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DTA114EUBTL ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3F, 3 PIN visit Digikey Buy
DTA114ECAT116 ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SST3, 3 PIN visit Digikey Buy
DDTA114EE-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3 visit Digikey Buy
DDA114EK-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6 visit Digikey Buy
DDTA114EUA-7 Diodes Incorporated Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 visit Digikey Buy
DTA114EEBTL ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3F, 3 PIN visit Digikey Buy

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Part : DTA114EEBHZGTL Supplier : ROHM Manufacturer : element14 Asia-Pacific Stock : 2,875 Best Price : $0.03 Price Each : $0.1320
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Part : DTA114EEBHZGTL Supplier : ROHM Manufacturer : Farnell element14 Stock : 2,875 Best Price : £0.0324 Price Each : £0.1360
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Part : LCA1-14-E Supplier : Panduit Manufacturer : Master Electronics Stock : 1,022 Best Price : $5.14 Price Each : $6.99
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Part : DTA114EKAT146 Supplier : ROHM Manufacturer : New Advantage Stock : 6,000 Best Price : $0.0355 Price Each : $0.0355
Part : LCA1-14-E Supplier : Panduit Manufacturer : Sager Stock : - Best Price : $2.96 Price Each : $3.73
Part : MSSA114E Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : DTA114EM3T5G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 14,100 Best Price : $0.03 Price Each : $0.05
Part : NSBA114EDP6T5G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 11,150 Best Price : $0.06 Price Each : $0.09
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A114E Datasheet

Part Manufacturer Description PDF Type
A114E General Electric Semiconductor Data Handbook 1977 Scan
A114E Harris Semiconductor 1.0A Iout, 500V Vrrm General Purpose Silicon Rectifier Scan
A114E N/A Shortform Semicon, Diode, and SCR Datasheets Scan

A114E

Catalog Datasheet MFG & Type PDF Document Tags

A114B

Abstract: A114D 400 â'" 1N5060 1N.-.2-.6 " GER4004 â .:â .â  1N5625 A15D A115D 500 . A14E â'" â'" A114E â , A114C A114D 2.0 Amps 200-600 Volts A114E THE GENERAL ELECTRIC A114 IS A 2.0 AMPERE, AXIAL-LEADED , , Storage, Tstg A114D A114E A114M 400 400 400 1.0-2.0 -40-85- 3.5 500 500 500 â'" 65°C to +150°C , Microamps. Microamps. Microamps. â'¢ Nanosecs. Nanosecs. I 559 A114B A114C A114D A114E All 4M CIRCUIT , A114B A114C A114D A114E A114M S io â  CYCLES AT «0 CYCLES PER SECOND MAXIMUM NON-REPETITIVE
-
OCR Scan
DT230 A114A-M ge a114d ge A114B A14F A114-B 1N5059-62 1N4245-49 1N5624-27 A14A-P GER4001-7

A114B

Abstract: A114M Y SE A L E D PACKAGE. A114B A114C A114D A114E A114M a b s o lu te m axim u m ratings: (25 , Tem perature Range Operating, Tj Storage, T stg 200 200 200 A114C 300 300 300 - A114D A114E 400 , - Nanosecs. I -Ô0 //YB-IX 559 17 9 0 8- O 7 7294621 A114B A114C A114P A114E A114M P O W E R , A L C H A R A C T E R IST IC S A114C A114D A114E A114M FO R W ARD C H A R A C T E R IS T IC S , 1792 8-09 7294621 A114B A114C A114D A114E A114M P O W E R E X INC 74 DE 172T4t,21 Q
-
OCR Scan
72TML 80ARD 172T4

A114 Series

Abstract: A114A in SEMICONDUCTOR A114 Seríes December 1993 1 A, 50V - 600V Diodes Features â'¢ Glass Passivated Junction â'¢ Fast Recovery Times â'¢ Low Forward Voltage Drop, High-Current Capability â'¢ tow Reverse Current Leakage â'¢ High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E, A114F, and A114M are fast-recovery silicon rectifiers (tRH » 200ns max.) featuring low forward voltage , A114E Maximum Peak (Repetitive) Reverse Voltage .VRRM 50 100 200 300 400 500 Maximum
-
OCR Scan
A114 Series A114 D0204 s0k00n A115M D0-204 S0K00

A114F

Abstract: A114A HARRIS SEMICOND SECTOR bflE J> M 4302E71 00S0314 13b «HAS ¡2 SEMICONDUCTOR A114 Series December 1993 1 A, 50V - 600V Diodes Features â'¢ Glass Passivated Junction â'¢ Fast Recovery Times â'¢ Low Forward Voltage Drop, High-Current Capability â'¢ Low Reverse Current Leakage â'¢ High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E, A114F, and A114M are , Resistive or Inductive Loads (Note 1) A114F A114A A114B A114C A114D A114E A114M UNITS Maximum Peak
-
OCR Scan
43GE271 431T DO-204

A114E

Abstract: DTA114EE transistor (Built-in resistor type) FEquivalent circuit (96-250-A114E) 327 Transistors
ROHM
Original
DTA114EE DTA114EUA DTA114EKA DTA114ESA DTA114ES dta114eu 96-250-A114E DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA

transistor 513

Abstract: DTA114ES = 25_C) (96-454-A114E) 512 Transistors UMB11N / IMB11A FElectrical characteristics
ROHM
Original
transistor 513 a114* transistor transistor a114e Transistors General 96-454-A114E

TRANSISTOR D 1902

Abstract: 1902 transistor be exceeded. * 2 200mW per element must not be exceeded. (96-454-A114E) n o v M 501
-
OCR Scan
TRANSISTOR D 1902 1902 transistor 08P1 UMB rohm 1MB11A SC-88 SC-74 11N/IMB11A 100MH

ge a15a

Abstract: A114A 400 â'" 1N5060 1N.-.2-.6 " GER4004 â .:â .â  1N5625 A15D A115D 500 . A14E â'" â'" A114E â
-
OCR Scan
A115A-M A115F A115A A115B A115C GER4007 ge a15a A15E A15A A15A-N DT23CF GER4001 DT23CA

capacitor huang

Abstract: A114E discharge times are according in standard JESD22- A114E ELECTRONICS TESTING CENTER, TAIWAN Report No
Electronics Testing Center
Original
RF1401D JESD22-A114E capacitor huang 08-09-MAS-131-02 ISO9001

ESS-2000-G365

Abstract: JESD22-A114E discharge times are according in standard JESD22- A114E Classification Criteria All samples used must
Electronics Testing Center
Original
RO3101A ESS-2000-G365 08-09-MAS-131-01
Abstract: (96-250-A114E) 313 Transistors DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA â'¢ A b s o lu te maxim -
OCR Scan
DTA114EE/DTA114EUA/DTA114E KA/DTA114ESA SC-70 SC-59

J2284

Abstract: values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed with respect to GND. Tested in
Texas Instruments
Original
J2284 SN65HVD1050A-Q1 SLLS888 TJA1050 GMW3122 J1939

J2284

Abstract: J1939 °C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed with respect to GND. Tested in accordance
Texas Instruments
Original
CAN J1939 protocol books SN65HVD1050AQDRQ1 SN65HVD1050A

GMW3122

Abstract: SAE J2284 transceiver values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed with respect to GND. Tested in
Texas Instruments
Original
SAE J2284 transceiver 1050AQ

GMW3122

Abstract: 11783 j1939 V All typical values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed
Texas Instruments
Original
11783 j1939 iso 11783 SN65HVD1050AL SN65HVD1050ALQDRQ1 SLLS888A

A114A

Abstract: A114B 400 â'" 1N5060 1N.-.2-.6 " GER4004 â .:â .â  1N5625 A15D A115D 500 . A14E â'" â'" A114E â
-
OCR Scan
A14P A114F GE A14A GER4002 GT230G I3T230B 1N5059 1N42-15 GER4003

A115A

Abstract: A115F 400 â'" 1N5060 1N.-.2-.6 " GER4004 â .:â .â  1N5625 A15D A115D 500 . A14E â'" â'" A114E â
-
OCR Scan
1N5062 1N5624 DT23CH A115E 1N5061 1N424/ GER4005

13002

Abstract: JESD22-A115-A Resistor and discharge times are according in standard JESD22- A114E ELECTRONICS TESTING CENTER
Electronics Testing Center
Original
09-03-MAS-130-02 JESD22-A115-A 13002 SF1141B-2

iso 11783

Abstract: GMW3122 accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , Standard 22 Test Method A114E, SPLIT pin stressed with respect to GND. Tested in accordance JEDEC Standard
Texas Instruments
Original
SN65HVD1040A-Q1 SN65HVD1040AQDRQ1 LOGICSTATE tja1040 SLLS889 TJA1040 SN65HVD1040A

a144* transistor

Abstract: a124* transistor maximum ratings (Ta = 25_C) FExternal dimensions (Units: mm) (96-454-A114E) 512 Transistors
-
Original
a144* transistor a124* transistor C144* transistor C124* transistor transistor a41 C124E 94S-389-A41 94S-398-C41 FMG13 94S-849-A143T 94S-877-C143T IMT17

P4M transistor

Abstract: AS-016 : SC-72 « ¡ T w't) (2) OUT (3) IN (96-250-A114E) nniim 313 Digital transistors ·S
-
OCR Scan
P4M transistor AS-016 AS016

A114E

Abstract: DTA114EL in SEMICONDUCTOR A114 Seríes December 1993 1 A, 50V - 600V Diodes Features â'¢ Glass Passivated Junction â'¢ Fast Recovery Times â'¢ Low Forward Voltage Drop, High-Current Capability â'¢ tow Reverse Current Leakage â'¢ High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E, A114F, and A114M are fast-recovery silicon rectifiers (tRH » 200ns max.) featuring low forward voltage , A114E Maximum Peak (Repetitive) Reverse Voltage .VRRM 50 100 200 300 400 500 Maximum
-
OCR Scan
DTA114ELA DTA114EL

TA114E

Abstract: DTA114ES values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed with respect to GND. Tested in
-
OCR Scan
TA114E transistor ta114e DTA114EK DTA114EA DTA114EU/DTA114EK/DTA114ES/DTA114EF DTA114EL/DTA114EA/DTA114EV

SN65HVD1040A-Q1

Abstract: 1040AQ A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, SPLIT pin
Texas Instruments
Original
1040AQ 6V15W SLLS889B
Abstract: transistor (Built-in resistor type) FEquivalent circuit (96-250-A114E) 327 Transistors Texas Instruments
Original
ISO/TS16949
Abstract: accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , Standard 22 Test Method A114E, SPLIT pin stressed with respect to GND. Tested in accordance JEDEC Standard Texas Instruments
Original
Abstract: °C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E, CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E, Vref pin stressed with respect to GND. Tested in accordance Texas Instruments
Original
Abstract: accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , Standard 22 Test Method A114E, SPLIT pin stressed with respect to GND. Tested in accordance JEDEC Standard Texas Instruments
Original
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