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1 - 50 of about 120 for ABI Electronics |
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First line: Abstract: .. Not All RFID Vendors Ready for the Wal-Mart Challenge, Claims ABI continued from previous page .. , automotive, electronics, broadband and energy industries. Details can be found on the web at .. datasheet abstract.. |
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First line: UM0438 User manual Variable-Length Encoding VLE extension programming interface manual Introduction This Abstract: .. PowerPCTM e500 Application Binary Interface e500 ABI to support VLE technology. ● Section 3 .. IEEE Institute of Electrical and Electronics Engineers. Preface UM0438. 10/50. ITLB .. datasheet abstract.. |
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First line: GP1A70R / GP1A71R GP1A70R / GP1A71R Features 2-phase digital output Sensing accuracy GP1A70R Disk slit pitch Abstract: .. ABI. Phase difference θ. AB1. GP1A70R/GP1A71R. Fig. 6-a Phase Difference vs. Ambient Temperature .. --- Industrial control --- Audio visual equipment --- Consumer electronics ii Measures .. datasheet abstract.. |
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First line: Application Note AN1021 Frequency Control Products Zigbee Radio Applications Introduction ZigBee low-power Abstract: .. While ZigBee is applicable in industrial and consumer markets, ABI's report suggests that the .. as well as secure features involving wireless applications within consumer electronics have .. datasheet abstract.. |
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First line: Analogue Digital Handheld Testing devices State Technology Very large scale integration allows Abstract: .. ABI Electronics Limited. Dodworth Business Park Dodworth, Barnsley South Yorkshire S75 3SP United Kingdom. Tel: +44 1226 207420 Fax: +44 1226 207620 www.abielectronics.co.uk. Making Light Work .. datasheet abstract.. |
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First line: DEVICE OPERATIONS CMOS SDRAM SDRAM Device Operations Samsung Electronics reserves right change Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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41 Pages |
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First line: DEVICE OPERATIONS MODE REGISTER FIELD TABLE PROGRAM MODES Register Programmed with Address Abstract: .. ELECTRONICS. Rev.0.0 Jan. 2000. CLOCK CLK The clock input is used as the reference for all SDRAM .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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17 Pages |
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First line: DEVICE OPERATIONS MODE REGISTER FIELD TABLE PROGRAM MODES Register Programmed with Address Abstract: .. ELECTRONICS. Rev. 0.2 Sep. 1999. CLOCK CLK The clock input is used as the reference for all SDRAM .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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17 Pages |
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First line: ALTIVECPIM / D Rev. AltiVec Technology Programming Interface Manual DigitalDNA Mfax trademarks Motorola Inc. Abstract: .. ABI and AIX ABI Stack Frame Figure 3-2 shows how the Apple Macintosh ABI and AIX ABI stack frame is .. of Electrical and Electronics Engineers, Inc. with the permission of the IEEE. Note that some .. datasheet abstract.. |
1635.45 Kb |
262 Pages 
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First line: ALTIVECPIM / D Rev. AltiVec Technology Programming Interface Manual DigitalDNA Mfax trademarks Motorola Inc. Abstract: .. ABI and AIX ABI Stack Frame Figure 3-2 shows how the Apple Macintosh ABI and AIX ABI stack frame is .. of Electrical and Electronics Engineers, Inc. with the permission of the IEEE. Note that some .. datasheet abstract.. |
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262 Pages
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First line: FEDD56V16800F-01 Semiconductor MSM56V16800F 2-Bank 1048576-Word 8-Bit SYNCHRONOUS DYNAMIC This version November. Previous Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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31 Pages |
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First line: E2G1057-29-41 Semiconductor MD56V62320 Semiconductor This version Apr. MD56V62320 4-Bank 524288-Word 32-Bit SYNCHRONOUS Abstract: .. ABI than Listed Above. H L L L L XILLEGAL L. L X X X X X NOP L. FUNCTION TRUTH TABLE for CKE Table 2 Note .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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30 Pages |
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First line: K4S28163LD-RG / S CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP VDD / VDDQ 2.5V / 1.8V 2.5V / 2.5V TCSR PASR Abstract: .. marketing team in samsung electronics when considering the use of a product con-tained herein .. X X Exit Self Refresh --> Idle after tRFC ABI L H H X X X X Exit Self Refresh --> Idle after tRFC ABI .. datasheet abstract.. |
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52 Pages |
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First line: K4S28163LD-RF / R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP VDD / VDDQ 2.5V / 1.8V 2.5V / 2.5V TCSR PASR Abstract: .. marketing team in samsung electronics when considering the use of a product con-tained herein .. X X Exit Self Refresh --> Idle after tRFC ABI L H H X X X X Exit Self Refresh --> Idle after tRFC ABI .. datasheet abstract.. |
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52 Pages |
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First line: K4S281633D-RL / N / P CMOS SDRAM 8Mx16 SDRAM 54CSP VDD / VDDQ 3.0V / 3.0V 3.3V / 3.3V Revision February Rev. Abstract: .. marketing team in samsung electronics when considering the use of a product con-tained herein .. X X Exit Self Refresh --> Idle after tRFC ABI L H H X X X X Exit Self Refresh --> Idle after tRFC ABI .. datasheet abstract.. |
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First line: GP1A33R GP1A33R Features 2-phase digital output Capable using plastic disk Sensing accuracy Abstract: .. ABI. t AH t AP. t BH t BP. VCC = 5V I F= 30mA T a = 25 ̊C. VCC = 5V I F= 30mA T a = 25 ̊C. θ ABI = x 360 ̊ tAP tABI. GP1A33R .. --- Industrial control --- Audio visual equipment --- Consumer electronics ii Measures .. datasheet abstract.. |
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First line: GP1A30R GP1A30R Features 2-phase digital output Possible plastic disk High sensing accuracy Abstract: .. t ABI t AP. Phase difference θ. AB1. Ambient Temperature Temperature. Output A Ambient .. --- Industrial control --- Audio visual equipment --- Consumer electronics ii Measures .. datasheet abstract.. |
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First line: Mobile DRAM VDD 2.5V 1.8V 2.5V K4S56163LC-RG S CMOS SDRAM 16Mx16 Mobile DRAM Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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49 Pages |
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First line: Mobile DRAM VDD 2.5V 1.8V 2.5V K4S56163LC-RF R CMOS SDRAM 16Mx16 Mobile DRAM Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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49 Pages |
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First line: VDD 2.5V VDDQ 1.8V 2.5V K4S56163LC-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP Revision Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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47 Pages |
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First line: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP DD / V 3.0V / 3.0V 3.3V / 3.3V Revision December Rev. Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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47 Pages |
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First line: Semiconductor MS82V48540 393216-Word 32-Bit 4-Bank FIFO-SGRAM FEDS82V48540-01 Issue Date Nov. GENERAL DESCRIPTION MS82V48540 Abstract: .. All Banks Idle ABI L L × × × × × NOP 6. H H × × × × × Refer to Truth Table. H L × × × × × Begin Clock Suspend Next .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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44 Pages |
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First line: PEDS82V32520-01 Semiconductor MS82V32520 524288-Word 32-Bit 2-Bank FIFO-SGRAM This version Jul. Preliminary GENERAL Abstract: .. All Banks Idle ABI L L × × × × ×NOP 6. H H × × × × ×Refer to Truth Table. H L × × × × × Begin Clock Suspend Next .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
1169.23 Kb |
42 Pages |
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First line: Semiconductor MS82V16520A 262144-Word 32-Bit 2-Bank SGRAM FEDS82V16520A-01 Issue Date Jun. GENERAL DESCRIPTION MS82V16520A Abstract: .. All Banks Idle ABI L L × × × × × NOP 6. H H × × × × × Refer to Truth Table. H L × × × × × Begin Clock Suspend Next .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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40 Pages |
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First line: Semiconductor MD56V62160E 4-Bank 1048576-Word 16-Bit SYNCHRONOUS DYNAMIC FEDD56V62160E-01 Issue Date Feb. DESCRIPTION Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
426 Kb |
34 Pages |
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First line: FEDD56V16160F-02 Semiconductor MSM56V16160F 2-Bank 524288-Word 16-Bit SYNCHRONOUS DYNAMIC This version March. Previous Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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31 Pages |
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First line: Semiconductor MD56V62160F 4-Bank 1048576-Word 16-Bit SYNCHRONOUS DYNAMIC FEDD56V62160F-02 Issue Date Oct. DESCRIPTION Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
365.04 Kb |
33 Pages |
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First line: Semiconductor MSM56V16160F 2-Bank Word SYNCHRONOUS DYNAMIC This version Sep.1999 DESCRIPTION MSM56V16160F 2-Bank Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
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31 Pages |
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First line: KM48S2020C Revision History Revision .4 November tRDL changed 10ns 12ns. Binning does meet Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
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44 Pages |
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First line: KM44S4020C Revision History Revision November tRDL changed 10ns 12ns. Binning does meet Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
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44 Pages |
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First line: KM416S1021C 512K 16Bit Banks Synchronous DRAM with SSTL interface FEATURES JEDEC standard Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
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41 Pages |
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First line: KM416S1020C Revision History Revision April CMOS SDRAM Changed DC / AC Test Output Load Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
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42 Pages |
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First line: K4S641632C 16Bit Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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42 Pages |
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First line: KM48S8030B CMOS SDRAM Revision History Revision .3 November tRDL changed 10ns 12ns. Binning Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1096.74 Kb |
43 Pages |
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First line: KM48S8020B CMOS SDRAM Revision History Revision .3 November tRDL changed 10ns 12ns. Binning Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1044 Kb |
43 Pages |
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First line: KM44S16030B Revision History Revision .3 November tRDL changed 10ns 12ns. Binning does meet Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1096.68 Kb |
43 Pages |
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First line: KM44S16020B CMOS SDRAM Revision History Revision .3 November tRDL changed 10ns 12ns. Binning Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1052.53 Kb |
43 Pages |
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First line: KM416S8030 16Bit Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
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42 Pages |
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First line: KM416S4031B 16Bit Banks Synchronous DRAM with SSTL interface FEATURES JEDEC standard 3.3V Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1053 Kb |
40 Pages |
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First line: KM416S4030B CMOS SDRAM Revision History Revision .1 November tRDL changed 10ns 12ns. Binning Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1096.99 Kb |
43 Pages |
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First line: KM416S4020B CMOS SDRAM Revision History Revision .1 November changed 10ns 12ns. Binning does Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after t RFC ABI Exit Self Refresh --> Idle after t RFC ABI ILLEGAL .. datasheet abstract.. |
1052.56 Kb |
43 Pages |
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First line: K4S283233F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA DD / V 3.0V / 3.0V 3.3V / 3.3V Revision January Rev. Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
677.61 Kb |
46 Pages |
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First line: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V VDDQ 2.5V Revision January Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
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46 Pages |
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First line: E2L0068-19-61 Semiconductor Semiconductor MSM54V25632A DESCRIPTION This version Jun. MSM54V25632A Previous version Sep. Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
842.29 Kb |
67 Pages |
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First line: FEDS82V16520-05 Semiconductor MS82V16520 DESCRIPTION This version Mar. Previous version Feb. 262144-Word 32-Bit Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
660.06 Kb |
67 Pages |
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First line: FEDS82V16520-04 Semiconductor MS82V16520 DESCRIPTION This version Feb. Previous version Jul. 262144-Word 32-Bit Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
668.99 Kb |
67 Pages |
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First line: E2L1056-39-72 Semiconductor Semiconductor MS82V16520 DESCRIPTION This version Jul. MS82V16520 Previous version Sep. Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment .. datasheet abstract.. |
825.34 Kb |
67 Pages |
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First line: MODEL SERIES Series Thick Film Chip Resistor Arrays RoHS Compliant MODEL STYLES Abstract: .. BCN 16 4A, AB, ABI. .032 .039 .118 .014 .018 .039 .039 .118 .014 .018 . 039 . 0.80 1.00 3 .. A subsidiary of TT electronics .. datasheet abstract.. |
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9 Pages
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First line: K4S643232H SDRAM SDRAM TSOP-II with Pb-Free RoHS compliant Revision April INFORMATION THIS Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
407.63 Kb |
28 Pages
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First line: SDRAM 64Mb H-die x32 CMOS SDRAM SDRAM 512K 32bit Banks Synchronous DRAM Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL .. datasheet abstract.. |
318.53 Kb |
28 Pages |
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