| Contextual Datasheet Results |
1 - 50 of about 10000+ for ABB Semiconductors |
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First line: Abstract: .. +*+@ABB :+C. > < 1 +7* $> &< 7 7. ,56. $% &’# <6 + 9*5 7* $% & > # D< %3*A @!C 1. %3*%*6A .. datasheet abstract.. |
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First line: VRSM IFAVM IFRMS IFSM Rectifier Diode 5SDD 08D5000 Target specification Doc. 5SYA1165-00 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRSM = 5200 V. IFAVM = 810 A. IFRMS = 1270 A. IFSM = 10.5 kA. VF0 = 0.90 V. rF = 0.600 mΩ Ω Ω Ω. Doc. No. 5SYA1165-00 Sep. 01. • Very .. datasheet abstract.. |
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First line: VRSM IFAVM IFRMS IFSM Rectifier Diode 5SDD 24F2800 Target specification Doc. 5SYA1167-00 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRSM = 3000 V. IFAVM = 2415 A. IFRMS = 3520 A. IFSM = 30 kA. VF0 = 0.85 V. rF = 0.150 mΩ Ω Ω Ω. Doc. No. 5SYA1167-00 Sep. 01. • Very .. datasheet abstract.. |
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First line: VRSM IFAVM IFRMS IFSM Rectifier Diode 5SDD 11D2800 Target specification Doc. 5SYA1166-00 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRSM = 3000 V. IFAVM = 1070 A. IFRMS = 1680 A. IFSM = 14 kA. VF0 = 0.80 V. rF = 0.300 mΩ Ω Ω Ω. Doc. No. 5SYA1166-00 Sep. 01. • Very .. datasheet abstract.. |
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First line: VRRM IPULSE VDcmax High Voltage High Current Diode Pulsed Power Applications 5SDA Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. Pulse Power Device 5SDA 27Z1350. Mechanical Data. min. 17 kN. FM Mounting force max. 24 kN. Dp Pole-piece diameter .. datasheet abstract.. |
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First line: VRRM IPULSE VDcmax High Voltage High Current Diode Pulsed Power Applications 5SDA Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. Pulse Power Device 5SDA 27Z1202. Mechanical Data. min. 17 kN. FM Mounting force max. 24 kN. Dp Pole-piece diameter .. datasheet abstract.. |
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First line: VRRM IPULSE VDcmax High Voltage High Current Diode Pulsed Power Applications 5SDA Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. Pulse Power Device 5SDA 27Z1201. Mechanical Data. min. 17 kN. FM Mounting force max. 24 kN. Dp Pole-piece diameter .. datasheet abstract.. |
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First line: IGBT-Die 5SMX12M5201 MARKETING INFORMATION size Doc. 5SYA1613-00 Aug. loss IGBT Requires turn Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 5200 V. IC = 60 A. Die size: 14.3 * 14.3 mm. Doc. No. 5SYA1613-00 Aug. 01. • Low loss IGBT die • Requires .. datasheet abstract.. |
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First line: IGBT-Die 5SMX12L2508 size Doc. 5SYA1611-00 Aug. on-state IGBT Highly rugged design Maximum Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 2500 V. IC = 50 A. Die size: 12.4 * 12.4 mm. Doc. No. 5SYA1611-00 Aug. 01. • Low on-state IGBT die .. datasheet abstract.. |
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First line: IGBT-Die 5SMX12L2505 size Doc. 5SYA1610-00 Aug. on-state IGBT Highly rugged design Maximum Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 2500 V. IC = 50 A. Die size: 12.4 * 12.4 mm. Doc. No. 5SYA1610-00 Aug. 01. • Low on-state IGBT die .. datasheet abstract.. |
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First line: Diode-Die 5SLX12M5200 MARKETING INFORMATION size 14.3mm Doc. 5SYA1657-00 Aug.01 on-state voltage Limited Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 5200 V. IF = 70 A. Die size: 14.3 * 14.3mm. Doc. No. 5SYA1657-00 Aug.01. • Low on-state voltage .. datasheet abstract.. |
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First line: Diode-Die 5SLX12L2508 size 12.4mm Doc. 5SYA1658-00 Aug. Fast Recovery losses Soft reverse Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 2500 V. IF = 100 A. Die size: 12.4 * 12.4mm. Doc. No. 5SYA1658-00 Aug. 01. • Fast Recovery Low losses .. datasheet abstract.. |
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First line: Diode-Die 5SLX12L2505 size 12.4mm Doc. 5SYA1654-01 Aug. Fast Recovery losses Soft reverse Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 2500 V. IF = 100 A. Die size: 12.4 * 12.4mm. Doc. No. 5SYA1654-01 Aug. 01. • Fast Recovery Low losses .. datasheet abstract.. |
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First line: Abstract: .. * *@ABB :*C. > < 0 *6 #> %< 6 6. +45- #$ %&’ <5 * 8 4 6 #$ %’ > D< $2 A @!C 9 0. $2 $ 5A @!&C. 5 .. datasheet abstract.. |
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First line: Abstract: .. * *@ABB :*C. > < 0 *6 $> &< 6 6. +45- $% &#’ <5 * 8 4 6 $% &’ > # D< %2 A @!C 9 0. %2 % 5A @!C. 5 .. datasheet abstract.. |
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First line: VRSM IFAVM IFRMS IFSM Rectifier Diode 5SDD 51L2800 Doc. 5SYA1103-01 Sep. Patented Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRSM = 2800 V. IFAVM = 5150 A. IFRMS = 8080 A. IFSM = 65 kA. VF0 = 0.77 V. rF = 0.082 mΩ Ω Ω Ω. Doc. No. 5SYA1103-01 Sep. 01. • Patented .. datasheet abstract.. |
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First line: VRRM IFAVM IFSM VDClink Fast Recovery Diode 5SDF 07H4501 Doc. 5SYA 1111-02 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 4500 V. IFAVM = 900 A. IFSM = 16 kA. VF0 = 1.8 V. rF = 0.9mΩ. VDClink = 2400 V. Doc. No. 5SYA 1111-02 Aug. 2000. • Patented .. datasheet abstract.. |
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First line: VRRM IPULSE VDcmax High Voltage High Current Diode Pulsed Power Applications 5SDA Abstract: .. ABB Switzerland Ltd reserves the right to change specifications without notice. High Voltage .. .abbsem@ch.abb.comInternet: www.abb.com/semiconductors .. datasheet abstract.. |
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First line: VRRM IPULSE VDcmax High Voltage High Current Diode Pulsed Power Applications 5SDA Abstract: .. ABB Switserland Ltd reserves the right to change specifications without notice. High Voltage .. .abbsem@ch.abb.comInternet: www.abb.com/semiconductors .. datasheet abstract.. |
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First line: VRRM VDRM IPULSE VDcmax High Voltage High Current Thyristor Switch Pulsed Power Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. Pulse Power Device 5STF 07Z1201. Mechanical data. min. 17 kN. FM Mounting force max. 24 kN. Dp Pole-piece diameter .. datasheet abstract.. |
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First line: VRRM VDRM IPULSE VDcmax High Voltage High Current Thyristor Switch Pulsed Power Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. Pulse Power Device 5STF 07Z1350. Mechanical Data. min. 17 kN. FM Mounting force max. 24 kN. Dp Pole-piece diameter .. datasheet abstract.. |
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First line: VRRM Fast-Diode 5SLX 12M6500 size Doc. 5SYA1666-01 July Fast soft reverse recovery Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 6500 V. IF = 50 A. Die size: 13.6 x 13.6 mm. Doc. No. 5SYA1666-01 July 07. • Fast and soft reverse .. datasheet abstract.. |
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First line: VRRM Fast-Diode 5SLX 12M3301 size Doc. 5SYA1661-02 Feb. Fast soft reverse-recovery losses Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 3300 V. IF = 100 A. Die size: 13.6 x 13.6 mm. Doc. No. 5SYA1661-02 Feb. 05. • Fast and soft reverse .. datasheet abstract.. |
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First line: VRRM Fast-Diode 5SLX 12M1711 size Doc. 5SYA1663-01 Feb. Fast soft reverse-recovery losses Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 1700 V. IF = 200 A. Die size: 13.6 x 13.6 mm. Doc. No. 5SYA1663-01 Feb. 05. • Fast and soft reverse .. datasheet abstract.. |
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First line: VRRM Fast-Diode 5SLX 12L2510 size Doc. 5SYA1664-02 Feb. Fast soft reverse-recovery losses Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 2500 V. IF = 100 A. Die size: 12.4 x 12.4 mm. Doc. No. 5SYA1664-02 Feb. 05. • Fast and soft reverse .. datasheet abstract.. |
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First line: VRRM Fast-Diode 5SLX 12K1711 size Doc. 5SYA1662-01 Feb. Fast soft reverse-recovery losses Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 1700 V. IF = 150 A. Die size: 11.9 x 11.9 mm. Doc. No. 5SYA1662-01 Feb. 05. • Fast and soft reverse .. datasheet abstract.. |
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First line: Fast-Diode 5SLX 12M3301 PRELIMINARY size Doc. 5SYA1661-01 Fast soft reverse-recovery losses Highly Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRR = 3300 V. IF = 100 A. Die size: 13.6 x 13.6 mm. Doc. No. 5SYA1661-01 Sep 03. Fast and soft reverse-recovery .. datasheet abstract.. |
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First line: VRRM StakPak Series Presspack Diode 5SLF 20H2500 Preliminary Specification Doc. 5SYA1584-01 June Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 2500 V. IF = 2000 A. ABB StakPak TM H Series. Presspack Diode. 5SLF 20H2500 Preliminary Specification .. datasheet abstract.. |
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First line: VRSM IF AV M IF RMS IFSM Rectifier Diode 5SDD 54N4000 Doc. 5SYA1171-00 Dec. Patented Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRSM = 4000 V. IF AV M = 5200 A. IF RMS = 8200 A. IFSM = 85×10. 3. A. VF0 = 0.8 V. rF = 0.086 mΩ Ω Ω Ω. Rectifier .. datasheet abstract.. |
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First line: VRSM IF AV M IF RMS IFSM Rectifier Diode 5SDD 50N5500 Doc. 5SYA1169-00 Sep. Patented Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRSM = 5500 V. IF AV M = 4700 A. IF RMS = 7390 A. IFSM = 73×10. 3 A. VF0 = 0.8 V. rF = 0.107 mΩ. Rectifier Diode .. datasheet abstract.. |
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First line: VRSM IF AV M IF RMS IFSM Rectifier Diode 5SDD 33L5500 Doc. 5SYA1168-00 March Patented Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRSM = 5500 V. IF AV M = 3480 A. IF RMS = 5470 A. IFSM = 46×10. 3 A. VF0 = 0.94 V. rF = 0.147 mΩ. Rectifier Diode .. datasheet abstract.. |
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First line: VRRM IFAVM IFSM VDClink Fast Recovery Diode 5SDF 02D6002 PRELIMINARY Doc. 5SYA Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 6000 V. IFAVM = 250 A. IFSM = 3.6 kA. VF0 = 2.5 V. rF = 2.5mΩ. VDClink = 3000 V. Doc. No. 5SYA 1108-02 Aug. 2000. • Patented .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 3000 A ITSM = 24 kA. VT0 = 1.90 V. rT = 0.70mΩ. VDClin = 2800 V. Reverse Conducting Gate turn-off Thyristor .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGT 40L4502 MARKETING INFORMATION Doc. Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 4000 A ITSM = 25 kA. VT0 = 1.08 V. rT = 0.29mΩ. VDClin = 2800 V. Gate turn-off Thyristor. 5SGT 40L4502 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGT 30J6004 Doc. 5SYA 1212-04 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 6000 V. ITGQM = 3000 A ITSM = 24 kA. VT0 = 1.70 V. rT = 0.60mΩ. VDClin = 3800 V. Gate turn-off Thyristor. 5SGT 30J6004 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGF 40L4502 Doc. 5SYA 1209-03 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 4000 A ITSM = 25 kA. VT0 = 1.20 V. rT = 0.65mΩ. VDClin = 2800 V. Gate turn-off Thyristor. 5SGF 40L4502 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. 5SYA Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 3000 A ITSM = 24 kA. VT0 = 1.80 V. rT = 0.70mΩ. VDClin = 3000 V. Gate turn-off Thyristor. 5SGF 30J4502 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 40L4501 Doc. 5SYA 1208-02 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 4000 A ITSM = 25 kA. VT0 = 2.10 V. rT = 0.58mΩ. VDClin = 2800 V. Gate turn-off Thyristor. 5SGA 40L4501 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 30J4505 Doc. 5SYA 1204-04 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 3000 A ITSM = 25 kA. VT0 = 1.90 V. rT = 0.53mΩ. VDClin = 2200 V. Gate turn-off Thyristor. 5SGA 30J4505 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 30J4502 Doc. 5SYA 1202-03 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 3000 A ITSM = 24 kA. VT0 = 2.20 V. rT = 0.60mΩ. VDClin = 2800 V. Gate turn-off Thyristor. 5SGA 30J4502 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 25H2501 Doc. 5SYA 1206-01 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V. ITGQM = 2500 A ITSM = 16 kA. VT0 = 1.66 V. rT = 0.57mΩ. VDClin = 1400 V. Gate turn-off Thyristor. 5SGA 25H2501 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 20H4502 Doc. 5SYA 1210-01 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 4500 V. ITGQM = 2000 A ITSM = 13 kA. VT0 = 1.80 V. rT = 0.85mΩ. VDClin = 2200 V. Gate turn-off Thyristor. 5SGA 20H4502 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 20H2501 Doc. 5SYA 1205-01 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V. ITGQM = 2000 A ITSM = 16 kA. VT0 = 1.66 V. rT = 0.57mΩ. VDClin = 1400 V. Gate turn-off Thyristor. 5SGA 20H2501 .. datasheet abstract.. |
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First line: VDRM ITGQM ITSM VDClin Gate turn-off Thyristor 5SGA 15F2502 Doc. 5SYA 1214-01 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V. ITGQM = 1500 A ITSM = 10 kA. VT0 = 1.55 V. rT = 0.63mΩ. VDClin = 1400 V. Gate turn-off Thyristor. 5SGA 15F2502 .. datasheet abstract.. |
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First line: VRRM IFAVM IFRMS IFSM Housingless Welding Diode 5SDD 92Z0400 PRELIMINARY Doc. 5SYA1178-00 Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 400 V. IFAVM = 9244 A. IFRMS = 14520 A. IFSM = 60000 A. VF0 = 0.780 V. rF = 0.031 mΩ. Doc. No. 5SYA1178 .. datasheet abstract.. |
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First line: VRRM IFAVM IFRMS IFSM Housingless Welding Diode 5SDD 0135Z0400 PRELIMINARY Doc. 5SYA1179-00 Abstract: .. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VRRM = 400 V. IFAVM = 13526 A. IFRMS = 21247 A. IFSM = 85000 A. VF0 = 0.758 V. rF = 0.021 mΩ. Doc. No. 5SYA1179 .. datasheet abstract.. |
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First line: VDRM VRRM IPULSE VDcmax High Current High di / dt Switch Pulsed Power Applications Abstract: .. ABB Switzerland Ltd reserves the right to change specifications without notice. High Current .. .abbsem@ch.abb.comInternet: www.abb.com/semiconductors .. datasheet abstract.. |
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First line: VDRM VRRM IPULSE VDcmax High Current High di / dt Switch Pulsed Power Applications Abstract: .. ABB Switzerland Ltd reserves the right to change specifications without notice. High Current .. .abbsem@ch.abb.comInternet: www.abb.com/semiconductors .. datasheet abstract.. |
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First line: VRRM IFAVM IFRMS IFSM VDClink Fast Recovery Diode IGCT applications 5SDF 08H6005 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 5500 V. IFAVM = 640 A. IFRMS = 1000 A. IFSM = 18 kA. VF0 = 2.65 V. rF = 2.1mΩ. VDClink = 3300 V. Doc. No. 5SYA 1116-01 Jan. .. datasheet abstract.. |
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First line: VRRM IFAVM IFRMS IFSM VDClink Fast Recovery Diode IGCT applications 5SDF 05F4502 Abstract: .. ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 4500 V. IFAVM = 570 A. IFRMS = 890 A. IFSM = 16 kA. VF0 = 1.50 V. rF = 1.8mΩ. VDClink = 2800 V. Doc. No. 5SYA 1151-01 Feb. .. datasheet abstract.. |
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