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Part : AAT3221IGV-3.3TI Supplier : ADVANA Manufacturer : Bristol Electronics Stock : 1,879 Best Price : - Price Each : -
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AAT3221IGV-3.3TI

Catalog Datasheet MFG & Type PDF Document Tags

DS1073

Abstract: 3tI/2 + tE NOTE: In each case there will be a small additional delay due to internal propagation , minimum values of these parameters are: tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each case there will be a small additional delay due to , 2tM tOUTH + tM tOUTH tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow tpdn tpdn tOUTH 0 tOUTH + tM tOUTH tpdn tpdn
Dallas Semiconductor
Original
DS1073 DS1073Z-XXX DS1073M-XXX DS1073M/Z-100 DS1073M/Z-

DS1073M-XXX

Abstract: ) = tI/2 tLOW (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE NOTE: In each case there , : tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In , 2tM tOUTH + tM tOUTH 3tI/2 + tE 3tI/2 + tEhigh tI/2 + tE 3tI/2 + tElow tOUTH + tM tOUTH tOUTH + tM
Dallas Semiconductor
Original
100MH DS1073M/Z-80 DS1073M/Z-66 DS1073M/Z-60 000MH 667MH

101697

Abstract: DS1075 ) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to Internal clock This is , impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + , Internal to External ­ External to Internal tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh , tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2 tpdn tpdn tOUTH 0 tOUTH + tM
Dallas Semiconductor
Original
DS1075 DS1075Z DS1075M 101697 DS1075K DS1075C

DS1073

Abstract: DS1073M-XXX (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE NOTE: In each case there will be a , ) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each , tM tOUTH 0 MAX 2tM tOUTH + tM tOUTH tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow tPDN tPDN tOUTH 0 tOUTH + tM tOUTH
Dallas Semiconductor
Original

DS1075M

Abstract: DS1075Z (min) = tI/2 tLOW (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to , 0), switch OUT0 to high impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + tEhigh 4. Disable internal oscillator and OSCIN buffer. NOTE , /2 tI/2 3tI/2 + tE 3tI/2 + tEhigh Break during SEL switch ­ Internal to External ­ External to Internal tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2
Dallas Semiconductor
Original

applications of blocking oscillator

Abstract: DS1075 ) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to Internal clock This is , impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + , /2 tI/2 3tI/2 + tE 3tI/2 + tEhigh Break during SEL switch ­ Internal to External ­ External to Internal tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2
Dallas Semiconductor
Original
applications of blocking oscillator DS1075-80

DS1075-100

Abstract: DS1075-60 3tI/2 + tE NOTE: In each case there will be a small additional delay due to internal propagation , maximum and minimum values of these parameters are: tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each case there will be a small additional delay , tM tOUTH tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow tpdn tpdn tOUTH 0 tOUTH + tM tOUTH tpdn tpdn tOUTH 0
Dallas Semiconductor
Original
DS1075-IND DS1075M-IND DS1075-100 DS1075-66 DS1075-60

DS1075

Abstract: DS1075K ) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to Internal clock This is , impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + , Internal to External ­ External to Internal tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh , tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2 tpdn tpdn tOUTH 0 tOUTH + tM
Dallas Semiconductor
Original

DS1075-100

Abstract: DS1075-60 tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE NOTE: In each case there will be a small additional , tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each case there , tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow
Dallas Semiconductor
Original

DS1075

Abstract: DS1075K ) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to Internal clock This is , impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + , Internal to External ­ External to Internal tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh , tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2 tpdn tpdn tOUTH 0 tOUTH + tM
Dallas Semiconductor
Original

DS1073

Abstract: DS1073M ) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE From External to Internal clock This is , impedance state. tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSEI (min) = tI/2 tSEI (max) = 3tI/2 + , Internal to External ­ External to Internal tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh , tI/2 + tE 3tI/2 + tElow PDN to IN/OUT Hi­Z N=1 N2 tpdn tpdn tOUTH 0 tOUTH + tM
Dallas Semiconductor
Original
DS1073Z DS1073M DS1073C

DS1073M-XXX

Abstract: DS1073 (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE NOTE: In each case there will be a , ) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each , tM tOUTH 0 MAX 2tM tOUTH + tM tOUTH tSIE tSEI tI/2 tI/2 3tI/2 + tE 3tI/2 + tEhigh tLOW tLOW tI/2 tI/2 tI/2 + tE 3tI/2 + tElow tPDN tPDN tOUTH 0 tOUTH + tM tOUTH
Dallas Semiconductor
Original
Abstract: these parameters are: tLOW (min) = tI/2 tLOW (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tE , values of these parameters are: tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each case there will be a small additional delay due to internal , tOUTH 0 tI/2 tI/2 tI/2 tI/2 tOUTH 0 tOUTH 0 MAX 2tM tOUTH + tM tOUTH 3tI/2 + tE 3tI/2 + tEhigh tI/2 + tE 3tI/2 + tElow tOUTH + tM tOUTH tOUTH + tM tOUTH 256tM 256tM 256tM 256tM 17 of 17 Dallas Dallas Semiconductor
Original
Abstract: (max) = 3tI/2 + tE 7 of 16 DS1073 NOTE: In each case there will be a small additional delay , minimum values of these parameters are: tLOW (min) = tI/2 tLOW (max) = 3tI/2 + tElow tSIE (min) = tI/2 tSIE (max) = 3tI/2 + tEhigh NOTE: In each case there will be a small additional delay due to , tOUTH 0 tOUTH 0 MAX 2tM tOUTH + tM tOUTH 3tI/2 + tE 3tI/2 + tEhigh tI/2 + tE 3tI/2 + tElow tOUTH + tM Dallas Semiconductor
Original
DS1073-100 DS1073-80 DS1073-66 DS1073-60
Abstract: R@25C=10000 DHMC +/-£% NT E = - 3 . 97./C 3353 ⡠F'ERATING RANGE : -55 TE 150 C 3TDPAGE RANGE¡-65 TG 150 C ^THERMAL TIME CGNCTANT:8 EEC, MAX * Ii I 5 3 I R A T I G N G G N 3 T A N T : 3 m W / 3 M IN POWER RATING :, 135WG35 G., DERATE TG 135 ^Ae Tested per- MIG-R-33648 May vo.ry dependent on mount i ng 1 0 0 LL Ld ⡠LL 0 \ 35 135 TEMPERATURE 03.' FIG, 1: PERFORMANCE CHARACTER I 3TI C3: RIG, 3 POWER DERATING CURVE PIG, 3 ! DIME N 3IG N 3 'INCHEC' T H13 DRAWING AND THE INFORMATION 13 THE -
OCR Scan
13TEP DE35F 05Y-103G
Abstract: R@25C=1 000 DHMC +/-17. NT E = - 3 . 17./C 3353 ⡠F'ERATING RANGE : -55 TE 150 C 3TDPAGE RANGE¡-65 TG 150 C ^THERMAL TIME CGNGTANT:8 EEC, MAX * Ii I 5 3 I R A T I G N G G N 3 T A N T : 3 m W / 3 M IN POWER RATING :, 135WG35 G., DERATE TG 135 ^Ae Tested per- MIG-R-33648 May vo.ry dependent on mount i ng 1 0 0 LL Ld ⡠LL 0 \ 35 135 TEMPERATURE 03.' FIG, 1: PERFORMANCE CHARACTER I 3TI C3: RIG, 3 POWER DERATING CURVE PIG, 3 ! DIME N 3IG N 3 -INCHEC' T H13 DRAWING AND THE INFORMATION 13 THE -
OCR Scan
05X-1

ns3s

Abstract: A DEGSON DEGSON ELECTRONICS CO., LTD. r- PCTK 6-BEN hvitt (1) t&f- PCRTK/S-BEN 50 (2) D-PCRTK/S-BEN 50 2-e MWfMWHIH EB 2-8 100 (3) ass^si* 3-ti EB 3-8 100 10-e EB 10-8 50 (1) HH.BO.8mm HB TS RTK BEN 50 (5) »fflMH-.® 0.8mm ATS-RTK-BEN 100 (6) «ig» 11 * in 11111 Z8 8 SS/««/««»« [mm] 8.2/61 /2.2mm SS IS i-r/U'/Cj [mm] 58 5/66/63 5mm (NS35:7 5/NS3S:15fNS32> aieEisä« [V]/[A] 500V/41A k V/- 6kV/3 [mm:l / AWG 0 5-6 mm1/ 20-8 AWG wa-K« [mm] 10 mm -1 [Nm] M4
-
OCR Scan
ns3s
Abstract: RGE5C=l00U OHM: + X-EX NT C = - 3 . 1XX3 3353 ⡠F'ERATING RANGE : -55 TE 150 C 3TDPAGE RANGE¡-65 TG 150 C ^THERMAL TIME CGNGTAFIT:8 EEC, MAX * Ii I 5 3 I R A T I G N G G N 3 T A N T : 3 m W / 3 M IN POWER RATING :, 135WG35 G., DERATE TG 135 ^Ae Tested per- MIG-R-33648 May vary dependent on mount i ng 1 0 0 LL Ld ⡠LL 0 \ 35 135 TEMPERATURE '63' FIG, 1: PERFORMANCE CHARACTER I 3TI C3: RIG, E POWER DERATING CURVE FIG, 3 ! DIME N 3IG N 3 'INCHEC' T H13 DRAWING AND THE INFORMATION 13 THE -
OCR Scan
THEFM13TEF 13TEF DE33P 05X-10
Abstract: R@25C=10000 DHMC +/-1V. NT E = - 3 . 97./C 3353 ⡠F'ERATING RANGE : -55 TE 150 C 3TDPAGE RANGE¡-65 TG 150 C ^THERMAL TIME CGNGTANT:8 EEC, MAX * Ii I 5 3 I R A T I G N G G N 3 T A N T : 3 m W / 3 M IN POWER RATING :, 135WG35 G., DERATE TG 135 ^Ae Tested per- MIG-R-33648 May vo.ry dependent on mount i ng 1 0 0 LL Ld ⡠LL 0 \ 35 135 TEMPERATURE 03.' FIG, 1: PERFORMANCE CHARACTER I 3TI C3: RIG, 3 POWER DERATING CURVE PIG, 3 ! DIME N 3IG N 3 -INCHEC' T H13 DRAWING AND THE INFORMATION 13 THE -
OCR Scan
05Y-103F

c3355

Abstract: Ris!£5C = 5 0 0 0 DHMC +/-10X NT E: = - 3 . 97./C 3355: ⡠F'ERATING RANGE : -55 TE 150 C 5TDPAGE RANGE¡-65 TG 150 C ^THERMAL TIME CGNGTANT:8 EEC MAX * Ii I 5 3 I R A T I G N G G N 3 T A N T : 3 m W / 3 M IN POWER RATING :, 135WE35 G., DERATE TG 135 ^Ae Tested per- MIG-R-33648 May vary dependent on mount i ng 1 0 0 LL Ld ⡠LL 0 \ 35 135 TEMPERATURE F C J FIG, 1: PERFORMANCE CHARACTER I 3TI C3: RIG, 3 POWER DERATING CURVE PIG, 3 ! DIME N 3IG N 3 -INCHEC' T H13 DRAWING AND THE INFORMATION
-
OCR Scan
c3355 QT0S05Y-5
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