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OPA671AP Texas Instruments Wide Bandwidth, Fast Setting Difet(R) Operational Amplifier 8-PDIP -40 to 100 visit Texas Instruments
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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A671 transistor

Catalog Datasheet MFG & Type PDF Document Tags

A671 transistor

Abstract: transistor A671 36 mA (TYP.) · LOW NOISE FIGURE: 3.6 dB (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS A67-1/ SMA67-1 V3 Product Image Description The A67-1 RF amplifier is a discrete hybrid design, which , bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency , is available Ordering Information Part Number A67-1 SMA67-1 CA67-1 Package TO-8 Surface , Transistor Power Dissipation Pd 1.7:1 / 1.7:1 36 2.0:1 / 2.0:1 39 2.0:1 / 2.0:1 41 Junction Temperature Rise
M/A-COM
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A671 transistor transistor A671 A67-1/ MIL-STD-883

A671 transistor

Abstract: transistor A671 A67-1 / SMA67-1 Cascadable Amplifier 10 to 600 MHz Rev. V3 Features Product Image · , WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Description The A67-1 RF amplifier is a discrete hybrid , . This single stage bipolar transistor feedback amplifier design displays impressive performance over a , -883 environmental screening is available. Ordering Information Part Number Package A67-1 TO-8 SMA67 , Junction Temperature Rise Above Case Tjc 51ºC 2.0:1 / 2.0:1 36 184ºC/W Transistor Power
M/A-COM
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CA-671

transistor A671

Abstract: A671 transistor A67-1/SMA67-1 10 TO 600 MHz CASCADABLE AMPLIFIER · HIGH EFFICIENCY: +17.0 dBm (TYP.) OUTPUT POWER @ 36 mA (TYP.) · LOW NOISE FIGURE: 3.6 dB (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO + 15 Volts Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency , Volts +13 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance jc Transistor , Drawings Package Figure Model TO-8 BG A67-1 Surface Mount AA SMA67-1 SMA Connectorized CE
M/A-COM
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A67-1/SMA67-1

Transistor A671

Abstract: STELLEX A67-1/SMA67-1 10 TO 600 MHz CASCADABLE AMPLIFIER · HIGH EFFICIENCY: +17.0 dBm (TYP.) OUTPUT POWER @ 36 mA (TYP.) · LOW NOISE FIGURE: 3.6 dB (TYP.) · WIDE POWER SUPPLY RANGE: +5 Vdc TO + 15 Vdc Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Guaranteed 0° to 50°C ° ° Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation , Data: Vcc = 15 Vdc Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise
Stellex Microwave Systems
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STELLEX

transistor A608

Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , .511 .566 .621 .605 .704 â'"73.5 â'"67.1 â'"60.8 â'"57.9 â'"59.1 â'"67.1 â'"71.3 â
Agilent Technologies
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transistor A608 2300MH MIL-HDBK-217E 5963-2439E

A996 transistor

Abstract: transistor A608 +115°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , .332 .290 .248 .207 .169 .148 .186 .259 .356 .440 .511 .566 .621 .605 .704 â'"73.5 â'"67.1 â'"60.8 â'"57.9 â'"59.1 â'"67.1 â'"71.3 â'"78.6 â'"84.8 â'"91.3 â'"98.9 â'"104.7 â
Teledyne Cougar
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A996 transistor

transistor A431

Abstract: A641 NPN transistor DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES â'¢ Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP , '"63.1 â'"63.8 â'"65.4 â'"66.0 â'"67.1 â'"68.3 â'"69.4 â'"71.4 5 µPA808T V CE = 1 V, IC = 20 , '"59.6 â'"61.2 â'"62.7 â'"63.2 â'"64.9 â'"65.0 â'"67.1 â'"68.2 â'"69.9 â'"71.5 â'"73.3 â'"74.4 â
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transistor A431 A641 NPN transistor TRANSISTOR A107 PA808T-T1 2SC5184

Transistor A671

Abstract: WJ-CA67-1 WJ-A67-1 / SMA67-1 10 to 600 MHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT HIGH EFFICIENCY: +17.0 dBm (TYP.) OUTPUT POWER @ 32 mA (TYP.) LOW NOISE FIGURE: < 4.0 dB (TYP.) WIDE POWER SUPPLY RANGE: +5 Vdc to +15 Vdc A67-1 Outline Drawings 0.200 (5.08) Specifications* Characteristics Typical. Guaranteed 0° to +50°C -54 to +85°C 10-600 MHz 14.0 dB ±0.5 dB 4.3 dB +16.5 dBm 2.0:1 2.0 , Transistor Power Dissipation P d . 0.275 W Junction Temperature Rise Above Case T jc .
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OCR Scan
WJ-CA67-1

A814 transistor

Abstract: A8180 '"55 to +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power , '"34.2 â'"61.3 â'"67.1 â'"81.4 dB 10.505 10.452 10.393 10.405 10.410 10.410 10.426 10.456
Teledyne Cougar
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A814 transistor A8180

transistor et 454

Abstract: A671 transistor uuU A 6 7 - 1 / S M A 6 7 - 1 10 to 600 MHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT HIGH EFFICIENCY: +17.0 dBm (TYP.) OUTPUT POWER @ 36 mA (TYP.) LOW NOISE FIGURE: 3.6 dB (TYP.) WIDE POWER SUPPLY RANGE: +5 Vdc to +15 Vdc A67-1 O utline D raw ings Specifications* Characteristics Typical. Guaranteed 0° to +50°C -54 to +85°C 10-600 MHz 14.0 dB ±0.6 dB 4.3 dB , D ata: V cc = 15 V dc Thermal Resistance 0jc . 184°C/W Transistor
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OCR Scan
transistor et 454 transistor BC 102 transistor bc 132 50-OHM J1-4401

A1757

Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , 109.6 75.1 23.5 â'"12.3 â'"34.2 â'"51.3 â'"67.1 â'"81.4 dB 10.505 10.452 10.393 10.405
Teledyne Cougar
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A1757
Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 â'¢ High fT 1.25±0.1 6 3 µPA804T Loose products (50 PCS) Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 , '"49.5 â'"51.0 â'"52.7 â'"54.2 â'"55.6 â'"57.3 â'"58.9 â'"60.4 â'"62.3 â'"64.5 â'"67.1 â'"69.4 â -
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PA804T-T1
Abstract: '"62 to +150°C +125°C 0 θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"34.2 â'"61.3 â'"67.1 â'"81.4 dB 10.505 10.452 10.393 10.405 10.410 10.410 10.426 10.456 Agilent Technologies
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2000MH 5963-3240E 5963-2446E

a1420 1012

Abstract: MARKING A591 Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , .90 .90 .90 .90 .90 â'"73.8 â'"67.1 â'"64.4 â'"58.4 â'"53.7 â'"52.0 â'"52.6 â'"53.9 â
Teledyne Cougar
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a1420 1012 MARKING A591
Abstract: 8 800 1200 Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 23.5 â'"12.3 â'"34.2 â'"51.3 â'"67.1 â'"81.4 dB 10.505 10.452 10.393 10.405 10.410 Agilent Technologies
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5963-2490E

hp 8513

Abstract: A586 Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , .89 .90 .90 .90 .90 .90 .90 .90 .90 .90 .90 â'"73.8 â'"67.1 â'"64.4 â'"58.4 â
Agilent Technologies
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hp 8513 A586 500MH 5963-2531E
Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , 119.3 110.2 95.5 67.1 26.7 â'"1.8 â'"23.5 â'"43.9 â'"67.1 â'"91.7 â'"115.7 â'"139.4 â Teledyne Cougar
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PP-38
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , '"45.3 â'"67.1 â'"86.6 â'"104.4 â'"118.5 â'"131.4 â'"142.6 â'"152.1 â'"160.2 â'"167.4 â Renesas Electronics
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transistor A1046

Abstract: A1046 +100°C 5.0 4.5 4.0 0 1 Thermal Characteristics θJC Active Transistor Power Dissipation , '"7.511 â'"8.626 â'"9.017 S12 Ang 159.5 135.7 112.5 87.7 62.4 34.0 4.4 â'"22.9 â'"47.3 â'"67.1
Agilent Technologies
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transistor A1046 A1046 A1615 TRANSISTOR a1199 400MH 5963-2563E
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , '"63.1 â'"63.8 â'"65.4 â'"66.0 â'"67.1 â'"68.3 â'"69.4 â'"71.4 5 µPA808T V CE = 1 V, IC = 20 , '"59.6 â'"61.2 â'"62.7 â'"63.2 â'"64.9 â'"65.0 â'"67.1 â'"68.2 â'"69.9 â'"71.5 â'"73.3 â'"74.4 â Renesas Electronics
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