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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

A1306 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

ks5127

Abstract: IN7100N Deliver Value and Customer Satisfaction ! CONTENTS Company profile Organization Product Scope Product Road map Application Key Advantages Cooperation Worldwide Design center Deliver Value and Customer Satisfaction ! COMPANY PROFILE Name IK Semicon Co., Ltd. Address A-1306, Woolim Lion's Valley, #371-28, Gasan-dong, Geumcheon-Gu, Seoul, Korea (Zip Code : 153-803 , P-N-P ISOLATED COLLECTOR TRANSISTOR ISOPLANER CMOS with LOCOS ISOLATION SI-GATE DOUBLE WELL
IK Semicon
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A1306 transistor

Abstract: transistor a1306 Deliver Value and Customer Satisfaction ! CONTENTS Company profile Organization Product Scope Product Road map Application Key Advantages Cooperation Worldwide Design center Deliver Value and Customer Satisfaction ! COMPANY PROFILE Name IK Semicon Co., Ltd. Address A-1306, Woolim Lion's Valley, #371-28, Gasan-dong, Geumcheon-gu Seoul, Korea Foundation June, 1997 CEO , TRANSISTOR ISOPLANER CMOS with LOCOS ISOLATION SI-GATE DOUBLE WELL PMOS AI-GATE DOUBLE SI-GATE
IK Semicon
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A1943 transistor

Abstract: A1943 Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. â'¢ Typical Wâ'CDMA Performance: â'42 dBc ACPR, 3.55 GHz, 12 Volts , '12.67 0.610 168.03 1.75 0.902 155.63 2.251 41.97 0.030 â'13.06 0.613 167.41
Freescale Semiconductor
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A1943 transistor A1943
Abstract: designed for use at 5 V supply voltage PIN â'¢ Short channel transistor with high transfer , â'150.1 0.52 â'162.8 0.128 137.4 0.480 â'130.6 Table 2 Noise data: VDS = Philips Semiconductors
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BF904A BF904AR BF904AWR

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , '102.6 â'109.9 â'116.9 â'124.1 â'130.6 â'137.4 â'143.8 â'150.2 â'156.1 8.561 8.084
NEC
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transistor A1024 A1712 nec a1232 2SC5761-T2