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2-1415538-8 TE Connectivity (2-1415538-8) V23047-A1015-A501 visit TE Connectivity
TPS7A1015PYKAR Texas Instruments 300mA Low-Vin Low-Vout Ultra-Low-Dropout Regulator 5-DSBGA -40 to 125 visit Texas Instruments
V23057A 23A101 (5-1393215-5) TE Connectivity (5-1393215-5) V23057-A0023-A101 visit TE Connectivity
HSA10150RJ (1625966-8) TE Connectivity (1625966-8) HSA10 150R 5% visit TE Connectivity
W54-XB2A4A10-15 (6-1423901-0) TE Connectivity (6-1423901-0) W54-XB2A4A10-15=CKTBKR,THERM,PB,QC.250 visit TE Connectivity
HSA1015KJ (1625966-9) TE Connectivity (1625966-9) HSA10 15K 5% visit TE Connectivity

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A1015 Datasheet

Part Manufacturer Description PDF Type
A1015 Fairchild Semiconductor LOW FREQUENCY AMPLIFIER Original
A1015 Hi-Sincerity Mocroelectronics PNP EPITAXIAL PLANAR TRANSISTOR Original
A1015 Panasonic Photo Interrupters Original
A1015 Philips Semiconductors PNP general purpose transistor Original
A1015 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original
A1015 Weitron PNP General Purpose Transistors Original
A1015 Micro Electronics PNP SILICON TRANSISTOR Scan
A1015 Toshiba PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Scan
A1015LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original
A1015LT1 Weitron TRANSISTOR (PNP) Original
A1015LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original

A1015

Catalog Datasheet MFG & Type PDF Document Tags

A1015 gr

Abstract: A1015 y A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value , WEITRON http://www.weitron.com.tw 1/4 14-Feb-06 A1015 ELECTRICAL CHARACTERISTICS (TA=25 C , ://www.weitron.com.tw 2/4 14-Feb-06 A1015 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 14-Feb-06 A1015 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G
Weitron
Original
A1015 gr A1015 y transistor A1015 A1015 TO92 A1015 equivalent br a1015 270TYP

transistor A1015

Abstract: A1015 A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: Excellent hFE Linearity Complementary to C1815 Chip Appearance Chip Size 350um×350um Chip Thickness 210±20um Base 110um×110um Emitter Bonding Pad Size 100um×100um Front Metal Al Backside Metal Au(As) Scribe line width 40um Wafer Size 6 inch Electrical Characteristics
BCD Semiconductor
Original
A1015 PNP TRANSISTOR transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET pnp a1015

A1015 y

Abstract: A1015 ) 1 3 *1 1 *2 2 *2 NEP VR=10 V (W/Hz1/2) 6.5 ×10-15 8.7 ×10-15 *1 6.5 ×10-15 *2 3.6 ×10-15
Hamamatsu Photonics
Original
S7379 S6695-01 S6058 S7547 D-82211 SE-171

M28840/13 and M28840/15

Abstract: M28840/13 'Œ G Dia ± .010 (0.3) â'Œ.765 â'Œ(19.4) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.140 â'Œ(29.0 , ) H Dia ± .010 (0.3) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.203 â'Œ(30.6) â'Œ1.265 â'Œ(32.1 , (0.3) â'Œ.765 â'Œ(19.4) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.140 â'Œ(29.0) â'Œ1.265 â'Œ(32.1
Glenair
Original
M28840/13 M28840/13 and M28840/15 A2329 A1265 MIL-DTL-28840 M28840/15 MS28840/15

a1015 transistor

Abstract: transistor A1015 GR A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PD Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -5 -150 400 125 -55-125 Units V , hFE O 70-140 Y 120-240 GR 200-400 A1015 Transistor(PNP) Typical Characteristics -
-
Original
a1015 transistor transistor A1015 GR Transistor TO-92 A1015 a1015 TRANSISTOR pnp pnp transistor a1015

Realtek RX2

Abstract: 27.145Mhz 100uF 120K 4.7uF 2.2K 103 150 150 MOTOR 8550 104 2.2M 1K 104 A1015 8050 2.2K 8550 A1015 104 8050 1K 9 MOD RX2C ATS302R Fosc=128KHz LX 10 BACK , 302 6 5 4 3 2 1 MOTOR 8550 A1015 A1015 8050 104 8050 Power , A1015 8050 2.2K 8550 A1015 104 8050 1K 9 MOD RX2C ATS302R Fosc=128KHz LX 10 , 7 6 5 4 3 2 1 MOTOR 1K 8550 A1015 A1015 8050 104 8050
Actions Semiconductor
Original
Realtek RX2 27.145Mhz circuit diagram of wireless toy car remote control toy car circuit diagram RX2C 27.145Mhz remote car ATS302T/RX2C 03500035X

A1015 sot-23

Abstract: A1015 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , L H 130-200 200-400 Typical Characteristics A1015 Jiangsu Changjiang
Jiangsu Changjiang Electronics Technology
Original
A1015 sot-23 A1015 BA c1815 SOT-23 ic c1815 equivalent transistor A1015 a1015 ba sot-23

A1015 transistor

Abstract: transistor A1015 TO-92 Plastic-Encapsulate Transistors (PNP) A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base
-
Original
Transistor PNP TO-92 a1015 transistor datasheet

transistor A1015 GR

Abstract: br a1015 A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE
WEJ Electronic
Original
A1015 y equivalent datasheet A1015 gr W transistor A1015 download data sheet A1015 PNP

A1015 gr

Abstract: transistor A1015 GR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO-92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 , Typical Characteristics A1015 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original
transistors a1015

GH11C

Abstract: Unit VOUT ×98.5% VIN =2.5V, 1mA ≤ IOUT ≤ 30mA Typ 1.2 VOUT ×101.5% V 600 , —98.5% VIN =2.5V, 1mA ≤ IOUT ≤ 30mA Typ 1.5 VOUT ×101.5% V 600 mA Quiescent Current , VOUT ×98.5% 1.8 VOUT ×101.5% V IOUT(Max) (â³VOUT/VOUT) â³IOUT (â³VOUT/VOUT , —98.5% 2.5 VOUT ×101.5% V IOUT(Max) (â³VOUT/VOUT) â³IOUT (â³VOUT/VOUT) â³VIN Load , Output Voltage Conditions VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5
BCD Semiconductor
Original
GH11C AP2111
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TOâ'"92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO -5 V IC , dB Typical Characteristics A1015 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original

transistor A1015

Abstract: A1015 equivalent , 110-8534 JAPAN 11608PE TI IM TC-00001096 No. A1015-1/4 3HN04SS Continued from preceding page , No. A1015-2/4 3HN04SS RDS(on) - VGS 2.5 150mA ID=80mA 2.0 1.5 1.0 0.5 0 , 60 80 100 120 Ambient Temperature, Ta - °C 140 160 IT13200 No. A1015-3/4 , , 2008. Specifications and information herein are subject to change without notice. PS No. A1015-4/4
SANYO Electric
Original
transistor A1015 diagram A10154 A1015 yH SSFP package A10153 ENA1015 A1015-4/4
Abstract: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen and lead free TO-92 3.5±0.2 4.5±0.2 4.55±0.2 FEATURES (1.27 Typ.) Power Dissipation 1: Emitter 2: Collector 3: Base 14.3±0.2 1.25±0.2 1 2 3 2.54±0.1 â'¦0.07 0.43+0.08 0.46±0.1 ABSOLUTE MAXIMUM RATINGS at , . Page 1 of 2 A1015 Elektronische Bauelemente 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated SeCoS
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 MARKING: BA 1. BASE 2 , A1015 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original

A1015 BA

Abstract: A1015 sot-23 A1015 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS (TA=25 unless , Rank Range OF hFE L 130-200 H 200-400 A1015 SOT-23 Transistor(PNP) Typical
-
Original
ba marking sot-23 marking BA sot-23

A1015

Abstract: A1015GR A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank A1015-O A1015-Y A1015-GR Range 70~140 120~240 200~400 D A B C D E F G H J K K , not be informed individually. Page 1 of 2 A1015 Elektronische Bauelemente -0.15A , -50V
SeCoS
Original
A1015GR A1015Y transistor a1015y A1015-GR H A-1015gr A1015G

A1015

Abstract: A1015 Y Hanum TO-92 Piasti -Encapsulate Transistors A1015 TRANSISTOR (PNP) TO-92 W (Tamb=25°C ) A FEATURES Power dissipation PCM : 0,4 Collecto cu ent ICM â  -0.15 Collecto -base voltage V(brjcbo â'¢ -50 V Ope ating and storage junction temperature range Tj, Tsfg:-55'C to +150"C ELECTRICAL CHARACTERISTICS 1.emitter 2.COLLECTOR 3.BASE »CP 1 2 3 (T mb=25°C unless otherwise s pecified) Parameter Symbol Test , 70-140 120-240 200-400 http://www.harom.cn Typical Characteristics Hnnam A1015 -240 ic - vce < E uj tr CC
-
OCR Scan
Abstract: Incremental encoders Hollow or end shaft max. ø15 mm Resolution 5.2048 pulses GI341, GI342 - incretivo Features â'" Encoder with end or hollow shaft ø10-15 mm â'" Resolution max. 2048 ppr â'" Optical sensing â'" Flange and housing made of high-tech plastics â'" Tangential cable output , Approval UL approval / E63076 GI341 Shaft ø10.15 mm end shaft Starting torque ≤0.015 Nm GI342 Shaft 1 ø10.15 mm hollow shaft Starting torque ≤0.05 Nm Baumer
Original
RS422

RX2C ATS302R

Abstract: 27.145Mhz forward left 332 560 MOTO R 2.2K 103 VDD A1015 8550 8050 8550 104 8050 1K RIG HT 470p A1015 LEFT AND RIGHT MOTOR LEFT 2.2K 1K 104 2.2M 2.2M 150 , 3 4 1 2 A1015 Fosc=128KHz VDD RIG HT BACKWARD FORWARD 1.00 180K RX7 ATS307R -8- 8050 8550 104 8050 FORWARD AND BAC KWARD MOTOR Power A1015
Actions Semiconductor
Original
IN5817 RX2C ATS302R 27.145Mhz forward left 8050 8550 ATS302T TX2C ATS302T 128KHz ATS307T/RX7 ATS307RCMOS ATS307TRX7 ATS307T ATS307TSO ATS307RDC-DC

3182N

Abstract: 2sd4242 100uF 120K 4.7uF 2.2K 103 150 150 MOTOR 8550 104 2.2M 1K 104 A1015 8050 2.2K 8550 A1015 104 8050 1K 9 MOD RX2C ATS302R Fosc=128KHz LX 10 BACK , 302 6 5 4 3 2 1 MOTOR 8550 A1015 A1015 8050 104 8050 Power , A1015 8050 2.2K 8550 A1015 104 8050 1K 9 MOD RX2C ATS302R Fosc=128KHz LX 10 , 7 6 5 4 3 2 1 MOTOR 1K 8550 A1015 A1015 8050 104 8050
-
OCR Scan
3182N 2sd4242 b1375 1S1658 2482S 2sc 1091 2SC387A 2SC1815 2SC2347 2SC780A 2SC2101 2SC2181
Abstract: A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value , WEITRON http://www.weitron.com.tw 1/4 14-Feb-06 A1015 ELECTRICAL CHARACTERISTICS (TA=25 C , ://www.weitron.com.tw 2/4 14-Feb-06 A1015 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 14-Feb-06 A1015 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G Integrated Silicon Solution
Original
IS42S16400B 64-MBIT IS42S16400B-6T IS42S16400B-7T IS42S16400B-10T IS42S16400B-7TI
Abstract: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: Excellent hFE Linearity Complementary to C1815 Chip Appearance Chip Size 350um×350um Chip Thickness 210±20um Base 110um×110um Emitter Bonding Pad Size 100um×100um Front Metal Al Backside Metal Au(As) Scribe line width 40um Wafer Size 6 inch Electrical Characteristics Synqor
Original
3000V
Abstract: ) 1 3 *1 1 *2 2 *2 NEP VR=10 V (W/Hz1/2) 6.5 ×10-15 8.7 ×10-15 *1 6.5 ×10-15 *2 3.6 ×10-15 Synqor
Original

TDA1015

Abstract: resistor 104 2.2M 2.2M A1015 1K VR Feedback 8050 8550 104 A1015 8050 1K , VO2 SI F2 NC DVDD 150 A1015 8550 8550 FORWARD RIGHT 12 M2N LEFT 11 , LEFT BACKWARD FORWARD 180K Fosc=128KHz Powe A1015 RX8 ATS308R (Without DC/DC module , 100uF ANOTHER SET OF MOTOR 120K + 4.7uF MOTOR 8550 A1015 1K 8050 104 8050 1K 470p M2N M2 2.2K A1015 8550 104 2.2M 2.2M 150 150 2.2K 103
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OCR Scan
7Z89096 7Z78637 7Z78636 7Z78634
Abstract: 'Œ G Dia ± .010 (0.3) â'Œ.765 â'Œ(19.4) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.140 â'Œ(29.0 , ) H Dia ± .010 (0.3) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.203 â'Œ(30.6) â'Œ1.265 â'Œ(32.1 , (0.3) â'Œ.765 â'Œ(19.4) â'Œ.890 â'Œ(22.6) â'Œ1.015 â'Œ(25.8) â'Œ1.140 â'Œ(29.0) â'Œ1.265 â'Œ(32.1 Synqor
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