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INA114BG Texas Instruments INSTRUMENTATION AMPLIFIER, 150uV OFFSET-MAX, 1MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 visit Texas Instruments
INA114BUE4 Texas Instruments INSTRUMENTATION AMPLIFIER, 50uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO16, GREEN, SOIC-16 visit Texas Instruments
INA114BU-TR Texas Instruments INSTRUMENTATION AMPLIFIER, 150uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO16 visit Texas Instruments
INA114BU/1KE4 Texas Instruments Precision Instrumentation Amplifier 16-SOIC visit Texas Instruments
INA114BU/1K Texas Instruments Precision Instrumentation Amplifier 16-SOIC visit Texas Instruments
INA114BP Texas Instruments Precision Instrumentation Amplifier 8-PDIP visit Texas Instruments Buy

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Part : INA114BP Supplier : Texas Instruments Manufacturer : Avnet Stock : 3 Best Price : €8.9722 Price Each : €15.1985
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Part : CP4A-114B-108E Supplier : Ohmite Manufacturer : Newark element14 Stock : - Best Price : $68.00 Price Each : $84.67
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Part : INA114BU Supplier : Texas Instruments Manufacturer : RS Components Stock : 2 Best Price : £9.35 Price Each : £9.96
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Part : INA114BU Supplier : Texas Instruments Manufacturer : RS Components Stock : 3 Best Price : £9.35 Price Each : £10.58
Part : CP4A-114B-108E Supplier : Ohmite Manufacturer : Richardson RFPD Stock : - Best Price : $56.94 Price Each : $71.97
Part : INA114BP Supplier : Texas Instruments Manufacturer : TME Electronic Components Stock : 17 Best Price : $11.46 Price Each : $16.29
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Part : INA114BU Supplier : Texas Instruments Manufacturer : element14 Asia-Pacific Stock : 821 Best Price : $11.14 Price Each : $17.60
Part : CP4A-114B-108E Supplier : Ohmite Manufacturer : Farnell element14 Stock : - Best Price : £62.80 Price Each : £74.42
Part : INA114BP Supplier : Texas Instruments Manufacturer : Farnell element14 Stock : 214 Best Price : £7.36 Price Each : £11.22
Part : INA114BU Supplier : Texas Instruments Manufacturer : Farnell element14 Stock : 471 Best Price : £9.25 Price Each : £14.77
Part : CP4A-114B-108E Supplier : Ohmite Manufacturer : Sager Stock : - Best Price : $59.77 Price Each : $82.59
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A114-B Datasheet

Part Manufacturer Description PDF Type
A114B General Electric Semiconductor Data Book 1971 Scan
A114B General Electric Semiconductor Data Handbook 1977 Scan
A114B Harris Semiconductor 1.0A Iout, 200V Vrrm General Purpose Silicon Rectifier Scan
A114B N/A Shortform Semicon, Diode, and SCR Datasheets Scan

A114-B

Catalog Datasheet MFG & Type PDF Document Tags

A114B

Abstract: A114D A114B 1N5624 A15S A115B 250 DT23CH â'" â'" â'" â'" â'" 300 â'" A14C â'" A114C â'" A15C A115C , range â'" * JAN & JANTX types available 65 to -f 165°C. 131 Fast Recovery Rectifier A114B , ) A114B A114C Reverse Voltage ( -65°C to + 150°C, Tj) Working Peak, VRWM Repetitive Peak, V1ÌKm DC,Vr , Microamps. Microamps. Microamps. â'¢ Nanosecs. Nanosecs. I 559 A114B A114C A114D A114E All 4M CIRCUIT , A114B A114C A114D A114E A114M S io â  CYCLES AT «0 CYCLES PER SECOND MAXIMUM NON-REPETITIVE
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OCR Scan
DT230 A114A-M ge a114d ge A114B A14F A114-B 1N5059-62 1N4245-49 1N5624-27 A14A-P GER4001-7

A114B

Abstract: A114M Y SE A L E D PACKAGE. A114B A114C A114D A114E A114M a b s o lu te m axim u m ratings: (25°C unless otherwise specified) A114B Reverse Voltage ( - 6 5 ° C to +150°C, T,) Working Peak, VR W M , - Nanosecs. I -Ô0 //YB-IX 559 17 9 0 8- O 7 7294621 A114B A114C A114P A114E A114M P O W E R , B-C8 7294621 POWEREX INC ~7H D eT | 72TML,S1 D O O l B b l 3 T-Q3-J5 A114B T Y PIC , 1792 8-09 7294621 A114B A114C A114D A114E A114M P O W E R E X INC 74 DE 172T4t,21 Q
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OCR Scan
80ARD 172T4

G2129

Abstract: SOT23-6 MARKING b4 (A114-B) 1500V Charged-Device Model (C101) â'" B Port ±15kV Human-Body Model (A114-B) 1500V
Global Mixed-Mode Technology
Original
G2129 SOT23-6 MARKING b4 SC-70-6 G2129TL1U G2129TB1U G2129TM1U G2129AE1U

A114 Series

Abstract: A114A in SEMICONDUCTOR A114 Seríes December 1993 1 A, 50V - 600V Diodes Features â'¢ Glass Passivated Junction â'¢ Fast Recovery Times â'¢ Low Forward Voltage Drop, High-Current Capability â'¢ tow Reverse Current Leakage â'¢ High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E, A114F, and A114M are fast-recovery silicon rectifiers (tRH » 200ns max.) featuring low forward voltage , For Single Phase, 60Hz, Half-Wave Resistive or Inductive Loads (Note 1) AÌ14F A114A A114B A114C A114D
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OCR Scan
A114 Series A114 D0204 s0k00n A115M D0-204 S0K00

A114F

Abstract: A114 HARRIS SEMICOND SECTOR bflE J> M 4302E71 00S0314 13b «HAS ¡2 SEMICONDUCTOR A114 Series December 1993 1 A, 50V - 600V Diodes Features â'¢ Glass Passivated Junction â'¢ Fast Recovery Times â'¢ Low Forward Voltage Drop, High-Current Capability â'¢ Low Reverse Current Leakage â'¢ High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E, A114F, and A114M are , Resistive or Inductive Loads (Note 1) A114F A114A A114B A114C A114D A114E A114M UNITS Maximum Peak
-
OCR Scan
43GE271 431T DO-204

A114B

Abstract: C101 · ESD Performance Tested Per JESD 22 ­ 2000-V Human-Body Model (A114-B, Class II) ­ 1000 , Per JESD 22 ­ 2000-V Human-Body Model (A114-B, Class II) ­ 1000-V Charged-Device Model (C101
Texas Instruments
Original
TS3A5018 C101 TS3A5018DBQRE4 TS3A5018DBQRG4 TS3A5018DE4

ge a15a

Abstract: A114A A114B 1N5624 A15S A115B 250 DT23CH â'" â'" â'" â'" â'" 300 â'" A14C â'" A114C â'" A15C A115C
-
OCR Scan
A115A-M A115F A115A A115D GER4007 ge a15a A15E A15A A15A-N DT23CF GER4001 DT23CA

YE08

Abstract: txb0108 Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
YE08 txb0108 TXB0108 SCES643D

SCHEMATIC POWER SUPPLY irf840

Abstract: irf840 mosfet drive circuit diagram FB43-101 A114B FB1 C28 100µF 1K R30 D18 3V C23 120µF R31 10K + R17 10K , R2 1K R19 A114B C29 2.2µF 25V TA Q2 IRF840 D16 A114M +12VBS 10 Q1 IRF840 , 1N5408 22 1 D8 Harris RUR860 with AAVID 534202 H/S 23 2 D9, D17 Harris A114B
Harris Semiconductor
Original
PE-51686 P3657A SCHEMATIC POWER SUPPLY irf840 irf840 mosfet drive circuit diagram LM7812 3a TRANSISTOR mosfet IRF840 amidon 43 toroid core ic lm7812 AN9417 HIP5500 36VDC IEC555-2 400VDC F/35V

irf840 mosfet drive circuit diagram

Abstract: OF IC LM7812 100 +12VBS D19 10V R34 1K D17 C32 0.1µF FB43-101 A114B FB1 C28 100µF 1K , 6 U4A 4 +12V 1N4148 2 D12 332 C14 0.001µF 22.1K R2 1K R19 A114B , 33.2 23 2 D9, D17 Intersil A114B 57 1 R27 390/3W 24 1 D11 Intersil
Intersil
Original
OF IC LM7812 Application of irf840 irf840 power supply power supply circuit LM7812 transistor irf840 frequency range AC TO DC BY irf840 1N4372 1N961 MC34262 HIP5600 6PCV02 ICL7667

1N4007 ZENER DIODE

Abstract: diode A14A . 400V,5A. 50V, 5A. FAST DIODE A114A A114B A114C A114D A114F A115A A115B A115C A115D A115F DIODE
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OCR Scan
1N4007 ZENER DIODE diode A14A st4 diac diode diode a15a zener db3 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006

A114N

Abstract: A114A 200 DT230B â'" MM 1N5059 1N4245 â'¢ GER4003 A114B 1N5624 A15B 250 DT230H â'" â'" â'" _ â'" ' â'" â
-
OCR Scan
DT230F A114N MPR12 MPR15 A114F GE A15B mpr10 MPR10-15 M14A-M DT230A GER4002 DT230G
Abstract: (10 sec) Junction Temperature Static Discharge Voltage (As per JEDEC STD22- A114-B) Parameter , - A114-B) Rev. 1 | Page 4 of 8 | www.onsemi.com P2779A Package Information 8-lead (150-mil) SOIC ON Semiconductor
Original

SOT-24

Abstract: yd 803 (A114-B, Class II) ­ 1000-V charged-device model (C101) · Low ON-state resistance (ron) · Control , translation devices · ESD performance tested per JESD 22 ­ 2000-V human-body model (A114-B, Class II) ­ , , Class II · ESD performance tested per JESD 22 ­ 2000-V human-body model (A114-B, Class II) ­ 1000 , tested per JESD 22 18 TS3DV520 HDMI Receiver ­ 2000-V human-body model (A114-B, Class II , tested per JESD 22 ­ 2000-V human-body model (A114-B, Class II) ­ 1000-V charged-device model (C101
Texas Instruments
Original
SOT-24 yd 803 IC DVI/HDMI MUX/DEMUX ANALOG SWITCH 6 CHANNEL SPST ic laptop motherboard TS5A23159A 300-MH A120905 MSP430 SLYB125

TXB0108PWR

Abstract: YE08 Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
TXB0108PWR

TXB0108

Abstract: Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original

TXB0108YZP

Abstract: TXB0108 Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
TXB0108YZP SCES643E ISO/TS16949

TXB010

Abstract: (A114-B) â'" 1000-V Charged-Device Model (C101) â'" B Port â'" ±15-kV Human-Body Model (A114-B) â'" ±8-kV Human-Body Model (A114-B) (YZP Package Only) â'" 1000-V Charged-Device Model (C101) For the RGY package , ) to Revision D Page â'¢ Added ±8-kV Human-Body Model (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
TXB010

84-1 LMI

Abstract: 22-A114-B defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in
Filtronic
Original
FMS2021 22-A114-B 84-1 LMI MIL-STD-1686 MILHDBK-263

TXB0108

Abstract: Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
Abstract: Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features Texas Instruments
Original

TXB0108

Abstract: Model (A114-B) ­ 1000-V Charged-Device Model (C101) ­ B Port ­ ±15-kV Human-Body Model (A114-B) ­ ±8-kV Human-Body Model (A114-B) (YZP Package Only) ­ 1000-V Charged-Device Model (C101) DQS PACKAGE (TOP VIEW) PW , (A114-B) (YZP Package Only) to Features
Texas Instruments
Original
Abstract: (A114-B) â'" 1000-V Charged-Device Model (C101) â'" B Port â'" ±15-kV Human-Body Model (A114-B) â'" ±8-kV Human-Body Model (A114-B) (YZP Package Only) â'" 1000-V Charged-Device Model (C101) For the RGY package , ) to Revision D Page â'¢ Added ±8-kV Human-Body Model (A114-B) (YZP Package Only) to Features Texas Instruments
Original
Abstract: (A114-B) â'" 1000-V Charged-Device Model (C101) â'" B Port â'" ±15-kV Human-Body Model (A114-B) â'" ±8-kV Human-Body Model (A114-B) (YZP Package Only) â'" 1000-V Charged-Device Model (C101) For the RGY package , Revision C (August 2011) to Revision D Page â'¢ Added ±8-kV Human-Body Model (A114-B) (YZP Texas Instruments
Original
Abstract: (A114-B) â'" 1000-V Charged-Device Model (C101) â'" B Port â'" ±15-kV Human-Body Model (A114-B) â'" ±8-kV Human-Body Model (A114-B) (YZP Package Only) â'" 1000-V Charged-Device Model (C101) For the RGY package , ) to Revision D Page â'¢ Added ±8-kV Human-Body Model (A114-B) (YZP Package Only) to Features Texas Instruments
Original
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