Fulltext Datasheet Results		1 - 50 of about 78 for ABI Electronics
	First line: RFID alien Contact Jake Wengroff pr@abiresearch.com ABIRESEARCH.COM Hamilton Avenue Oyster bay, York 11771 516-624-3113 516-624-3115 RFID Vendors Ready Wal-Mart Challenge, Claims Oyster Bay, November 2003 Abstract: .. Not All RFID Vendors Ready for the Wal-Mart Challenge, Claims ABI continued from previous page .. , automotive, electronics, broadband and energy industries. Details can be found on the web at ..  Tags: RFID alien RFID  a 3115   datasheet abstract..	32.64 Kb	2 Pages	Original
	First line: Power Electronics World 3.3V Abstract: .. TDK Power ElectronIcs World ilil ;., . #lIi.;t.aJllfItJii.aBi j.t ,:i<; .allHU J, iEtE$t!l!~I If'N~[ililllifItJ DC-DC $til! H E~~lIi.;t.a.~ilifItJ~~~.aB~~. epa::1"IIIi_m.DC ..  Tags:   datasheet abstract..	816.88 Kb	1 Pages	OCR Scan
	First line: gsm opener door ZigBee zigbee based remote control home automation using zigbee remote control for home appliances rf based Frequency Control Products Zigbee Radio Applications ZigBeeTM low-power, short-distance wireless standard that great possibilities applications from home automation industrial Abstract: .. While ZigBee is applicable in industrial and consumer markets, ABI's report suggests that the .. as well as secure features involving wireless applications within consumer electronics have ..  Tags: remote control for home appliances rf based home automation using zigbee zigbee based remote control ZigBee*  schneider*  huawei gsm  Huawei  gsm opener door  Frequency Control Products  datasheet for remote control for garage  bluetooth report  ATS-SM  ATS 16Mhz   AN1021	51.76 Kb	3 Pages	Original
	First line: LinearMaster* usb connector 2076* DIGITAL IC TESTER Analogue Digital Handheld Testing devices State Technology Very large scale integration allows advanced functionality ease combined Compact Professional Range's hand-held, battery operated units. line character matrix shows result test 'PASS' 'FAIL Abstract: .. ABI Electronics Limited. Dodworth Business Park Dodworth, Barnsley South Yorkshire S75 3SP United Kingdom. Tel: +44 1226 207420 Fax: +44 1226 207620 www.abielectronics.co.uk. Making Light Work ..  Tags: DIGITAL IC TESTER usb connector 2076* LinearMaster* "ABI Electronics"   datasheet abstract..	377.84 Kb	2 Pages	Original
	First line: f32 motorola vector scope MPCPRGREF/D ALTIVECPIM/D 6/1999 Rev. AltiVec Technology Programming Interface Manual DigitalDNA Mfax trademarks Motorola, Inc. PowerPC name PowerPC logotype trademarks International Business Machines Corporation used Motorola under license from International Business Machin Abstract: .. ABI and AIX ABI Stack Frame Figure 3-2 shows how the Apple Macintosh ABI and AIX ABI stack frame is .. of Electrical and Electronics Engineers, Inc. with the permission of the IEEE. Note that some ..  Tags: f32 motorola vector scope  V20 OBO*  NGT 05  MPCPRGREF/D  freescale 206   datasheet abstract..	1635.45 Kb	262 Pages	Original
	First line: About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric Industry Co., Ltd.& Abstract: .. ABI than Listed Above. H L L L L XILLEGAL L. L X X X X X NOP L. FUNCTION TRUTH TABLE for CKE Table 2 Note .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MD56V62320	439.65 Kb	31 Pages	Original
	First line: E2G1057-29-41 MD56V62320 This version: Apr. 1999 MD56V62320 Abstract: .. ABI than Listed Above. H L L L L XILLEGAL L. L X X X X X NOP L. FUNCTION TRUTH TABLE for CKE Table 2 Note .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MD56V62320	430.32 Kb	30 Pages	Original
	First line: OPIC Photointerrupter GP1A30R GP1A30R 2-phase digital output Possible plastic disk High sensing accuracy Disk slit pitch 0.7mm compatible output Compact light Abstract: .. t ABI t AP. Phase difference θ. AB1. Ambient Temperature Temperature. Output A Ambient .. --- Industrial control --- Audio visual equipment --- Consumer electronics ii Measures ..  Tags: OPIC Photointerrupter GP1A30R*   GP1A30R	71.62 Kb	5 Pages	Original
	First line: GP1A33R GP1A33R 2-phase digital output Capable using plastic disk Sensing accuracy Disk slit pitch: 1.14mm compatible Compact light Abstract: .. ABI. t AH t AP. t BH t BP. VCC = 5V I F= 30mA 30mA T a = 25 ÌŠC. VCC = 5V I F= 30mA 30mA T a = 25 ÌŠC. θ ABI = x 360 ÌŠ tAP tABI. GP1A33R GP1A33R .. --- Industrial control --- Audio visual equipment --- Consumer electronics ii Measures ..  Tags:   GP1A33R	78.15 Kb	6 Pages	Original
	First line: Mobile DRAM (VDD 2.5V, 1.8V 2.5V) K4S56163LC-RG(S) CMOS SDRAM 16Mx16 Mobile DRAM Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S56163LC-RG	696.16 Kb	49 Pages	Original
	First line: Mobile DRAM (VDD 2.5V, 1.8V 2.5V) K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile DRAM Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S56163LC-RF	695.77 Kb	49 Pages	Original
	First line: (VDD 2.5V, VDDQ 1.8V 2.5V) K4S56163LC-RL(N) CMOS SDRAM 16Mx16 SDRAM 54CSP Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S56163LC-RL	668.32 Kb	47 Pages	Original
	First line: K4S561633C-RL(N) CMOS SDRAM 16Mx16 SDRAM 54CSP DD/V 3.0V/3.0V 3.3V/3.3V) Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S561633C-RL	668.27 Kb	47 Pages	Original
	First line: MSM56V16160F 2-Bank 524,288 Word SYNCHRONOUS DYNAMIC This version Sep.1999 Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MSM56V16160F	2982.69 Kb	31 Pages	Original
	First line: active suspension About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric I Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags: active suspension   MSM56V16160F	2928.41 Kb	32 Pages	Original
	First line: active suspension About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric I Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags: active suspension   MD56V62160E	456.95 Kb	35 Pages	Original
	First line: MD56V62162J* About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric Indust Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags: MD56V62162J*   MD56V62162J	422.6 Kb	37 Pages	Original
	First line: About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric Industry Co., Ltd.& Abstract: .. All Banks Idle ABI L L × × × × × NOP 6. H H × × × × × Refer to Truth Table. H L × × × × × Begin Clock Suspend Next .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MS82V48540	1440.8 Kb	45 Pages	Original
	First line: active suspension About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric I Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags: active suspension   MSM56V16800F	2932.78 Kb	32 Pages	Original
	First line: Semiconductor MD56V62160F 4-Bank 1,048,576-Word 16-Bit SYNCHRONOUS DYNAMIC FEDD56V62160F-02 Issue Date: Oct. 2003 Abstract: .. L H H X X X X Exit Self Refresh --> ABI. L H L H H H X Exit Self Refresh --> ABI. L H L H H L X ILLEGAL. L H L H L X X .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   FEDD56V62160F-02	365.04 Kb	33 Pages	Original
	First line: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA (VDD 2.5V, VDDQ 2.5V) Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags: 32bit sdram   K4S283234F-M	677.19 Kb	46 Pages	Original
	First line: RX-28 IBM PowerPC Processor 350 Mips data sheet of 76952 7 segment display LTS 542 PowerPC Compiler Writer's Guide Edited Steve Hoxey Faraydon Karim Bill Hank Warren Warthman Associates Abstract: .. dedicated register A register designated by an ABI for a specific use. def-def dependence See .. â–  Institute of Electrical and Electronics Engineers, IEEE Standard Glossary of Mathemat ..  Tags: 7 segment display LTS 542 data sheet of 76952 IBM PowerPC Processor 350 Mips RX-28   datasheet abstract..	859.5 Kb	264 Pages	Original
	First line: db3 bl dba1 E2L1056-39-72 Semiconductor Semiconductor MS82V16520 This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags: dba1 db3 bl   MS82V16520	825.34 Kb	67 Pages	Original
	First line: About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric Industry Co., Ltd.& Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MSM54V25632A	829.29 Kb	68 Pages	Original
	First line: About change name such "Oki Electric Industry Ltd." "OKI" documents Semiconductor Co., Ltd. semiconductor business Electric Industry Co., Ltd. succeeded Semiconductor Co., Ltd. October 2008. Therefore, please accept that although terms marks "Oki Electric Industry Co., Ltd.& Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   MS82V16520	673.35 Kb	68 Pages	Original
	First line: FEDS82V16520-04 Semiconductor MS82V16520 This version: Feb. 2000 Previous version: Jul. 1999 Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   FEDS82V16520-04	668.99 Kb	67 Pages	Original
	First line: FEDS82V16520-05 Semiconductor MS82V16520 This version: Mar. 2001 Previous version: Feb. 2000 Abstract: .. Exit Power Down fi ABI. Exit Power Down fi ABI. ILLEGAL. ILLEGAL. ILLEGAL. NOP Continue power down .. 6. The products listed in this document are intended for use in general electronics equipment ..  Tags:   FEDS82V16520-05	660.06 Kb	67 Pages	Original
	First line: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 Power CMOS Static FEATURE SUMMARY Process Technology: CMOS Organization 128Kx8 Power Supply Voltage KM68V1000B family: 3.3V 0.3V KM68U1000B family 3.0V 0.3V Data Retention Voltage 2V(Min) Abstract: .. c 14 19 31/06 V03 c 1 « 18 31/05 V » c 16 17 31/04 EI O A9 ABI Al 3 t /WE C CS 2 _ A15 £ Vcc C N.C C A1B AH E A12 £ A7 .. 97 ELECTRONICS 7cimms 0DS3bfl0 31T This Material Copyrighted By Its Respective Manufacturer ..  Tags:   datasheet abstract..	520.7 Kb	11 Pages	OCR Scan
	First line: SDRAM 64Mb H-die (x32) CMOS SDRAM SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   datasheet abstract..	318.59 Kb	28 Pages	Original
	First line: SDRAM 64Mb H-die (x32) CMOS SDRAM SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags: samsung k4s643232h - tc70   datasheet abstract..	318.53 Kb	28 Pages	Original
	First line: km4132g KM4132G112 CMOS SGRAM 32Mbit SGRAM 512K 32bit Banks Synchronous Graphic LVTTL Revision March 1999 Samsung Electronics reserves right change products specification without notice. Rev. (Mar. 1999) KM4132G112 Abstract: .. DSF : Operation : : : Minimum cycle time ; ; L Normal write tCCD H Block write tBWC ELECTRONICS -29 .. H H X X X X X Exit Self Refresh -> ABI after Irc 7 L H L H H H X X Exit Self Refresh -> ABI after Irc 7 L H L H H L X ..  Tags: km4132g   datasheet abstract..	2327.26 Kb	50 Pages	OCR Scan
	First line: DATE (YR-MO-DA) APPROVED Abstract: .. CHOKED BY DRAWING APPROVAU 91-01-30 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON .. through ABI B1 through B81 1 \ \ I I I X X \ Input Input Isolation I \ X I X store A and B data InEut \ InEut ..  Tags:   datasheet abstract..	708.11 Kb	19 Pages	OCR Scan
	First line: CI 6264 Kopp MS 85 BROWN BOVERI STR 6264 str f 6264 High Voltage rectifiers Hochspannungsgleichrichter Edition Reg. 2743-02 Symbols Definitions Abstract: .. Sweden Pelcon Electronics AB Girovägen 13 Box 6023 17562 Järfälla Phone: 8-7 95 98 70 Fax: 8-7 60 .. Spain ABI Semiconductores Dalia 387 Ch 6 28109 El Soto Alcobendas Phone: 91-6 50 76 51 Fax: 91 ..  Tags: str f 6264 Kopp MS 85 CI 6264 STR 6264  m 9049  Brown Boveri  ASEA Brown*  asea  abb s 212  9049 ir  101 6206   datasheet abstract..	244.54 Kb	16 Pages	Original
	First line: KAA00B209M-TGxx Multi-Chip Package MEMORY MEMORY Abstract: .. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  sensing "nand flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  samsung 512MB NOR FLASH  samsung "nor flash" sensing  MCP MEMORY   KAA00B209M-TGxx	1960.89 Kb	82 Pages	Original
	First line: F407 KBE00D002M-F407 Advance Preliminary MEMORY Multi-Chip Package MEMORY 256M (16Mx16) Nand Flash*2 128M (2Mx16x4Banks) Mobile SDRAM*2 Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  SAMSUNG MCP  MCP MEMORY  KBE00D002M-F407  F407   KBE00D002M-F407	1847.21 Kb	73 Pages	Original
	First line: KAG00E007M-FGGV Advance Preliminary MEMORY Specification 256Mb NAND*2 256Mb Mobile SDRAM Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  sensing "nand flash memory" "SAMSUNG Electronics"  SAMSUNG MCp nand ddr  SAMSUNG MCP  MCP MEMORY  MCP Electronics  512M nand mcp   KAG00E007M-FGGV	1833.2 Kb	74 Pages	Original
	First line: KAG00J007M-FGG2 Advance Preliminary MEMORY Specification 256Mb NAND*2 256Mb Mobile SDRAM Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: spare parts for mobile  sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  sensing "nand flash memory" "SAMSUNG Electronics"  SAMSUNG MCp nand ddr  nand mcp  MCP MEMORY  MCP Electronics  KAG00J007M-FGG2  512M nand mcp   KAG00J007M-FGG2	1846.02 Kb	74 Pages	Original
	First line: KAG00H008M-FGG2 Advance Prelimanary MEMORY Specification 256Mb NAND*2 256Mb Mobile SDRAM Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  sensing "nand flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  samsung 512MB NOR FLASH  MCP MEMORY   KAG00H008M-FGG2	1783.95 Kb	70 Pages	Original
	First line: K5D5657DCM-F015 Preliminary MEMORY Specification 256Mb NAND 256Mb Mobile SDRAM Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  SAMSUNG MCp nand ddr  SAMSUNG MCP  MCP MEMORY  MCP Electronics  K5D5657DCM-F015   K5D5657DCM-F015	1829.33 Kb	74 Pages	Original
	First line: KAA00B606A Multi-Chip Package MEMORY Preliminary MEMORY Abstract: .. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  sensing "nand flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  MCP MEMORY  "decoding" "Nor flash" "samsung electronics"   KAA00B606A	1953.53 Kb	81 Pages	Original
	First line: K5D5657ACM-F015 Advance Preliminary MEMORY Specification 256Mb NAND 256Mb Mobile SDRAM Abstract: .. Please contact to the memory marketing team in samsung electronics when considering the use .. L H H X X X X Exit Self Refresh --> Idle after tsRFX ABI 6. L H L H H H X Exit Self Refresh --> Idle after ..  Tags: sensing pre-charge "nand flash memory" "SAMSUNG  sensing bias "nand flash memory" "SAMSUNG Electro  samsung nand ddr  SAMSUNG MCp nand ddr  SAMSUNG MCP  MCP MEMORY  MCP Electronics   K5D5657ACM-F015	1834.25 Kb	74 Pages	Original
	First line: KM4132G512A CMOS SGRAM 16Mbit SGRAM 256K 32bit Banks Synchronous Graphic LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. L H H X X X X X Exit Self Refresh --> ABI after tRC 7. L H L H H H X X Exit Self Refresh --> ABI after tRC 7. L H L H ..  Tags: km4132g512*   KM4132G512A	1245.95 Kb	51 Pages	Original
	First line: K4S161622H CMOS SDRAM SDRAM 512K 16bit Banks Synchronous DRAM LVTTL Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S161622H	689.11 Kb	44 Pages	Original
	First line: ba qc transistor dba1 K4G323222M CMOS SGRAM 32Mbit SGRAM 512K 32bit Banks Synchronous Graphic LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. L H H X X X X X Exit Self Refresh --> ABI after tRC 7. L H L H H H X X Exit Self Refresh --> ABI after tRC 7. L H L H ..  Tags: dba1 ba qc transistor   K4G323222M	1144.48 Kb	50 Pages	Original
	First line: KM416S1020C CMOS SDRAM SDRAM 512K 16bit Banks Synchronous DRAM LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   KM416S1020C	1089.16 Kb	43 Pages	Original
	First line: KM432S2030C CMOS SDRAM SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   KM432S2030C	1157.47 Kb	43 Pages	Original
	First line: K4S161622E-TC80 K4S161622E-TC60 K4S161622E CMOS SDRAM SDRAM 512K 16bit Banks Synchronous DRAM LVTTL Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags: K4S161622E-TC80 K4S161622E-TC60   K4S161622E	654.97 Kb	42 Pages	Original
	First line: K4G323222A CMOS SGRAM 32Mbit SGRAM 512K 32bit Banks Synchronous Graphic LVTTL Abstract: .. Samsung Electronics reserves the right to change products or specification without notice .. L H H X X X X X Exit Self Refresh --> ABI after tRC 7. L H L H H H X X Exit Self Refresh --> ABI after tRC 7. L H L H ..  Tags:   K4G323222A	1145.07 Kb	50 Pages	Original
	First line: K4S161622E CMOS SDRAM SDRAM 512K 16bit Banks Synchronous DRAM LVTTL Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags: K4S161622E-TC60   K4S161622E	670.44 Kb	42 Pages	Original
	First line: K4S161622D-TI/E CMOS SDRAM SDRAM 512K 16bit Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Abstract: .. * Samsung Electronics reserves the right to change products or specification without notice .. Exit Self Refresh --> Idle after tRFC ABI Exit Self Refresh --> Idle after tRFC ABI ILLEGAL ..  Tags:   K4S161622D-TI E	675.97 Kb	43 Pages	Original
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