NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AifflH an AMP company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 FH2114 Features • N-Channel Enhancement Mode Device • Meets CECOM Drawing A3012711 • Designed for Frequency Hopping Systems • 30-90 MHz • Lower Capacitances for Broadband Operation • Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage v GS 20 V Drain-Source Current 'os 16 A Power Dissipation 159 W Junction Temperature TJ 200 °c Storage Temperature T 1 ... | OCR Scan |
1 pages, |
FH2114 A3012711 FH2114 abstract |
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| Abstract: AifflH an AMP company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 FH2114 Features • N-Channel Enhancement Mode Device • Meets CECOM Drawing A3012711 • Designed for Frequency Hopping Systems • 30-90 MHz • Lower Capacitances for Broadband Operation • Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage vds 65 V Gate-Source Voltage v gs 20 V Drain-Source Current 'os 16 A Power Dissipation 159 W Junction Temperature tj 200 °c ... | OCR Scan |
1 pages, |
FH2114 J006 A3012711 FH2114 abstract |
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| Abstract: FH2114 FH2114 RF Power MOSFET Transistor 75W, 30-90MHz, 24V M/A-COM Products Released; RoHS Compliant Package Outline Features · · · · · · N-Channel enhancement mode device Meets CECOM drawing A3012711 Designed for frequency hopping systems 30-90 MHz Lower capacitances for broadband operation Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V ... | Original |
1 pages, |
FH2114 GP 841 Diode FH2114 abstract |
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