AGRA10E IS-95 AGRA10EU JESD22-A114B JESD22-A115A JESD22-C101A AGR045010 - Datasheet Archive

 

February 2004 AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a

 

Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz to 472 MHz, personal cellular band IS-95 IS-95 865 MHz to 895 MHz, global system for mobile communications/ enhanced data GSM environment (GSM/EDGE) 921 MHz to 960 MHz, and power supply switching applications from 100 MHz to 1 GHz. s CW performance @ 28 V: - Output power: 10 W minimum @ P1dB. - Power gain: 22 dB. - Efficiency: 65% @ P1dB. - Return loss: ­10 dB. 921 MHz to 960 MHz s CW performance @ 26 V: - Output power: 10 W minimum @ P1dB. - Power gain: 21 dB. - Efficiency: 61% @ P1dB. - Return loss: ­10 dB. Device Features Figure 1. AGRA10EU AGRA10EU Package s High-reliability, gold-metalization process. Performance Features s Low hot carrier injection (HCI) induced bias drift over 20 years. 450 MHz to 500 MHz s High gain, efficiency, and linearity. s Integrated ESD protection. s Device can withstand a 10:1 voltage standing wave ratio (VSWR) with 10 W CW output power. s Large signal impedance parameters available. s Continuous wave (CW) performance @ 28 V: - Output power: 10 W minimum @ P1dB. - Power gain: 24 dB. - Efficiency: 64% @ P1dB. - Return loss: ­10 dB. AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGRA10E AGRA10E Sym RJC Value 4.5 Unit °C/W Sym VDSS VGS PD - TJ TSTG Value 65 ­0.5, 15 38.9 0.22 200 ­65, 150 Unit Vdc Vdc W W/°C °C °C Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGRA10E AGRA10E Derate Above 25 °C: AGRA10E AGRA10E Operating Junction Temperature Storage Temperature Range * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGRA10E AGRA10E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B JESD22-A114B (HBM), JESD22-A115A JESD22-A115A (MM), and JESD22-C101A JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Table 4. dc Characteristics (450 MHz-500 MHz, 865 MHz-895 MHz, 921 MHz-960 MHz) Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Parameter Symbol Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 25 µA) V(BR)DSS IGSS Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) GFS Gate Threshold Voltage (VDS = 10 V, ID = 43 µA) VGS(TH) Gate Quiescent Voltage (VDS = 28 V, ID = 115 mA) VGS(Q) VDS(ON) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) CRSS COSS Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) CISS 2 Min Typ Max Unit 65 - - - - - - 0.3 0.9 Vdc µAdc µAdc - - - - 0.65 3.3 3.7 0.56 - 4.2 - - S Vdc Vdc Vdc - - - 0.25 5.15 18.2 - - - pF pF pF Agere Systems Inc. Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 5. RF Characteristics (450 MHz-500 MHz) Parameter Symbol Min Typ Max Unit Functional Tests (in Agere Systems Supplied Test Fixture)1 Power Gain - 24 - dB GPS (VDS = 28 V, POUT = 3 W, IDQ = 115 mA) - 64 - % Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 115 mA) Two-Tone Linearity Characterization IM3 - TBD - dBc (POUT = 3 W, VDS = 28 V, IDQ = 115 mA) (spectrum: tones placed ±50 kHz from carrier) P1dB - 16 - W Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 115 mA) Input Return Loss IRL - ­10 - dB No degradation in output power. Ruggedness (VDS = 28 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles) 1. Across band, 450 MHz-500 MHz. Table 6. RF Characteristics (865 MHz-895 MHz) Parameter Symbol Min Typ Max Unit 1 Functional Tests (in Agere Systems Supplied Test Fixture) - 22 - dB Power Gain GPS (VDS = 28 V, POUT = 3 W, IDQ = 115 mA) - 65 - % Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 115 mA) IM3 - TBD - Third-order Intermodulation Distortion (VDS = 28 V, POUT = 3, IDQ = 115 mA) Output Power P1dB - 12 - W (VDS = 28 V, 1 dB gain compression, IDQ = 115 mA) Input Return Loss IRL - ­10 - dB No degradation in output power. Ruggedness (VDS = 28 V, POUT = 10 W, IDQ = 100 mA, VSWR = 10:1, all angles) 1. Across band, 865 MHz-895 MHz. Agere Systems Inc. 3 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 7. RF Characteristics (921 MHz-960 MHz) Parameter Symbol Min Typ Max Unit Functional Tests (in Agere Systems Supplied Test Fixture)1 Power Gain (VDS = 26 V, POUT = 3 W, IDQ = 115 mA) GPS - 21 - dB - 61 - % Modulation Spectrum @ ±400 kHz (Alt1) - - ­58 - dBc Modulation Spectrum @ ±600 kHz (Alt2) - - ­71 - dBc P1dB 10 11 - W IRL - ­10 - dB Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 115 mA) EDGE Linearity Characterization (POUT = 3 W, f = 940.5 MHz, VDS = 26 V, IDQ = 115 mA): Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 115 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles) No degradation in output power. 1. Across band, 921 MHz-960 MHz. 4 Agere Systems Inc. Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGRA10E AGRA10E (Class AB) (450 MHz-500 MHz) VDD R1 FB1 VGG L1 C8 C7 C6 C5 C4 C9 Z10 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 2 1 DUT RF INPUT C2 C10 C11 Z11 C17 3 C15 C12 C13 C14 C3 C16 Z12 C18 Z13 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic (Class AB) (450 MHz-500 MHz) C1 C2 R1 L1 C17 C15 AGR045010 AGR045010 D PAD C11 C12 C16 V3 Class AB 2003 LCP C18 C14 B1 C10 C9 C13 C3 C4 C8 C7 C6 C5 G PAD GND Parts List: s Microstrip: Z1: 50 @ 8.412°, 0.344 in. x 0.066 in. Z2: 50 @ 4.230°, 0.173 in. x 0.066 in. Z3: 33.671 @ 1.380°, 0.055 in. x 0.120 in. Z4: 33.671 @ 7.980°, 0.318 in. x 0.120 in. Z5: 33.671 @ 7.378°, 0.294 in. x 0.120 in. Z6: 17.711 @ 5.406°, 0.208 in. x 0.274 in. Z7: 12.824 @ 4.428°, 0.168 in. x 0.400 in. Z8: 12.824 @ 3.480°, 0.132 in. x 0.400 in. Z9: 12.824 @ 2.162°, 0.082 in. x 0.400 in. Z10: 22.884 @ 12.470°, 0.486 in. x 0.200 in. Z11: 50 @ 14.310°, 0.585 in. x 0.066 in. Z12: 50 @ 9.243°, 0.378 in. x 0.066 in. Z13: 50 @ 7.947°, 0.325 in. x 0.066 in. ® s ATC chip capacitor: C1, C3, C9, C18: 200 pF 100B201FW250X 100B201FW250X. C2: 33 pF 100B330W250X 100B330W250X. C16: 24 pF 100B240FW250X 100B240FW250X. C17: 4.7 pF 100B4R7BW250X 100B4R7BW250X. C4, C10: 100 pF 100B101FW250F 100B101FW250F. ® s Kemet ceramic chip capacitor: C7, C13: 1.0 µF C1812C105K5RACTR C1812C105K5RACTR. s Ceramic capacitors: C5, C11: 0.01 µF. C6, C12: 0.1 µF. ® s Johanson Giga-Trim variable capacitor: C15: 0.8 pF to 8.0 pF 27291SL 27291SL. ® s Sprague tantalum surface-mount chip capacitor: C8, C14: 22 µF, T491X226K035AS T491X226K035AS. s Chip resistor: R1: 51 KA RM73B2B510J RM73B2B510J. ® s Fair-Rite ; RF bead: FB1: 2743019446. s RF choke: L1 2 Tns, #20, 0.108 mil long, 0.088 D. ® s Taconic ORCER RF-35 RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout (Class AB) (450 MHz-500 MHz) Figure 2. AGRA10E AGRA10E Test Circuit (Class AB) (450 MHz-500 MHz) Agere Systems Inc. 5 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 Test Circuit Illustrations for AGRA10E AGRA10E (Class A) (450 MHz-500 MHz) VDD R1 FB1 VGG L1 C8 C7 C6 C5 C4 C9 Z10 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 2 1 DUT RF INPUT C2 C10 C11 C12 C13 C14 C3 Z11 C17 3 C15 C16 Z12 C18 Z13 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE C1 C2 D PAD C11 C12 L1 C17 C15 C16 AGR045010 AGR045010 V1 Class A 2003 LCP C18 C14 C4 R1 C10 C9 C13 B1 GND C3 G PAD C8 C7 C6 C5 A. Schematic (Class A) (450 MHz-500 MHz) Parts List: s Microstrip: Z1: 50 @ 8.412°, 0.344 in. x 0.066 in. Z2: 50 @ 4.230°, 0.173 in. x 0.066 in. Z3: 33.671 @ 1.380°, 0.055 in. x 0.120 in. Z4: 33.671 @ 7.730°, 0.308 in. x 0.120 in. Z5: 33.671 @ 7.630°, 0.304 in. x 0.120 in. Z6: 17.711 @ 5.406°, 0.208 in. x 0.274 in. Z7: 12.824 @ 4.218°, 0.160 in. x 0.400 in. Z8: 12.824 @ 3.690°, 0.140 in. x 0.400 in. Z9: 12.824 @ 2.162°, 0.082 in. x 0.400 in. Z10: 22.884 @ 10.931°, 0.426 in. x 0.200 in. Z11: 50 @ 9.390°, 0.384 in. x 0.066 in. Z12: 50 @ 15.626°, 0.639 in. x 0.066 in. Z13: 50 @ 7.947°, 0.325 in. x 0.066 in. ® s ATC chip capacitor: C1, C3, C9, C18: 200 pF 100B201FW250X 100B201FW250X. C2: 30 pF 100B330W250X 100B330W250X. C16: 24 pF 100B240FW250X 100B240FW250X. C4, C10: 100 pF 100B101FW250F 100B101FW250F. ® s Kemet ceramic chip capacitor: C7, C13: 1.0 µF C1812C105K5RACTR C1812C105K5RACTR. s Ceramic capacitors: C5, C11: 0.01 µF. C6, C12: 0.1 µF. ® s Johanson Giga-Trim variable capacitor: C15: 0.8 pF to 8.0 pF 27291SL 27291SL, C17: 0.6 pF to 4.5 pF 27271SL 27271SL. s Sprague® tantalum surface-mount chip capacitor: C8, C14: 22 µF, T491X226K035AC T491X226K035AC. s Chip resistor: R1: 51 KA RM73B2B510J RM73B2B510J. ® s Fair-Rite ; RF bead: FB1: 2743019446. s RF choke: L1 2 Tns, #20, 0.108 mil long, 0.088 D. ® s Taconic ORCER RF-35 RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout (Class A) (450 MHz-500 MHz) Figure 3. AGRA10E AGRA10E Test Circuit (Class A) (450 MHz-500 MHz) 6 Agere Systems Inc. Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGRA10E AGRA10E (921 MHz-960 MHz) VDD FB1 Z6 VGG Z13 C8 C7 C6 C5 C4 C3 Z7 R1 Z1 C1 Z2 Z3 Z4 Z5 2 C9 C10 Z8 C11 Z9 C17 C12 Z10 C18 C13 C14 Z11 C19 Z12 RF OUTPUT 1 DUT PINS: 1. DRAIN 2. GATE 3. SOURCE 3 RF INPUT C2 C15 C16 C13 B1 C11 C12 R1 C15 C16 C1 C17 C2 960 C18 C19 C14 C9 C10 C4 C3 C8 C7 C6 C5 A. Schematic (921 MHz-960 MHz) Parts List: s Microstrip: Z1: 0.340 in. x 0.066 in. Z2: 0.230 in. x 0.120 in. Z3: 0.640 in. x 0.120 in. Z4: 1.448 in. x 0.400 in. Z5: 0.080 in. x 0.400 in. Z6: 0.947 in. x 0.075 in. Z7: 0.037 in. x 0.200 in. Z8: 0.138 in. x 0.200 in. Z9: 0.480 in. x 0.200 in. Z10: 0.510 in. x 0.066 in. Z11: 0.225 in. x 0.066 in. Z12: 0.310 in. x 0.066 in. Z13: 1.930 in. x 0.040 in. ® s ATC chip capacitor: C1, C3, C9, C19: 47 pF 100B470JW250X 100B470JW250X. C18: 4.7 pF 100B3R9BW250X 100B3R9BW250X. C16: 0.5 pF 100B0R5FW250X 100B0R5FW250X. C15: 15 pF 100B120FW500X 100B120FW500X. C4, C10: 100 pF 100B101FW250X 100B101FW250X. ® s Kemet 1206 size chip capacitor: C7, C13: 1.0 µF C1812105K5RACTR C1812105K5RACTR. s Ceramic capacitors: C5, C11: 0.01 µF. C6, C12: 0.1 µF. ® s Johanson Giga-Trim variable capacitor: C2: 0.8 pF to 8.0 pF, C17: 0.6 pF to 4.6 pF. s 1206 size chip resistor: R1: 50 . ® s Sprague tantalum surface-mount chip capacitor: C8, C14: 22 µF, 35 V. ® s Murata 0805 size chip capacitor: C5, C11: 0.01 µF GRM40X7R103K100AL GRM40X7R103K100AL. ® s Fair-Rite ; ferrite bead: FB1: 2743019446. ® s Taconic ORCER RF-35 RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout (921 MHz-960 MHz) Figure 4. AGRA10E AGRA10E Test Circuit (921 MHz-960 MHz) Agere Systems Inc. 7 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 Typical Performance Characteristics 0.12 07 0. 45 55 0.8 1.4 0.4 EN 75 T (+ j 0.4 5 0.6 PO N 15 0 CE CO M 0.8 RE AC TA N 0 0 1. 1. 80 f3 ZS IN D 0.6 f3 f1 0.4 0.1 ZL 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 L OA D < Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 0.6 o) jB/ Y E (NC 8 0. 1. 0 0.2 TA -160 -85 V 482 (f1) 484.5 (f2) 487 (f3) WA 7 MHz (f) 0.4 0.1 -90 D OW A R HST N GT -170 EL E 0.2 0.48 0.49 0.2 f1 U CT IVE 0.2 Z0 = 100 35 8 0.0 4 0.4 6 CI PA CA TA EP SC SU E Yo) jB/ E (+ NC 0. 85 ,O o) R V TI 70 0.3 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 GEN ERA 0.48 ± 180 TO 170 RÐ 0.4 > 7 160 90 X/ Z 14 4 0. 0.0 5 0 70 0. 44 0. 06 5 65 0. 43 0. 0 13 40 0.7 0 12 0.6 60 2 0.4 0.9 110 1 0.4 0 0.15 0.35 80 1.0 0 0.14 0.36 90 50 0.4 .09 .08 0.39 100 0.37 1.2 0.1 0.13 0.38 0.11 ZS (complex source impedance) 0.174 + j0.700 0.189 + j0.711 0.205 + j0.723 GATE (2) ZS ZL (complex optimum load impedance) 0.444 + j0.219 0.441 + j0.221 0.439 + j0.223 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 5. Series Equivalent Input and Output Impedances (Class AB) (450 MHz-500 MHz) 8 Agere Systems Inc. Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0.12 07 0. 45 1.4 EN 75 T (+ j 0.4 5 PO N 15 0 CE CO M 0 1. U CT IVE 0 1. IN D ZS f3 ZL f1 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.6 0.5 0.4 0.3 0.2 0.1 0.1 f1, f2, f3 0.7 80 0.8 RE AC TA N 0.0 4 0.4 6 85 0.6 0.4 A D W A V EL E N GTH S TOW A RD 0.0 0.49 GEN ERA 0.48 ± 180 TO 170 RÐ 0.4 > 7 160 90 0.4 0.6 0.49 0.2 0.2 0.2 RD L O TOW A 7 TH S -170 EN G V EL WA -90 -160 35 8 482 (f1) 484.5 (f2) 487 (f3) CI PA CA TA EP SC SU E Yo) jB/ E (+ NC 0. MHz (f) ,O o) R V TI 70 0.3 Z0 = 50 X/ Z 14 4 0. 0.0 5 0 70 0. 44 0. 06 5 65 0. 43 0. 0 13 40 0.7 0 12 0.6 60 2 0.4 0.15 0.35 80 1.0 110 0.9 1 0.8 0.4 0 0.14 0.36 90 50 0.4 .09 55 0 .08 0.39 100 0.37 1.2 0.1 0.13 0.38 0.11 ZS (complex source impedance) 0.123 + j0.147 0.128 + j0.152 0.136 + j0.162 GATE (2) ZS ZL (complex optimum load impedance) 0.635 + j0.177 0.634 + j0.177 0.631 + j0.171 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 6. Series Equivalent Input and Output Impedances (Class A) (450 MHz-500 MHz) Agere Systems Inc. 9 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 Typical Performance Characteristics (continued) 0.12 07 0. 45 1.4 0.8 EN 75 T (+ j 0.4 5 PO N 15 0 CE CO M 0.8 0 0 1. U CT IVE 1. 80 0.6 RE AC TA N 0.0 4 0.4 6 IN D 85 0.4 f3 f3 0.1 f1 0.4 ZL 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 f1 0.3 0.2 0.1 ZS 0.2 A D W A V EL E N GTH S TOW A RD 0.0 0.49 GEN ERA 0.48 ± 180 TO 170 RÐ 0.4 > 7 160 90 0.2 RD L O TOW A 7 TH S -170 EN G V EL WA -90 -160 35 8 921 (f1) 940.5 (f2) 960 (f3) CI PA CA TA EP SC SU E Yo) jB/ E (+ NC 0. MHz (f) ,O o) R V TI 70 0.3 Z0 = 50 X/ Z 14 4 0. 0.0 5 0 70 0. 44 0. 06 5 65 0. 43 0. 0 13 40 0.7 0 12 0.6 60 2 0.4 0.9 110 1 55 0.4 0 0.15 0.35 80 1.0 0 0.14 0.36 90 50 0.4 .09 .08 0.39 100 0.37 1.2 0.1 0.13 0.38 0.11 ZS (complex source impedance) 2.01 + j4.67 2.00 + j4.73 1.61+ j4.93 GATE (2) ZS ZL (complex optimum load impedance) 14.42 + j4.55 15.38 + j5.07 17.28 + j5.71 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 7. Series Equivalent Input and Output Impedances (921 MHz-960 MHz) 10 Agere Systems Inc. Preliminary Data Sheet February 2004 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead denotes drain. AGRA10EU AGRA10EU TOP VIEW SIDE VIEW BOTTOM VIEW 0.200 R 0.020-0.040 45° 0.020 0.290 0.160 0.09 ± 0.01 0.140 0.008 ± 0.001 0.050 Agere Systems Inc. 0.180 11 AGRA10E AGRA10E 10 W, 100 MHz-1.0 GHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet February 2004 RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. Fair-Rite is a registered trademark of Fair-Rite Products Corporation. Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, FAX (852) 3129-2020 CHINA: (86) 21-5047-1212 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright © 2004 Agere Systems Inc. All Rights Reserved February 2004 DS04-096RFPP DS04-096RFPP (Replaces DS03-161RFPP DS03-161RFPP)