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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

A26 diode

Catalog Datasheet MFG & Type PDF Document Tags

4709

Abstract: 8000D Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26/00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26/00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26/00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN
Eupec
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4709 8000D KE-01 A26/00

A26 diode

Abstract: diode A26 Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26/00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26/00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26/00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN
Eupec
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A26 diode diode A26

A26 diode

Abstract: SD-50 Rectifier Diode Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N , A26/00 Seite/page 1 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Preliminary Data Seite 3 page 3 , notes. BIP AM / 00-10-23, K.-A. Rüther A26/00 Seite/page 2 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N BIP AM / 00-10-23, K.-A
Eupec
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SD-50 Rectifier Diode 111E-05 405E-01 255E-02

A26 diode

Abstract: 4709N Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26/00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26/00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26/00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN
Eupec
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4709N

A26 diode

Abstract: 4709N Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26/00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26/00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26/00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN
Eupec
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RT9167

Abstract: RT9167A -8 DS9167/A-26 March 2007 www.richtek.com 1 RT9167/A Functional Pin Description Pin Name Pin , DS9167/A-26 March 2007 RT9167/A Absolute Maximum Ratings Input Voltage , DS9167/A-26 March 2007 www.richtek.com 3 RT9167/A Parameter Symbol Test Conditions Min , VOUT is VOUT(NORMAL) - 100mV. www.richtek.com 4 DS9167/A-26 March 2007 RT9167/A Typical , -25 0 25 50 75 Temperature (° C) DS9167/A-26 March 2007 100 125 -50 -25
RichTek Technology
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RT9167 RT9167A marking RT9167 a26 transistor marking a26 A/500 RT9167/A- DS9167/A-26

marking A26

Abstract: optimized for battery power management applications. â'¢ â'"2.6 A, â'"12 V. Applications â'¢ Fast , ID Drain Current â'"2.6 â'"10 A PD Maximum Power Dissipation (Note 1a) 0.5 W , 30 39 54 40 ID(on) Onâ'"State Drain Current VGS = â'"4.5 V, ID = â'"2.6 A VGS = â'"2.5 V , '"4.5 V, VDS = â'"5 V gFS Forward Transconductance VDS = â'"5 V, ID = â'"2.6 A 10 VDS = , , RGEN = 6 â"¦ Gateâ'"Drain Charge VDS = â'"6 V, VGS = â'"4.5 V ID = â'"2.6 A, 2 nC 3
Fairchild Semiconductor
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FDN306P FDN306

A26 diode

Abstract: "¦ ID = â'"2.6 A, 2 nC 3 nC Drainâ'"Source Diode Characteristics and Maximum Ratings IS , optimized for battery power management applications. â'¢ â'"2.6 A, â'"12 V. Applications â'¢ Fast , ID Drain Current â'"2.6 â'"10 A PD Maximum Power Dissipation (Note 1a) 0.5 W , 40 ID(on) Onâ'"State Drain Current VGS = â'"4.5 V, ID = â'"2.6 A VGS = â'"2.5 V, ID = â , '"5 V gFS Forward Transconductance VDS = â'"5 V, ID = â'"2.6 A 10 VDS = â'"6 V, f =
Fairchild Semiconductor
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Abstract: light emitting diode lamps fabricated with TSN (transparent substrate nitrogen) technology. The LG , ^DOM 645 Sym 40 AÃ" 35 2P < VF vF !R 70 70 1.6 2.0 (¿2.0) (£2.6) 0.01 0.01 , 150 45 25 22 nm 70 2.0 (£2.6) 0.01 (£10) 70 2.0 (£2.6) 0.01 (£10) 70 2.0 (£2.6) 0.01 (*10) 70 2.0 (£2.6) 0.01 (£10) Deg. V V jjA pA 8 10 300 -
OCR Scan
3360-DG 3360-F 3360-FJ 3360-G 3360-HL 3360-J

Relay

Abstract: 0 â'" With Diode (DC coil only) RH1B-UD 0 RH1V2-UD 0 DC6V, DC12V, DC24V, DC48V, DC110V With Indicator and Diode (DC coil only) RH1B-ULD 0 â'" DC12V, DC24V, DC48V, DC110V , RH2B-UT 0 â'" With Diode (DC coil only) RH2B-UD 0 RH2V2-UD 0 With Indicator and Diode (DC , RH3B-ULC 0 â'" Top Bracket Mounting RH3B-UT 0 â'" With Diode (DC coil only) RH3B-UD 0 â'" With Indicator and Diode (DC coil only) RH3B-ULD 0 â'" Standard RH4B-U 0
IDEC
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Relay

diode ZENER A26

Abstract: ZENER A26 Clear Lens Color Everlight Electronics Co., Ltd. Device Number:DLE-033-A26 http , Current Electrostatic Discharge Everlight Electronics Co., Ltd. Device Number:DLE-033-A26 Symbol IF , Electronics Co., Ltd. Device Number:DLE-033-A26 http\\:www.everlight.com Established date: 09-02-2005 , Number:DLE-033-A26 http\\:www.everlight.com Established date: 09-02-2005 Rev: 2 Page: 4 of 7 , Electro-Optical Characteristics Curves Everlight Electronics Co., Ltd. Device Number:DLE-033-A26 http
EVERLIGHT
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diode ZENER A26 ZENER A26 A26 zener A26 ZENER DIODE T-13/4 334-15/W2C3-1RTB CIE1931 DLE-033-A26

3340

Abstract: , LO 3340 orange and the LY 3340 yellow are premium high efficiency light emitting diode lamps , Forward Voltage VF 2.0 2.0 2.0 2.0 2.0 V (lF=10 mA) (-2.6) (£2.6) (£2.6) (£2.6) (£2.6) V Reverse
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OCR Scan
3340 3340-KN LY3340-JM 3340-MP 3340-LP 3340-M LY3340-L
Abstract: "¦ typ (VGS = â'"10 V, ID = â'"2.6 A) â'¢ Low drive current â'¢ High speed switching â'¢ 4.5 V gate , )Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel , "¦ ID = â'"2.6 A, VGS = â'"10 VNote3 RDS(on) â'" 56 79 mâ"¦ ID = â'"2.6 A, VGS = â , V ID = â'"2.6 A, VDS = â'"10 VNote3 Forward transfer admittance Input capacitance Output , Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Renesas Technology
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Abstract: DESCRIPTIO FEATURES s s s s s s s s s Temperature Compensated Internal Schottky Diode RF , The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is , temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM , 800 400 300MHz 5000MHz 6000MHz 7000MHz 0 â'"30 â'"26 â'"22 â'"18 â'"14 â'"10 â'"6 â'"2 2 , 85°C 400 4 0 â'"30 â'"26 â'"22 â'"18 â'"14 â'"10 â'"6 â'"2 2 RF INPUT POWER (dBm) 8 Linear Technology
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LTC5531 300MH LT5502 400MH LT5503 120MH

idec Ab6-V

Abstract: diode ZENER A26 conditions and load). LED lamp contains a built-incurrent-limiting resistor and a protection diode. LED , right. 2. To order as sub-assembled, see page A-20. 3. For accessories, see page A-26. 4. For , gasket. 3. For accessories, see page A-26. A-20 www.idec.com USA: (800) 262-IDEC or (408 , lamp is included in unit and contains a current-limiting resistor and a protection diode. (External resistor not required.) 4. To order as sub-assembled, see page A-22. 5. For accessories, see page A-26
IDEC
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idec Ab6-V SELECTOR SWITCH idec UZ6-F10 5V buzzer 9mm X 12mm A20 ZENER diode AB6Q-M100 E55996 LR21451 000VAC 317-IDEC

idec Ab6-V

Abstract: DIODE marking A19 and reverse polarity protecction diode. A-26 www.idec.com USA: (800) 262-IDEC or (408 , . LR48366 1. LED lamps contain a built-in current-limiting resistor and reverse polarity protection diode , lamp contains a built-incurrent-limiting resistor and a protection diode. LED's don't "burn out , table at the right. To order as sub-assembled, see page A-20. For accessories, see page A-26. For , . 2. Buttons which are rated IP65 include a waterproof rubber gasket. 3. For accessories, see page A-26
IDEC
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DIODE marking A19 as6-k MT-002 hw 0936 Marking Code A24 DIODE diode A28 MT-101

3340-L

Abstract: 3330-M super-red series and the LY 3340 yellow are premium high efficiency light emitting diode lamps fabricated , (Limits for 50% of Luminous Intensity lv) 50 50 50 Deg. Forward Voltage (lF=10 mA) VF 2.0 (£26) 2 0 (£2.6) 2.0 (52 6) V Reverse Current (Vâ'ž=5 V) I* 0 01 (£10) 0 01 (£10) 0 01 (£10) pA
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OCR Scan
3340-L 3330-M 3340-JM 3330-KN 3330-L 3330-LP

KV1837KTR-G

Abstract: KV1837 KV1837 3V Series VCD for Communications Equipment 3VVCD Feature Very Low Voltage Operation: VOP=1.0 to 3.0V : VOP=1.0~3.0V Excellent Linearity of the C-V Curve C-V Extra Large Capacitance Ratio: A=2.6 to : A=2.6~ Reverse Voltage VR=28V VR=28V IF=7mA Forward Current IF=7mA Operating Temp. Range TOP=-55 to +85°C TOP=-55~+85°C Electrical Characteristics Part Name VR.MAX Capacitance(pF , 2.9 1/3 1.2@1.5V,100MHz 4.50 5.50 6.70 3 * Diode Capacitance measured with Agilent 4279A or
Asahi Kasei Microdevices
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KV1837KTR-G KV1837KTR 100MH 4279AOSC 4291B

zl58

Abstract: marking 3L2 diode Auxiliary contact blocks ­ Standard Maximum number of contact blocks Positioning 4 blocks: A9 ­ A26 , blocks: A45 ­ A110 AE45 - AE110 AF45 - AF110 CAL5-11 CA5-10 A9 ­ A26-40-00 A30 ­ A110 Front , A110 AE45 - AE110 AF45 - AF110 Front mounting (single pole) 4 blocks: A9 ­ A26 AE9 ­ AE26 , Type Main poles Built-in auxiliary contacts A9 ­ A26 A9 ­ A26 A9 ­ A26 A9 ­ A26 AE9 ­ AE26 AL9 ­ AL26 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ A9 ­ A16 A9 ­ A26 ­ 3 0 ­ 2 2 ­ 3 0 ­
ABB Control
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CA5-22E CA5-40N CAL18-11 AL26-40-00 zl58 marking 3L2 diode DIODE 3L2 abb CA5-10 AF460 A26-40-00 A40-30-10 AL40-30-10 AE9-AE45 AF145-AF1650 CA5-01
Abstract: applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector , optimized for operation from a single lithium-ion cell or 3xNiMH. Internal Schottky Diode RF Detector , Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown , 2.7V to 6V â'"28 to 18 â'"26 to 18 â'"24 to 16 â'"22 to 16 dBm dBm dBm dBm RFIN Input , "¦ SERIES TERMINATION â'"40°C 25°C 85°C 1000 1000 100 â'"32 â'"26 â'"20 â'"14 â'"8 â Linear Technology
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LTC5505-1/LTC5505-2 5505-X LTC5505-1 LTC5505-2 LTC3405/ LTC3405A
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