NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: M58LW032C M58LW032C 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read TSOP56 TSOP56 (N) 14 x 20 mm Page Read s ACCESS TIME TBGA ... | Original |
61 pages, |
TSOP56 M58LW032C CR10 M58LW032C abstract |
|
|||
| Abstract: M58LW032A M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read TSOP56 TSOP56 (N) 14 x 20 mm Page Read s ACCESS TIME TBGA ... | Original |
61 pages, |
TSOP56 M58LW032A M58LW032 M58LW032A abstract |
|
|||
| Abstract: M58LW064D M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations s ACCESS TIME Random Read 110ns Page Mode Read 110/25ns s PROGRAMMING TIME TSOP56 TSOP56 (N) 14 x 20 mm 16 Word Write Buffer 12us Word effective programming time s 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS s ENHAN ... | Original |
51 pages, |
TSOP56 M58LW064D 2N 5551 datasheet M58LW064D abstract |
|
|||
| Abstract: M58LW064C M58LW064C 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read TSOP56 TSOP56 (N) 14 x 20 mm Page Read s ACCESS TIME TBGA ... | Original |
61 pages, |
TSOP56 M58LW064C M58LW064C abstract |
|
|||
| Abstract: M58LW032D M58LW032D 32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations s ACCESS TIME Random Read 90ns,110ns Page Mode Read 90ns/25ns, 110ns/25ns s PROGRAMMING TIME TSOP56 TSOP56 (N) 14 x 20 mm 16 Word Write Buffer 12us Word effective programming time s s TBGA 32 UNIFORM 64 KWord/128KBy ... | Original |
51 pages, |
M58LW032D A0-A21 2N 5551 datasheet TSOP56 M58LW032D abstract |
|
|||
| Abstract: M58LW032C M58LW032C 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY I I I I I I I I I I I I WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst Read Asynchronous Random Read Asynchronous Address Latch Controlled Read Page Read ACCESS TIME Synchronous Burst Read u ... | Original |
61 pages, |
TSOP56 sn 5551 M58LW032C J-STD-020B CR10 M58LW032C abstract |
|
|||
| Abstract: M58LW032D M58LW032D 32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY I I I I I I I I I I I I WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME Random Read 90ns,110ns Page Mode Read 90ns/25ns, 110ns/25ns PROGRAMMING TIME 16 Word Write Buffer 12us Word effective programming time 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY B ... | Original |
50 pages, |
TSOP56 M58LW032D J-STD-020B A0-A21 M58LW032D abstract |
|
|||
| Abstract: M58LW064C M58LW064C 64 Mbit (4Mb x 16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read Page Read ACCESS TIME Synchronous Burst Read up to 56MHz ... | Original |
61 pages, |
TSOP56 M58LW064C J-STD-020B CR10 sn 5551 M58LW064C abstract |
|
|||
| Abstract: M58LW064D M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME Random Read 110ns Page Mode Read 110/25ns PROGRAMMING TIME 16 Word Write Buffer 12us Word effective programming time 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY Block Protection/ Unprotection ... | Original |
50 pages, |
M58LW064D J-STD-020B TSOP56 M58LW064D abstract |
|
|||