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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

A473 transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor A1036

Abstract: A1019 TRANSISTOR Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"27.5 â'"37.5 â'"47.3 â'"57.0 â'"66.6 â'"76.2 â'"85.7 â'"95.2 â'"104.9 â'"144.5 â'"124.2 â , 14.4 5.7 â'"1.7 â'"8.3 â'"13.9 â'"18.9 â'"24.1 â'"29.0 â'"33.6 â'"38.3 â'"42.5 â'"47.3 â
Teledyne Cougar
Original

panasonic minas

Abstract: JL04HV-2E22-22PE A4-51 MQMA A4-59 MSMA A4-63 MDMA A4-67 MGMA A4-73 MFMA A4-77 MHMA , MGMA092P1â¡ A4-73 MDMA Middle inertia MGMA Middle inertia 2000 1000 MFMA Middle inertia 400 , MDDDT5540 MGMA092S1â¡ A4-73 MFECA MFMA042S1â¡ A4-77 0ï¼ï¼0ESE MFECA 0ï¼ï¼0ESD MCDDT3520 , -71 MDMA752S1â¡ A4-71 MGDDTC3B4 G-frame 900 MGMA092P1â¡ A4-73 MGMA092S1â¡ A4-73 MDDDT5540 D-frame MGMA202S1â¡ A4-73 MFECA MGMA302S1â¡ A4-75 0ï¼ï¼0ESE 4500 MGMA202P1â¡ A4-73 MFECA
Panasonic
Original
panasonic minas JL04HV-2E22-22PE Service manual Servo Driver Panasonic ISO14001 ISO9001

DV0P197

Abstract: DV0P1972 A4-51 MQMA A4-59 MSMA A4-63 MDMA A4-67 MGMA A4-73 MFMA A4-77 MHMA , MDMA102P1â¡ A4-67 MDMA152P1â¡ A4-67 MDMA102S1â¡ A4-67 MDMA152S1â¡ A4-67 900 MGMA092P1â¡ A4-73 , MGMA092S1â¡ A4-73 MFMA042P1â¡ A4-77 MFMA152P1â¡ A4-77 MHMA052P1â¡ A4-81 MHMA102P1â¡ A4 , -71 MDMA502P1â¡ A4-71 MDMA402S1â¡ A4-71 MDMA502S1â¡ A4-71 MDMA752P1â¡ A4-71 MGMA092P1â¡ A4-73 MGMA202P1â¡ A4-73 MFECA MGMA302P1â¡ A4-75 0ï¼ï¼0ESD MGMA452P1â¡ A4-75 MDMA752S1â¡ A4
Panasonic
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DV0P197 DV0P1972 japan servo KH 56 lm MUMA012P31N MUMA012P32N MUMA012P34N MUMA012P41N MUMA012P42N MUMA012P44N

transistor A1046

Abstract: A1046 +100°C 5.0 4.5 4.0 0 1 Thermal Characteristics θJC Active Transistor Power Dissipation , '"7.511 â'"8.626 â'"9.017 S12 Ang 159.5 135.7 112.5 87.7 62.4 34.0 4.4 â'"22.9 â'"47.3 â
Agilent Technologies
Original
transistor A1046 A1046 A1615 TRANSISTOR a1199 400MH MIL-HDBK-217E 5963-3240E 5963-2563E
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , â'"3.0 â'"8.4 â'"13.5 â'"18.2 â'"23.1 â'"27.8 â'"32.6 â'"37.6 â'"42.3 â'"47.3 â'"52.5 â Teledyne Cougar
Original

transistor A1277

Abstract: A-1451 '"55 to +85°C â'"62 to +150°C +125°C Thermal Characteristics θJC Active Transistor Power , 0.147 0.160 0.208 0.290 0.395 0.506 0.615 0.781 0.872 0.911 0.925 â'"45.0 â'"47.3 â
Teledyne Cougar
Original
transistor A1277 A-1451 a1451 SM-45 MIL-HDBK-217F 6061-T6 MIL-G-5541C

transistor a1413

Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"27.8 â'"32.6 â'"37.6 â'"42.3 â'"47.3 â'"52.5 â'"57.4 â'"62.7 â'"6.9.0 â'"73.4 â'"79.3 â
Agilent Technologies
Original
transistor a1413 1000MH 5963-2527E
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '31.8 â'41.7 â'47.3 â'49.1 â'49.4 â'51.0 â'53.6 â'56.8 â'60.1 â'63.9 â'69.8 â'76.5 â , 0.153 0.146 0.136 â'26.3 â'38.7 â'45.3 â'48.1 â'48.2 â'47.3 â'48.3 â'50.7 â Renesas Electronics
Original
PU10103EJ01V0DS
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '42.8 â'45.3 â'47.3 â'49.2 â'50.9 â'52.3 â'53.6 â'54.7 â'56.3 â'57.2 â'58.3 â'59.2 â , '45.5 â'46.6 â'47.3 â'47.9 â'48.8 â'50.1 â'52.0 â'53.8 â'56.2 â'58.0 â'60.2 â'62.0 â Renesas Electronics
Original
PU10067EJ01V0DS

sn55472

Abstract: SN55471 tWith output transistor base connected externally to output of gate. description Series 55470/75470 , unless otherwise specified. 2. This is the voltage between two emitters of a multiple-emitter transistor , only) C - AG (gate and transistor) Resistor values shown are nominal. electrical characteristics ,   ^Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. gates , probe and Jig capacitance. FIGURE 2â'"SWITCHING TIMES, EACH TRANSISTOR (SN55470 AND SN75470 ONLY
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OCR Scan
sn55472 SN55471 SN75474 SNS5474 SN55472/SN75472 sn76470 N6S471 JSN55472 SNS5473 N75474 55450B/75450B SNB6470

transistor a473

Abstract: A473 transistor transistor and termination resistor must be calculated separately. RECOMMENDED OPERATING CONDITIONS , volt. The collector-base junction of the input transistor then becomes forward-biased by .5 volt at , with that of ECL. At the same time, an off transistor cuts off com pletely. Because they are not used , available with nearly equal speed. Gate delays are essentially a single transistor delay because most logic , © © © © © ·© © CERAM IC A473 {WHITE) ©©© 0 ©©@ ^ ©©© _ © © © ·® © © © · © ©_ ©^ ©- 0 ® BRAZED _ Cu-Ag
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OCR Scan
transistor a473 A473 transistor conhex CML ECL compatible chip die npn transistor T-42-11-13 HE2000 10K/KH E2000

A473 transistor

Abstract: transistor a473 of input buffers Power dissipated in the output emitter-follower transistor and termination resistor , transistor then becomes forward-biased by .5 volt at most, a condition termed soft saturation because , transistor cuts off completely. Because they are not used, the additional power of ECL emitter-follower , essentially a single transistor delay because most logic functions are implemented with a single differential , '¢ VEE Pin Ali pinson .100" centers 020 x 45-CHAMFER (3x) CERAMIC A473 (WHITE) Figure 8. PGACPackage
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OCR Scan
A473 CML termination 50 Ohm external termination volt

NEC A1444

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER , '35.2 â'41.5 â'45.1 â'46.4 â'47.3 â'50.3 â'54.8 â'60.2 â'65.8 â'72.5 â'81.4 â'89.7 â
Renesas Electronics
Original
NEC A1444 PU10099EJ01V0DS
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra , '"7.6 â'"10.9 â'"14.5 â'"17.8 â'"21.4 â'"25.2 â'"28.8 â'"32.5 â'"36.3 â'"39.6 â'"43.6 â'"47.3 Renesas Electronics
Original

TL140

Abstract: Frequency Z Load W R jX R jX 2200 2.06 â'"6.08 2.19 â'"4.73 , Regulator Digi-Key LM78L05ACM-LD S2 Transistor Digi-Key BCP5616TA-ND S3
Infineon Technologies
Original
TL140 PTFB211503EL PTFB211503FL H-34288-4/2 H-33288-6
Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation â'¢ 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor , '42.8 â'45.3 â'47.3 â'49.2 â'50.9 â'52.3 â'53.6 â'54.7 â'56.3 â'57.2 â'58.3 â'59.2 â -
Original
PA862TD-T3 P15685EJ1V0DS00 P15685EJ1V0DS

nec A1441

Abstract: A1441 nec developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , 0.277 0.258 0.241 0.224 0.209 0.204 0.202 0.195 â'24.2 â'36.8 â'44.2 â'47.3 â'47.5 â
Renesas Electronics
Original
nec A1441 A1441 nec PU10101EJ01V0DS

TL139

Abstract: c803 Frequency Z Load W R jX R jX 2200 2.06 â'"6.08 2.19 â'"4.73 2170 2.17 , Digi-Key P100ECT-ND S1 Voltage Regulator Digi-Key LM78L05ACM-LD S2 Transistor
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TL139 c803

A1697

Abstract: transistor A431 BFP92A/BFP92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653 13 579 94 9279 3 2 4 BFP92A Marking: 92V Plastic case , ANG deg â'"16.8 â'"47.3 â'"72.7 â'"103.8 â'"121.0 â'"136.4 â'"156.6 â'"173.5 177.2 166.5
Vishay Intertechnology
Original
A1697 transistor A431 BFP92AW 88/540/EEC 91/690/EEC D-74025

transistor a954

Abstract: TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The , .337 .342 â'"15.6 â'"27.6 â'"35.4 â'"40.9 â'"44.5 â'"47.3 â'"49.6 â'"51.6 â'"53.4 â
Renesas Electronics
Original
transistor a954
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