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Part : TPCA8A11-H Supplier : Toshiba Manufacturer : Chip One Exchange Stock : 2,824 Best Price : - Price Each : -
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A8A11

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 29â"16 29â"16 35â"8 3 1 5 â"8â'"11 UNC 1.152 .743 .414 .162 3 213â"16 23â"16 21â"4 3 1 5 â"8â'"11 UNC 1.152 .743 .743 .464 4 23â"16 37â"64 31â"2 3 1 5 â"8â'"11 UNC 1.152 .743 1.152 .743 6 213â"16 31â"2 3 1 5 â"8â'"11 Thomas & Betts
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PAE-3921-9-2 PAE-9941-9 PAE-3931-9-2 PAE-3939-9-2 PAE-9921-9 PAE-9939-9
Abstract: â"8â'"11 x 11â"2 19â"16 21â"16 11â"2 119â"64 1 15â"16 â"8â'"11 x 11â"2 Thomas & Betts
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SP10SL SP10DL
Abstract: 11â"4 113â"32 113â"16 â"8â'"11 x 11â"2 19â"16 â"8â'"11 x 11â"2 â"4â'"10 x 13â"4 Thomas & Betts
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SP10DS SP10SS
Abstract: "8â'"16 x 11â"8 3 â"8â'"16 x 11â"8 â"2â'"13 x 11â"4 â"2â'"13 x 11â"4 â"8â'"11 x 11â"2 â"8â'"11 Thomas & Betts
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Abstract: 3â"4 â"8â'"11 x 1 â"8â'"11 x 1 â"4â'"10 x 11â"4 3 219 GROUNDING ® Thomas & Thomas & Betts
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IN914

Abstract: W27L520 (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at , [7:0] Program VIH VPP AIN VDP DIN Erase 1 VIH VPE A8&A11 = VIL, A9 = , Voltage (Erase & Erase Verify) VIL VIH VOL VIN = VIL or VIH ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH , =0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address =
Winbond Electronics
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W27L520 IN914 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90

IN914

Abstract: W27E520 mode. One is to raise OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low , VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH VPE , VIH ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X IOL = 2.1 mA VOH IOH = -0.4 mA VHH VPE VPE , Information W27E520 SMART ERASE ALGORITHM 1 Start X=0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V
Winbond Electronics
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W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
Abstract: . One is to raise OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and , Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH , VIL or VIH ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X IOL = 2.1 mA VOH IOH = -0.4 mA VHH , ERASE ALGORITHM 1 Start X=0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Winbond Electronics
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W27LE520

87c510

Abstract: 87C751 .7 87C51 0 P2.0­P2.3 A8­A11 VSS SU00017 Figure 1. Programming Configuration 1998 Jan , .7 4­6MHz XTAL1 0 ENABLE P2.6 XTAL2 0 P2.0­P2.3 A8­A11 VSS SU00019 Figure 2
Philips Semiconductors
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80C51 87C750 87C751 87C752 87c510 free circuit eprom programmer Application Note EPROM Programming 80C51 Family
Abstract: I VCC P1 0 P2.0-P2.3 A8-A11 VSS SU00017 Figure 1. Programming Configuration , 0 P2.0-P2.3 A8-A11 \ r - - Vss -z tr SU00019 Figure 2. Program -
OCR Scan
95H-87C752

IN914

Abstract: W27L520 #OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and all other , ] Program VIH VPP AIN VDP DIN Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH , #OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First
Winbond Electronics
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AD4813
Abstract: (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , AIN AIN X X AIN A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X First command: Addr. = 5555 (hex) Second , ALGORITHM 1 Start X=0 VDD= 6.5V #OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Winbond Electronics
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Abstract: . One is to raise OE /VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and , VIH VIH OE /VPP PIN OTHER ADDRESS X AIN X AIN AIN A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X , = 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First Winbond Electronics
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Abstract: . One is to raise OE /VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and , VIH VPP VPE VPE PIN OTHER ADDRESS AIN AIN X X AIN A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X , = 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First Winbond Electronics
Original
Abstract: . One is to raise #OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and , ADDRESS AIN AIN X X AIN A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X First command: Addr. = 5555 (hex , W27C520 18. SMART ERASE ALGORITHM 1 Start X=0 VDD= 6.5V #OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 Winbond Electronics
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5.5V .22f capacitor

Abstract: IN914 (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH VPE , X=0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse
Winbond Electronics
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5.5V .22f capacitor W27C520S-70 W27C520S-90 W27C520W-70 W27C520W-90

IN914

Abstract: W27E520 (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , ] Program VIH VPP AIN VDP DIN Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH , = 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First
Winbond Electronics
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IN914

Abstract: W27LE520 (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH VPE , OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First
Winbond Electronics
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W27LE520S-70 W27LE520S-90 W27LE520W-70 W27LE520W-90

87c51fc

Abstract: 80C51 family EPROM products .7 87C51 XTAL2 4­6MHz XTAL1 PSEN 1 P2.6 P3.7 0 0 P2.0­P2.3 A8­A11 VSS , P2.0­P2.3 A8­A11 VSS SU00019 Figure 2. Program Verification (030H) = 15H indicates the
Philips Semiconductors
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87c51fc 80C51 family EPROM products 031H 87C451 87C598 87C52

AD4813

Abstract: IN914 (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH VPE First , = 6.5V #OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address =
Winbond Electronics
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AD634

Abstract: D2C12 29â"16 29â"16 35â"8 3 1 5 â"8â'"11 UNC 1.152 .743 .414 .162 3 213â"16 23â"16 21â"4 3 1 5 â"8â'"11 UNC 1.152 .743 .743 .464 4 23â"16 37â"64 31â"2 3 1 5 â"8â'"11 UNC 1.152 .743 1.152 .743 6 213â"16 31â"2 3 1 5 â"8â'"11
-
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SNC710 16MHZ AD634 D2C12 D8D11 AD041 SXR0032A

Dba1 battery

Abstract: Spansion NAND Flash DIE . One is to raise #OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and , ADDRESS AIN AIN X X AIN A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X First command: Addr. = 5555 (hex , W27C520 18. SMART ERASE ALGORITHM 1 Start X=0 VDD= 6.5V #OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10
Spansion
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Dba1 battery Spansion NAND Flash DIE nand flash pcb layout design 137-Ball Flash MCp nand DRAM 137-ball NOR Flash XIP
Abstract: (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X VDE X Erase 2 VIH VPE , X=0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Microchip Technology
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SST39LF010/020/040 SST39VF010/020/040 SST39LF010 SST39LF020 SST39LF040 SST39VF010

HF4.5

Abstract: PolySwitch GF11 (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high , ] Program VIH VPP AIN VDP DIN Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE, A10 = VIH , = 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First
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TS16949 HF4.5 PolySwitch GF11 ASMD125F AHRF050 diode Datasheet Marking HF5 automotive qualification standard PS400 PS400 AEC-Q200
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