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TH8056KDC-AAA-008-RE Melexis Microelectronic Integrated Systems Network Interface, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SOIC-8 visit Digikey Buy
MLX92241LSE-AAA-008-SP Melexis Microelectronic Integrated Systems MAGNETIC SWITCH UNIPOLAR TSOT-3 visit Digikey Buy
TH8056KDC-AAA-008-TU Melexis Microelectronic Integrated Systems Network Interface, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SOIC-8 visit Digikey Buy
TH8056KDC-AAA-008-SP Melexis Microelectronic Integrated Systems IC TXRX CAN 8SOIC visit Digikey Buy
MLX92241LSE-AAA-008-RE Melexis Microelectronic Integrated Systems Sensor/Transducer visit Digikey Buy
BK-82 Memory Protection Devices Inc (MPD) CONTACT BATTERY AAA SIZE visit Digikey Buy

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Part : TH8056KDC-AAA-008-RE Supplier : Melexis Manufacturer : Future Electronics Stock : - Best Price : $0.7650 Price Each : $0.7850
Part : TH8056KDC-AAA-008-RE Supplier : Melexis Manufacturer : Future Electronics Stock : 42,000 Best Price : $0.5750 Price Each : $0.5750
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AAA-008

Catalog Datasheet MFG & Type PDF Document Tags

SOT-25 rf

Abstract: DCS-1800 ±.004 1,6+0,1 5XX â 110±.008 2.80 ±0,2 ü à t± © © - Pin Designations â'žâ'žâ'ž+.008 â
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DS52-0006 DCS-1800 DS52-0006TR DS52-0006RTR SOT-25 rf 008MIN 20MIN

2SB861

Abstract: 2SD1136 HITACHI 2SB861 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COLOR TV VERTICAL DEFLECTION OUTPUT COMPLEMENTARY PAIR WITH 2SD1136 ri t r - 1 «â'¢â'¢-0.08 1.27 1.27 14- I 1 â â â .gBB- (JEDEC TO-22ÛAB) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SB861 Unit Collcclor lo base voltage VctiO -2CXJ V Collector to emitter voltage VCEO -I5Û V Emitter to base voltage Vi:no -6 V Collector current ic _2 A Collector peak current ¡Llpçik-I -5 A Collector power dissipation
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SOT-25 rf

Abstract: 114-008  110±.008 2.80 ±0,2 ü à t± © © - Pin Designations â'žâ'žâ'ž+.008 â 043 -.004 1-10$? , I, u
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DS52-0007 DS52-0007-TR DS52-0007-RTR 114-008 2350 004
Abstract: 7 8 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 4 ,19 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. D IST AD REVISIONS 47 LTR DESCRIPTION REVISED PER EC 0S12- 0073-04 R DATE DWN 06FEB04 APVD NK DD â'"A±.008[0.2]' + . 0 0 0 |~ 0 â'"I â'".002 L 0.05 â'" A H O U S IN G : L IQ U ID CONTACTS: GROUND A D I 1 1 l!- ii-W II- 1 l-^ J l-^i- r-â'" I 1 1 1 1 l-hi- L 1 1 1 à -
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09MAY94
Abstract: 7 6 5 4 3 2 D C B A THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. ALL INTERNATIONAL RIGHTS RESERVED. LOC AD DIST 47 REVISIONS LTR AC DESCRIPTION REVISED PER ECO-08-009495 DATE 14JUL08 DWN DH APVD DD â A±.008[0.2} ,+ .000 r+o n '-.002 Lâ'" 0.05 J DDDDDDDDDDonnnnnnnn onnnnnnnnnnnnnooooo oooonoonooooooooooo QMMMMMMMMMMMMMMMMMM, .MMMMMMMMMMMMMMMMMM^ J-JJ-â'"UU,-j, Ji- 3 S Mn0n0n0n0n0n0n0n0n0nBrM â 18 SPACES AT- .208+.001 [5.28+0.03] -025±.008[0.64+0.2] = -
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500T38 000T76 OOOT25

bosch ecu pinout

Abstract: TH8056 KDC A Option Code AAA-008 AAA-008 AAA-014 AAA-014 Packing Form Code TU RE TU RE Legend: Temperature Code
Melexis
Original
TH8056 TH8056KDC-AAA-008-TU bosch ecu pinout TH8056 KDC A bosch ecu diagrams bosch ecu BOSCH ECU voltage line smd 8 pin package GMW3089 J2411 SOIC150M XXX-008 XXX-014

D472A

Abstract: transistor B754 Temperature Code K K K K Package Code DC DC DC DC Option Code AAA-008 AAA-008 AAA-014 AAA
Melexis
Original
D472A transistor B754 b754 transistor 7292B ecu bosch 7.4.4 89ABCD9E7 ISO14001
Abstract: 19 B0 18 1 aaa-008845 aaa-008844 Fig 2. Logic symbol Fig 3. IEC logic symbol , 22 2 23 1 B0 B1 B2 B3 B4 B5 B6 B7 13 14 15 aaa-008846 Fig 1. Logic , tW tW tPLH tPHL VOH VM An or Bn VM VOL aaa-008847 See Table 9 for measurement , HIGH-to-OFF OFF-to-HIGH VM GND outputs enabled outputs disabled outputs enabled aaa-008849 , GND aaa-008 See Table 9 for measurement points The shaded areas indicate when the input is NXP Semiconductors
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74LVT2952-Q100 AEC-Q100 JESD78 MIL-STD-883 74LVT2952
Abstract: EN3 (BA) G1 1C5 EN4 (AB) G2 2C6 3 6D 1 1 5D 4 7 6 5 4 3 2 1 aaa-008845 8 aaa-008844 Fig 2 , CPBA OEBA 14 15 aaa-008846 Fig 1. Logic diagram 74LVT2952 All information provided in , 14 CPBA 13 CEBA aaa-008843 CPAB 10 CEAB 11 GND 12 Fig 4. Pin configuration 74LVT2952 , . Waveforms 1/fmax VI CPBA or CPAB GND tW tPHL VOH An or Bn VOL aaa-008847 VM tW VM tPLH VM VM , GND outputs enabled outputs disabled outputs enabled aaa-008849 VM tPZL VM VX tPZH VY VM NXP Semiconductors
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JESD22-A114E JESD22-A115-A
Abstract: current as a function of on-state voltage aaa-008352 1.6 VGT aaa-008371 103 dVD/dt (V/µs , cathode resistor of 1 kΩ aaa-008370 10 Ptot (W) 8 105 Tmb(max) (°C) 109 a = 1.57 1.9 , . All rights reserved 3 / 13 BT258S-800R NXP Semiconductors Logic level thyristor aaa-008368 10 IT(RMS) (A) 8 aaa-008369 25 I T(RMS ) (A) 20 111 °C 6 15 4 10 2 , 50 Hz; Tmb = 111 °C RMS on-state current as a function of surge duration; maximum values aaa-008345 NXP Semiconductors
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Abstract: A NPN low VCEsat (BISS) transistor aaa-008216 103 aaa-008217 3 IB (mA) = 21 (1 , DC current gain as a function of collector current; typical values aaa-008218 1.2 aaa-008219 , PBSS4230QA NXP Semiconductors 30 V, 2 A NPN low VCEsat (BISS) transistor aaa-008220 1 aaa-008221 , READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code , a function of collector current; typical values aaa-008222 103 Fig. 13. Collector-emitter NXP Semiconductors
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PBSS5230QA AEC-Q101
Abstract: Trench MOSFET aaa-008889 16 ID (A) 4.5 V 10 V 12 aaa-008890 10-3 ID (A) 4.0 V , , N-channel Trench MOSFET aaa-008905 12 aaa-008897 2 a ID (A) 1.5 8 1 4 Tj = 25 , 30 V, N-channel Trench MOSFET aaa-008875 102 lD (A) 10 tp = 10 µs tp = 100 µs 1 , rights reserved 4 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008918 , ; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 NXP Semiconductors
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Abstract: capacitive recovery aaa-008336 120 ID (A) aaa-008335 20 RDSon (mΩ) 16 90 12 60 8 30 , NextPowerS3 Technology VGS (V) aaa-008338 10 aaa-008339 104 C (pF) 8 Ciss Coss 103 , Semiconductors N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology aaa-008332 , base temperature aaa-008333 103 Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10 DC , LFPAK56 using NextPowerS3 Technology ID (A) aaa-008334 80 4.5 V VGS = 3 V 2.8 V 3V NXP Semiconductors
Original
PSMN3R0-30YLD
Abstract: D E F G H aaa-008364 Transparent top view VDD PIO3_2 PIO1_11/AD7 PIO1_4/AD5 NXP Semiconductors
Original
LPC1110/11/12/13/14/15 RS-485/EIA-485 LPC111 LPC1100 LPC1100L LPC1100XL
Abstract: K/W aaa-008477 aaa-008476 Fig. 4. PCB layout for thermal resistance junction to ambient , ) includes capacitive recovery aaa-008400 60 10 V [1] 4.5 V 3.5 V aaa-008401 30 RDSon , ) aaa-008392 50 aaa-008402 48 RDSon (mΩ) 40 2.8 V 3V 3.5 V 36 30 24 20 , using NextPowerS3 Technology VGS (V) aaa-008394 10 aaa-008395 104 C (pF) 8 103 6 , level MOSFET in LFPAK33 using NextPowerS3 Technology ID (A) aaa-008398 60 03aa16 120 NXP Semiconductors
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PSMN7R5-30MLD

NTAG216

Abstract: NTAG215 , COMPATIBILITY_WRITE (4 Byte) GET_VERSION READ_SIG READ_CNT memory operations aaa-008072 Remark: In all , Dynamic lock bytes Configuration pages PACK RFUI aaa-008087 Fig 4. Memory organization , Configuration pages RFUI aaa-008088 Fig 5. NTAG213_215_216 Product data sheet COMPANY PUBLIC , bytes RFUI Dynamic lock bytes Configuration pages PACK RFUI aaa-008089 Fig 6 , RFUI MSB bit 7 6 5 4 3 2 1 0 aaa-008090 Fig 9. NTAG213 Dynamic lock
NXP Semiconductors
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NTAG215 NTAG216 NTAG213/215/216 NTAG21 ISO/IEC14443
Abstract: MOSFET in LFPAK56 using NextPowerS3 Technology 03na19 120 Pder (%) aaa-008621 500 ID (A NXP Semiconductors
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PSMN0R9-30YLD
Abstract: © logic level MOSFET in LFPAK56 using NextPowerS3 Technology 03na19 120 Pder (%) aaa-008639 , ambient Fig. 5 - 50 - K/W Fig. 6 - 125 - K/W Zth(j-mb) (K/W) aaa-008640 NXP Semiconductors
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PSMN1R2-30YLD

AH1306

Abstract: aaa-008446 (1) Actual capacitance value must be a least 1.76 F with 5 V DC offset (recommended
NXP Semiconductors
Original
AH1306 UJA1163 ISO11898
Abstract: ) transistor aaa-008111 103 IB (mA) = -50 -45 -40 IC (A) (1) hFE aaa-008112 -2.5 , gain as a function of collector current; typical values aaa-008113 -1.2 aaa-008114 -1.2 , aaa-008115 -1 aaa-008116 -1 VCEsat (V) VCEsat (V) -10-1 (1) -10-1 (2) (3 , MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary , . Collector-emitter saturation voltage as a function of collector current; typical values aaa-008117 103 Fig NXP Semiconductors
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PBSS5260QA PBSS4260QA

sem 2106 inverter

Abstract: 4502c GND aaa-008 See Table 9 for measurement points The shaded areas indicate when the input is
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sem 2106 inverter 4502c sem 2106 TC19G060 TC15G008 TC17G005 TC15G TC17G TC19G 100MH 120MH J22587
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