43456 supplies Features High CV product, i.e. extremely compact High reliability and high ripple current , 118.2 143.2 168.7 190.7 220.7 111.5 124.0 149.0 174.5 196.5 226.5 17 17 17 17 17 17 , following rules should be observed when handling Al electrolytic capacitors: Any escaping electrolyte
EPCOS
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epcos A9478 A9228
Abstract: Frequency converters Professional power supplies Uninterruptible power supplies Features High CV product , 105.7 76.9 +0/0.7 143.2 76.9 +0/0.7 220.7 91.0 +0/2 91.0 +0/2 144.5 221.0 87.2 112.2 112.2 111.5 149.0 , , the following rules should be observed when handling Al electrolytic capacitors: Any escaping EPCOS
Original

B41560

Abstract: B41580 High reliability, extremely good electrical characteristics High CV product, i.e. extremely compact , +0/ 0.7 76.9 +0/ 0.7 105.7 143.2 111.5 149.0 17 17 M12 M12 17.7 17.7 31.7 , . Nevertheless, the following rules should be observed when handling Al electrolytic capacitors: Any escaping
EPCOS
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din 74

NL1031

Abstract: design. R am bus D R AM user's m anual (Reference M an u al) : IEU-1401 Features · Ram bus Interface , [8:0] I/O I/O Description Sign al lines for request, w rite data, and read data packets. The , X 1115 MEC (3) Delay R egister This register specifies RD R A M program m able C A S delay , each implemented comm and is provided in "Rambus DRAM user's manual (Reference M an u al)". The , , 33 bit integer, and CV is the value of the Count[7:3] field when interpreted as an unsigned, 5 bit
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NL1031 PP48830L PD48830L IPD48830L P32G6-65A

MB7128

Abstract: BA9N ttky T T L process perm its m inim al chip size and fast access tim e. The extra test cells and unique , ) Programmed by DEAP (Diffused Eutectic A lum inum Process) 1-115 I I I I I I I I I I I I H I I I I I H , Programming Tim e /B it A dditio n al Programming Pulse Number Notes: (1) Stipulated 2 0 0 0 load and 15V. (2 , 9002013148308902012331480131 M B 7 1 2 7 E /H M B 7 1 2 8 E /H /Y M B 7127L M B 7128L PACKAGE DIMENSIONS (S u ffix: -CV
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BA9N mb7128y 7128Y MB712 B7128E/H/Y 18-LEAD DIP-18P-M02 C28002S

54123 application as pulse generator

Abstract: SVI 3003 ) Conditions ] -55°C < Tc < +125 C unless otherwise specified , 03 CC = 5.0 V; |Cv = lb pF (max); |RX = 5 kiì *S% 5/ VCC = 5.0 V; Cv = Open; cf = 50 pF *10S; " - = 5 k.Q *5ï; ' = 390Ã2 *53 igure 8 , tpi 0UT)2 |R, = 390- ±51; VCC = 5.0 V; |CL = 50 pF ±10%; t Rv = Open; |Cv = 15 pF *10S; I pin 9 , applied to all clear and A - inputs, B inputs grounded, al l outputs open, Cx = 0.02 t,F and Rx = 25 k R , Cx VCC a2 BI B2 clear GMD T «L (NOTE 4> (NOTE 3) OUTPUT 5°v RL(NOTE 4) (NOTE S) 1 unless
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54123 application as pulse generator SVI 3003 FLJ445 ANB I AD smd transistor marking 12G 31114 MIL-M-38510/12G MIL-M-38510/12F 10N0STABLE MIL-M-38510 MIL-M-38

LDR 03

Abstract: LDR05 189 DM 1G0 437 PL 5553 B 619 XP 1115 189 12 1 T 521 PL 5555 623 XP 1116 189 LDR 03 23 PL 5084 , ZP 1080 271 90 C 1 421 18 504 285 ZP 1081 275 90 CG 117 18 505 289 ZX 1000 631 90 CV 119 18 , OA 2 WA 407 150 B 2 425 18 516 3 23 OB 2 423 150 C 2 427 18 517 327 OB 2 WA 409 150 CV 129 18 , nm Vakuum 90 CV 3,0 cm2 o 20 [.\/£m 119 150 CV >5,3 ein 20 HA/Ziii 129 Gas 9 0 AG +) 9 2 AG 4.0 , , lcontaktlose Relais, galvanische S ch al tkrei s trennung usw. Aufbau und Abmessungen (in mm): Gehäuse
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LDR 03 LDR05 valvo handbuch valvo handbuch rohren ORP60 valvo 18504

MX 128 D

Abstract: 12 bits X 4 levels. The MSB is saved for CY. 4 levels are the maximum allowed for al subroutine call , timer for power on reset Initial State Hardware Program Counter CV Data Memory System Register AC Timer , -840 -840 -840 -840 -840 -840 -624 -485 -137 5 125 291 530 656 1-115 UM5225-5XXX Ordering
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MX 128 D UM6610 768KHZ 225-5XXX SEG10 1960M SEG11

PWL-6

Abstract: TTC 5200 VlC DD2 rCC 11 H 5 IL 5 tCLK tpWHS tpWHl IAddress valid to ALE (*) T I tpHL1 I AL E (4-) to , STATUS WORD Iz \7 ACCUMULATOR (6) ÃL - I B 1 AZ temp reg | (8)1 flags . * > ACCUM LAT C , device Input terminal. FIGURE 3. High voltage CV ZAp ) test circuit. 11 This Material Copyrighted By , outputs 1 2.4 1 I 2.4 1 I 1 1 V 1 1 1 â'"i- r 1 ¡VOL 1 1 1 Al 1 outputs 1 0.45 1 I 0.45 1 i i ! V 1 1 , 1105 1106 1107 1108 1109 1110 IUI 111? 1113 1114 1115 1115 1117 IIIS 1119 1120 1121 1122
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PWL-6 TTC 5200 MIL-M-38510/490A MIL-M-39510

mil-std-883 2015

Abstract: mil-std-883* 2015 . . . . . . . . . . . . . . . . . . . . . . . 11-15 11-1 Littelfuse Quality Introduction , conditions. 11-15 Littelfuse Reliability Acceleration Factors Activation Energy Acceleration , Assembly Defects 0.5eV - 0.7eV Electromigration - Al Line - Contact 0.6eV 0.9eV Temperature , processes. Contamination 1.0eV C-V stress at oxide/interconnect, wafer FAB device stress test and HTOL. Statistical Process Control of C-V data, oxide/ interconnect cleans, high integrity
Littelfuse
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mil-std-883 2015 mil-std-883* 2015 LV500 BOX BUILD FABRICATION PROCESS INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report ISO9000

NEC RDRAM

Abstract: ATA121 ven tion al system and board design m ethodologies. Low latency is attained by using the RDRAM's large , X X .X X X X .X X X X .X X xx.xx 1115 NEC (3) Delay Register This register , bit integer, and CV is the value of the Count[7:3] field when interpreted as an unsigned, 5 bit , ] wires. In the figure, "n" is either the CV value (if the transaction is allowed to complete) or the last count value (if the transaction is term inated prem aturely by the serial control packet). "CV" is the
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NEC RDRAM ATA121 R135 LN370 JIPP48830L HPD48830L P32G6-
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