NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (MRS) (EMRS) (1 + 2 = RDA + MRS) RDA MRS RDA RDA (CLK ) LAL MRS A0~A13BA0~BA2 MRS BA0 ... | Original |
47 pages, |
TC59LM906AMG-37 TC59LM906AMG BGA64 BA2A1 LAL 2.25 LA2 DT2 TC59LM906AMG-37 abstract |
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| Abstract: TC59LM836DKG-33 TC59LM836DKG-33,-40 MOS CMOS 288M FCRAM2 - 2,097,152 Ã- 4 Ã-36 TC59LM836DKG TC59LM836DKG CMOS 301,989,888 (FCRAMTM)TC59LM836DKG TC59LM836DKG 2,097,152 4 36bit DS/QS 600M / FCRAMTM DDR SDRAM TC59LM836DKG TC59LM836DKG TC59LM836DKG TC59LM836DKG 4.5 ns 5.0 ns CL = 5 3.75 ns 4.5 ns CL = 6 CLK () -40 CL = 4 tCK -33 3.33 ns 4.0 ns 22.5 ns 25 ns tRC / () tRAC () 22.5 ns 25 ns IDD1S () () 360 mA 340 mA lDD2P () () ... | Original |
65 pages, |
TC59LM836DKG-33 TC59LM836DKG TC59LM836DKG-33 abstract |
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| Abstract: TC59LM836DKB-33 TC59LM836DKB-33,-40 MOS CMOS 288M FCRAM2 - 2,097,152 Ã- 4 Ã-36 TC59LM836DKB TC59LM836DKB CMOS 301,989,888 (FCRAMTM)TC59LM836DKB TC59LM836DKB 2,097,152 4 36bit DS/QS 600M / FCRAMTM DDR SDRAM TC59LM836DKB TC59LM836DKB TC59LM836DKB TC59LM836DKB 4.5 ns 5.0 ns CL = 5 3.75 ns 4.5 ns CL = 6 CLK () -40 CL = 4 tCK -33 3.33 ns 4.0 ns 22.5 ns 25 ns tRC / () tRAC () 22.5 ns 25 ns IDD1S () () 360 mA 340 mA lDD2P () () 95 m ... | Original |
65 pages, |
TC59LM836DKB-33 TC59LM836DKB TC59LM836DKB-33 abstract |
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| Abstract: Correlation between 60x address bus and 106R4/SDMA 106R4/SDMA signals for 64-Mbit devices. Q: Figure 6-23 on page 6-41 of the 106 UM shows SDRAM address multiplexing for the 106 Rev 3.0 (16 Mbit devices), but the 106 Rev 4.0 Supplement does not show memory address muxing for 64-Mbit devices. What is the correlation between 60x address bus and SDMA signals for 64-Mbit devices for 106 Rev 4.0? A. Section 6.4.2 and Figure 6-23 are incorrect. We will update the manual errata. The following describes ... | Original |
2 pages, |
MPC106 transistor A7 106R4/SDMA SDMA10 SDMA11 SDMA12 A13/BA0 A12/BA1 A10/AP 106R4/SDMA abstract |
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| Abstract: White Electronic Designs W3HG64M72EER-PD4 W3HG64M72EER-PD4 512MB 512MB Â 64Mx72 DDR2 SDRAM REGISTERED, SO-RDIMM, w/PLL FEATURES DESCRIPTION Registered 200-pin (SO-RDIMM), Small-Outline dual in-line memory module The W3HG64M72EER W3HG64M72EER is a 64Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of nine 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-RDIMM FR4 substrate. Support ECC detection and correction Fast data transfer rates: ... | Original |
13 pages, |
PC2-6400 PC2-5300 PC2-3200 W3HG64M72EER-PD4 512MB W3HG64M72EER-PD4 abstract |
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| Abstract: ARM PrimeCell MultiPort Memory Controller (PL176 PL176) TM Revision: r0p1 Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved. ARM DDI 0269A ARM PrimeCell MultiPort Memory Controller (PL176 PL176) Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved. Release Information The following changes have been made to this document. Change history Date Issue Change June 2003 A First release Proprietary Notice Words and logos ma ... | Original |
528 pages, |
PL176 MT48LC4M16A2 MT46V8M16 micron NAND FLASH INTERCONNECT 128M DDR SDR SDRAM samsung 0 TIC 122 Transistor datasheet MT46V16M16 ELPIDA 512MB NOR FLASH PL176 abstract |
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| Abstract: TM16SM64JBN TM16SM64JBN 16777216 BY 64BIT 64BIT SYNCHRONOUS DYNAMIC RAM MODULE SODIMM SMMS704 SMMS704 - MAY 1998 D Organization: 16 777 216 x 64 Bits D Single 3.3-V Power Supply D Read Latencies 2 and 3 Supported D Support Burst-Interleave and (±10% Tolerance) Burst-Interrupt Operations D D D D D Burst Length Programmable to D Memory Module (SODIMM) Without Buffer for Use With Socket Uses Sixteen 64M-Bit Synchronous Dynamic RAMs (SDRAMs) (8M Ã- 8-Bit) Memory Chips Assembled in Board-On ... | Original |
12 pages, |
TMS664814 TM16SM64JBN 64BIT SMMS704 TM16SM64JBN abstract |
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| Abstract: TM8SK64JPN TM8SK64JPN 8388608 BY 64BIT 64BIT SYNCHRONOUS DYNAMIC RAM MODULE SODIMM SMMS717 SMMS717 - JULY 1998 D Organization: D D D D D D D D Read Latencies 2 and 3 Supported D Support Burst-Interleave and - TM8SK64JPN TM8SK64JPN . . . 8 388 608 x 64 Bits Single 3.3-V Power Supply (±10% Tolerance) Designed for 66-MHz 4-Clock Systems JEDEC 144-Pin Small Outline Dual-In-Line Memory Module (SODIMM) Without Buffer for Use With Socket Uses Eight 64M-Bit Synchronous Dynamic RAMs (SDRAMs) (8M Ã- 8-Bit) in Plas ... | Original |
13 pages, |
TMS664814 TM8SK64JPN 64BIT SMMS717 TM8SK64JPN abstract |
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| Abstract: White Electronic Designs WV3HG264M64EEU-D6 WV3HG264M64EEU-D6 ADVANCED* 1GB Â 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 240-pin, dual in-line memory module The WV3HG264M64EEU WV3HG264M64EEU is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density module. This memory module consists of sixteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate. Fast data transfer rates: PC2-6400 PC2-6400*, PC2-5300 PC2-5300*, PC2-4200 PC2-4200 and PC2-3200 PC2-3200 Utilizes 800*, 667*, 533 and 40 ... | Original |
11 pages, |
WV3HG264M64EEU-D6 PC2-6400 PC2-5300 PC2-3200 WV3HG264M64EEU-D6 abstract |
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| Abstract: White Electronic Designs WV3HG264M72EEU-D6 WV3HG264M72EEU-D6 ADVANCED* 1GB Â 2x64Mx72 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 240-pin, dual in-line memory module (DIMM) The WV3HG264M72EEU WV3HG264M72EEU is a 2x64Mx74 Double Data Rate DDR2 SDRAM high density module. This memory module consists of eighteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate. Fast data transfer rates: PC2-6400 PC2-6400*, PC2-5300 PC2-5300*, PC2-4200 PC2-4200 and PC2-3200 PC2-3200 Utilizes 800*, 667*, 53 ... | Original |
11 pages, |
WV3HG264M72EEU-D6 PC2-6400 PC2-5300 PC2-3200 WV3HG264M72EEU-D6 abstract |
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| Abstract: White Electronic Designs WV3HG264M64EEU-D6 WV3HG264M64EEU-D6 ADVANCED* 1GB Â 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 240-pin, dual in-line memory module The WV3HG264M64EEU WV3HG264M64EEU is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density module. This memory module consists of sixteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate. Fast data transfer rates: PC2-6400 PC2-6400*, PC2-5300 PC2-5300*, PC2-4200 PC2-4200 and PC2-3200 PC2-3200 Utilizes 800*, 667*, 533 and 40 ... | Original |
11 pages, |
WV3HG264M64EEU-D6 PC2-6400 PC2-5300 PC2-3200 WV3HG264M64EEU-D6 abstract |
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| Abstract: TM8TU72JPW TM8TU72JPW SYNCHRONOUS DYNAMIC RAM MODULE SMMS713 SMMS713 Â JUNE 1998 D D D D D D D Organization: Â TM8TU72JPW TM8TU72JPW . . . 8 388 608 Ã- 72 Bits Designed for 100-MHz, 72-Bit 4-Clock Systems JEDEC 168-Pin Dual-In-Line Memory Module (DIMM) With Register for Use With Socket TM8TU72JPW TM8TU72JPW - Uses Nine 64M-Bit (8M Ã- 8-Bit) SDRAMs in Plastic Thin Small-Outline Package (TSOP), Two SN74ALVC162836 SN74ALVC162836 20-Bit Universal Bus Drivers in Thin Shrink Small-Outline Package (TSSOP), and One CDC2510 CDC2510 Phase ... | Original |
13 pages, |
TMS664814 TM8TU72JPW SN74ALVC162836DGG SN74ALVC162836 CDC2510 SMMS713 TM8TU72JPW abstract |
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