ACS02MS MIL-PRF-38535 5962F9860101VCC ACS02DMSR-03 ACS02D/SAMPLE-03

Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input NOR Gate Features The Radiation Hardened ACS02MS is a Quad

ACS02MS ACS02MS Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input NOR Gate Features The Radiation Hardened ACS02MS ACS02MS is a Quad 2-Input NOR Gate. For each gate, a HIGH level on either A or B input results in a LOW level on the Y output. A LOW level on both the A and B inputs results in a HIGH level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. 4540 · QML Qualified Per MIL-PRF-38535 MIL-PRF-38535 Requirements The ACS02MS ACS02MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS02MS ACS02MS are contained in SMD 5962-98601. A "hot-link" is provided on our homepage with instructions for downloading. www.intersil.com/data/sm/index.asp · 1.25 Micron Radiation Hardened SOS CMOS · Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose. . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . . . . . . 100MeV/(mg/cm2) · Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC) · Output Current . . . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min) · Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max) · Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 12ns (Max) Applications · High Speed Control Circuits · Sensor Monitoring · Low Power Designs Ordering Information INTERNAL MARKETING NUMBER ORDERING NUMBER 5962F9860101VCC 5962F9860101VCC ACS02DMSR-03 ACS02DMSR-03 ACS02D/SAMPLE-03 ACS02D/SAMPLE-03 ACS02D/SAMPLE-03 ACS02D/SAMPLE-03 5962F9860101VXC 5962F9860101VXC ACS02KMSR-03 ACS02KMSR-03 ACS02K/SAMPLE-03 ACS02K/SAMPLE-03 5962F9860101V9A 5962F9860101V9A TEMP. RANGE (oC) PACKAGE DESIGNATOR -55 to 125 14 Ld SBDIP CDIP2-T14 CDIP2-T14 25 14 Ld SBDIP CDIP2-T14 CDIP2-T14 -55 to 125 14 Ld Flatpack CDFP4-F14 CDFP4-F14 ACS02K/SAMPLE-03 ACS02K/SAMPLE-03 25 14 Ld Flatpack CDFP4-F14 CDFP4-F14 ACS02HMSR-03 ACS02HMSR-03 25 Die N/A Pinouts ACS02MS ACS02MS (SBDIP) TOP VIEW ACS02MS ACS02MS (FLATPACK) TOP VIEW 1Y 1 14 VCC 1Y 1 14 VCC A1 2 13 Y4 A1 2 13 Y4 B1 3 12 B4 B1 3 12 B4 Y2 4 11 A4 A2 5 10 Y3 B2 6 9 B3 GND 7 8 A3 11 A4 Y2 4 A2 5 10 Y3 B2 6 9 B3 GND 7 8 A3 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 ACS02MS ACS02MS Die Characteristics DIE DIMENSIONS: PASSIVATION: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils ±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS METALLIZATION: AI Bond VCC First Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm ADDITIONAL INFORMATION: Worst Case Current Density: